公开(公告)号：US5266010A

公开(公告)日：1993-11-30

申请号：US997883

申请日：1992-12-29

申请人： Masayuki Tanaka ,  Isao Murota ,  Kazuhito Nakai ,  Makoto Iga

发明人： Masayuki Tanaka ,  Isao Murota ,  Kazuhito Nakai ,  Makoto Iga

IPC分类号： F02D29/00 ,  F02D29/04 ,  F04B49/06 ,  F04B49/10 ,  F15B21/00 ,  F15B21/04 ,  F04B47/06

CPC分类号： F15B21/045 ,  F02D29/04 ,  F04B49/065 ,  F04B49/10 ,  F04B2207/03

摘要： A method for controlling a hydraulic pump included by an apparatus, comprises the steps of: measuring a circumferential atmospheric temperature of the apparatus, comparing the measured circumferential atmospheric temperature with a first temperature to judge as to whether the measured circumferential atmospheric temperature is higher than the first temperature or not, and decreasing an output of the hydraulic pump when the measured circumferential atmospheric temperature is judged to be higher than the first temperature.

公开(公告)号：US4856781A

公开(公告)日：1989-08-15

申请号：US945617

申请日：1986-12-23

申请人： Hideomi Shishido ,  Shigeo Doi ,  Hideki Sumida ,  Masayuki Tanaka

发明人： Hideomi Shishido ,  Shigeo Doi ,  Hideki Sumida ,  Masayuki Tanaka

IPC分类号： A63B41/08 ,  A63B41/00

CPC分类号： A63B41/08 ,  A63B2243/0025 ,  A63B2243/0095

摘要： A ball for ball game comprises a rubber hollow spherical bladder, a valve holder fixed to the tube for charging air into the tube, a valve member attached to the valve holder; a fabric layer covering the bladder surface and a leather layer. The fabric layer is composed of a plurality of equilateral quadrilateral pieces sewn together to form a sphere. The equilateral quadrilateral pieces each include two sheets of approximately trapezodial fabric pieces that are sewed together symmetrically at a central seam line. The equilateral quadrilaterla pieces are sewed together such that central seam lines of adjacent equilateral quadrilateral pieces fall at right angles to ech other. The fabric layer gives sphericity, dimensional stability and durability to the ball. The leather layer is adhered to the fabric layer directly or through a rubber based thin intermediate layer. On a circumferential line in the fabric layer which includes one seam line, at least one other seam line exists at a prescribed interval to equally divide the un-sewn portions. All segments on the spherical surface of the fabric layer, which are divided by a plurality of circumferential lines including all of the seam lines, have the same shape.

摘要翻译： 用于球赛的球包括橡胶空心球形球囊，固定到管上以将空气充入管中的阀座，连接到阀座的阀构件; 覆盖膀胱表面的织物层和皮革层。 织物层由缝合在一起形成球体的多个等边四边形片组成。 等边四边形件各自包括两张约中间缝线对称地缝合的大致梯形织物片。 等边四边形片缝合在一起，使得相邻等边四边形片的中心接缝线与其他方向成直角。 织物层赋予球的球形度，尺寸稳定性和耐久性。 皮革层直接或通过基于橡胶的中间层粘附到织物层。 在包括一条接缝线的织物层的周向线上，以规定的间隔存在至少一条另外的接缝线，以均匀分割未缝制的部分。 由包括所有接缝线的多个圆周线划分的织物层的球形表面上的所有部分具有相同的形状。

公开(公告)号：US4767528A

公开(公告)日：1988-08-30

申请号：US112045

申请日：1987-10-23

申请人： Toshihiko Sasaki ,  Keisuke Namba ,  Naotoshi Matsunaga ,  Masayuki Tanaka ,  Norimitsu Ezaki ,  Masaru Tanaka ,  Hisashi Tonegawa ,  Naomichi Mikajiri ,  Hideo Motooka ,  Toshikazu Honda

发明人： Toshihiko Sasaki ,  Keisuke Namba ,  Naotoshi Matsunaga ,  Masayuki Tanaka ,  Norimitsu Ezaki ,  Masaru Tanaka ,  Hisashi Tonegawa ,  Naomichi Mikajiri ,  Hideo Motooka ,  Toshikazu Honda

IPC分类号： C02F1/78

CPC分类号： C02F1/78

摘要： A drinking water purifying apparatus for purifying water from a water service comprises an ozone generating means for producing ozonized gas, an ozone reaction means for reacting the ozonized gas from the ozone generating means with the water from a water service, and a treating means for treating the water obtained by reaction to the ozonized gas in the ozone reaction means, whereby drinking water being free from organic compounds and smelling substances and having good taste can be obtained.

摘要翻译： 一种用于从水服务中净化水的饮用水净化装置，包括臭氧发生装置，用于生产臭氧化气体;臭氧反应装置，用于使来自臭氧发生装置的臭氧化气体与来自水服务的水反应;以及处理装置， 通过在臭氧反应装置中与臭氧化气体反应获得的水，由此可以获得不含有机化合物和嗅觉物质并具有良好味道的饮用水。

公开(公告)号：US4735519A

公开(公告)日：1988-04-05

申请号：US861890

申请日：1986-05-12

申请人： Masayuki Tanaka

发明人： Masayuki Tanaka

IPC分类号： B41J31/00 ,  B41J33/42 ,  B41J35/18 ,  B41J33/10

CPC分类号： B41J33/42 ,  B41J35/18

摘要： A color ink ribbon in which one half of the width of the ribbon is utilized for the left-to-right (first) printing direction and the other half of the width is utilized for the right-to-left (second) printing direction, and in which the sequence of ink layers composed of at least three colors is the same for both printing directions, whereby the ribbon can be used for printing in both the forward and reverse directions without wasteful non-utilization of areas in either half of the ribbon.

摘要翻译： 用于左右（第一）打印方向的色带的宽度的一半的宽度的宽度的另一半用于从右到左（第二）打印方向的彩色墨带， 并且其中由至少三种颜色组成的油墨层序列对于两个打印方向都是相同的，由此可以使带状物在前后方向上进行打印，而不浪费任何一方的带状区域的不利用 。

公开(公告)号：US4604081A

公开(公告)日：1986-08-05

申请号：US657739

申请日：1984-10-04

申请人： Satoshi Mashimo ,  Masayuki Tanaka ,  Yoshio Yamaguchi ,  Takashi Kinoshita

发明人： Satoshi Mashimo ,  Masayuki Tanaka ,  Yoshio Yamaguchi ,  Takashi Kinoshita

IPC分类号： F16G1/28

CPC分类号： F16G1/28

摘要： A toothed belt having a fabric adhered to the toothed portion of the belt formed of synthetic resin yarns having an ultimate viscosity of greater than approximately 1.30. In the illustrated embodiment, the yarns extending in the longitudinal direction of the belt are fully processed yarns. The cloth is preferably a woven cloth wherein one or the other of the weft and warp are wooly processed. The use of the disclosed cloth provides a substantial improvement in resistance of the belt to cracking and shearing of the teeth in use.

摘要翻译： 具有粘合到由具有大于约1.30的最终粘度的合成树脂纱线形成的带的齿形部分的织物的齿形带。 在所示实施例中，沿着带的纵向方向延伸的纱线是完全加工的纱线。 布优选是其中纬纱和经纱中的一个或另一个被毛加工的织布。 所公开的布的使用提供了使用中的带对开裂和剪切的带的阻力的显着改进。

公开(公告)号：US09355846B2

公开(公告)日：2016-05-31

申请号：US13597337

申请日：2012-08-29

申请人： Masayuki Tanaka ,  Kenichiro Toratani ,  Kazuhiro Matsuo

发明人： Masayuki Tanaka ,  Kenichiro Toratani ,  Kazuhiro Matsuo

IPC分类号： H01L21/02 ,  H01L23/498 ,  H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals; forming, on the first underlayer film, a second underlayer film that contains a second chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals, the second chemical element being an chemical element not contained in the first underlayer film; and forming, on the second underlayer film, a silicon oxide film by a CVD or ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group, and an amino group, or a silicon source of a siloxane system.

摘要翻译： 根据一个实施例，一种形成半导体器件的方法包括：形成第一下层膜，其含有选自锗，铝，钨，铪，钛，钽，镍，钴和碱土金属的第一化学元素 ; 在第一下层膜上形成含有选自锗，铝，钨，铪，钛，钽，镍，钴和碱土金属的第二化学元素的第二下层膜，第二化学元素为 第一底层膜中不含有化学元素; 以及通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或通过CVD或ALD方法在硅的第二下层膜上形成氧化硅膜的硅或硅 硅氧烷体系的来源。

公开(公告)号：US09294654B2

公开(公告)日：2016-03-22

申请号：US12446760

申请日：2007-09-26

申请人： Masayuki Tanaka ,  Masatoshi Okutomi

发明人： Masayuki Tanaka ,  Masatoshi Okutomi

IPC分类号： G06K9/32 ,  H04N1/387 ,  G06T1/00 ,  G06T3/40

CPC分类号： H04N1/3871 ,  G06T1/0007 ,  G06T3/4069

摘要： The present invention provides a high-resolution image generation method which is capable of generating a high-resolution image from multiple low-resolution images having displacements without using an iterative computation.A high-resolution image generation method for generating a high-resolution image from multiple low-resolution images having displacements, comprises a first step of performing a registration processing of multiple low-resolution images; a second step of generating an average image having the undefined pixels and a weighted image based on the displacement information obtained by the registration processing and multiple low-resolution images; and a third step of generating the high-resolution image by estimating pixel values of the undefined pixels included in the average image.

摘要翻译： 本发明提供一种高分辨率图像生成方法，其能够从具有位移的多个低分辨率图像生成高分辨率图像，而不使用迭代计算。 一种用于从具有位移的多个低分辨率图像生成高分辨率图像的高分辨率图像生成方法，包括执行多个低分辨率图像的注册处理的第一步骤; 基于通过登记处理和多个低分辨率图像获得的位移信息，生成具有未定义像素的平均图像和加权图像的第二步骤; 以及第三步骤，通过估计包括在平均图像中的未定义像素的像素值来产生高分辨率图像。

公开(公告)号：US09117665B2

公开(公告)日：2015-08-25

申请号：US13601266

申请日：2012-08-31

申请人： Masayuki Tanaka

发明人： Masayuki Tanaka

IPC分类号： H01L29/792 ,  H01L21/02 ,  H01L21/28 ,  H01L27/115

CPC分类号： H01L21/02329 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/792

摘要： In accordance with an embodiment, a nonvolatile semiconductor memory device includes a substrate including a semiconductor layer including an active region, a first insulating film on the active region, a charge storage layer on the first insulating film, an element isolation insulating film defining the active region, a second insulating film, and a control electrode on the second insulating film. The top surface of the element isolation insulating film is placed at a height between the top surface and the bottom surface of the charge storage layer, thereby forming a step constituted of the charge storage layer and the element isolation insulating film. The second insulating film covers the step and the charge storage layer. The second insulating film includes a first silicon oxide film and a first silicon nitride film on the first silicon oxide film. Nitrogen concentration in the first silicon nitride film is non-uniform.

摘要翻译： 根据一个实施例，一种非易失性半导体存储器件包括：衬底，该衬底包括具有有源区的半导体层，有源区上的第一绝缘膜，第一绝缘膜上的电荷存储层，限定有源区的元件隔离绝缘膜 区域，第二绝缘膜和第二绝缘膜上的控制电极。 元件隔离绝缘膜的上表面被放置在电荷存储层的顶表面和底表面之间的高度处，从而形成由电荷存储层和元件隔离绝缘膜构成的步骤。 第二绝缘膜覆盖步骤和电荷存储层。 第二绝缘膜包括在第一氧化硅膜上的第一氧化硅膜和第一氮化硅膜。 第一氮化硅膜中的氮浓度不均匀。

公开(公告)号：US08952445B2

公开(公告)日：2015-02-10

申请号：US13601372

申请日：2012-08-31

申请人： Masayuki Tanaka ,  Kazuhiro Matsuo

发明人： Masayuki Tanaka ,  Kazuhiro Matsuo

IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L27/115

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L27/11521

摘要： According to one embodiment, a nonvolatile semiconductor memory device has a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage film formed on the first insulating film, a second insulating film formed on the charge storage film, and a control electrode formed on the second insulating film. In the nonvolatile semiconductor memory device, the second insulating film has a laminated structure that has a first silicon oxide film, a first silicon nitride film, and a second silicon oxide film, a first atom is provided at an interface between the first silicon oxide film and the first silicon nitride film, and/or at an interface between the second silicon oxide film and the first silicon nitride film, and the first atom is selected from the group consisting of aluminum, boron, and alkaline earth metals.

摘要翻译： 根据一个实施例，非易失性半导体存储器件具有半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储膜，形成在电荷存储膜上的第二绝缘膜，以及控制 电极形成在第二绝缘膜上。 在非易失性半导体存储器件中，第二绝缘膜具有层叠结构，该叠层结构具有第一氧化硅膜，第一氮化硅膜和第二氧化硅膜，第一原子设置在第一氧化硅膜 和/或在第二氧化硅膜和第一氮化硅膜之间的界面处，并且第一原子选自铝，硼和碱土金属。

公开(公告)号：US08941168B2

公开(公告)日：2015-01-27

申请号：US13423633

申请日：2012-03-19

申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

IPC分类号： H01L29/788 ,  H01L29/423 ,  H01L21/28 ,  H01L27/115 ,  H01L29/66 ,  H01L21/762

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/76232 ,  H01L27/11521 ,  H01L29/66825 ,  H01L29/7881

摘要： A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film is formed in a first region above an upper surface of the element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a stack of a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film. A control electrode layer is formed above the interelectrode insulating film. The second silicon oxide film is thinner in the first region than in the third region.

摘要翻译： 半导体器件包括其中具有元件隔离绝缘膜的元件隔离区域; 由元件隔离区域划定的活动区域; 形成在活性区域中的玛瑙绝缘膜; 栅极绝缘膜上方的电荷存储层; 和电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。 电极间绝缘膜包括第一氧化硅膜，第一氮化硅膜，第二氧化硅膜和第二氮化硅膜的堆叠。 在电极间绝缘膜的上方形成控制电极层。 第二氧化硅膜在第一区域比在第三区域薄。