Abstract:
An apparatus and method for reading out data recoded on a tape with a read head is provided. A command processing unit receives a request for reading out old data behind EOD of new data. A channel input/output unit receives, data read out with a read head and a buffer managing unit receives this data. A header information determining unit determines whether this data includes header information of the old data. If it is determined that this data includes the header information of the old data, a data set determining unit determines whether a data set is extractable from this data. If it is determined that data set is not extractable, a move signal output unit outputs a signal for moving the read head in a direction of the new data.
Abstract:
Original images, large images, medium images and thumbnail images are registered with a server system. An original-image file is transmitted from a client computer to the server system. The server system converts the format of the original-image file to generate a large-image file, generates a medium-image file, in which the quantity of data is less than that of the large-image file, from the large-image file, and generates a thumbnail-image file, in which the quantity of data is less than that of the medium-image file, from the medium-image file. The original-image file, large-image file, medium-image file and thumbnail-image file are placed on one folder and stored in an image file unit. After the folder containing the original-image file, etc., has been stored in the image file unit, the user of a client computer having access privileges is capable of accessing files such as the large-image file.
Abstract:
A semiconductor device has, on a single substrate, a semiconductor circuit portion and a hollow capacitor portion including a pair of counter electrodes and a hollow part located between the counter electrodes. The hollow part of the hollow capacitor portion is surrounded by an insulating film, and a through hole is formed in the insulating film to communicate with the hollow part. The top surface of the insulating film covering the hollow part is planarized. Part of the insulating film located to the lateral sides of the hollow part supports the other part thereof located on the hollow part and upper one of the counter electrodes.
Abstract:
Stored in a database are a general-purpose table which contains, on a field-by-field basis, element data corresponding to the fields, an item-mane definition table which stipulates, filed by field an item name for being made to correspond with a database search-item name, and a page definition table storing display-item data for designating the name of an item to be displayed on a display unit. A search item capable of being displayed on a search page is changed by changing the name of the search item in the item-name definition table. The order in which search items are displayed on the search page is changed by changing the order of arrangement of the page definition table. Thus, items which are displayed on the search page of a database are changed.
Abstract:
The present invention offers a variable resistance device and a semiconductor apparatus that have component parts less subject to damage and thereby ensure stable quality at a high yield, even if the manufacturing processes include operations in a deoxidizing atmosphere or an oxidizing atmosphere. The variable resistance device of the present invention comprises: a variable resistance layer made of a metal oxide and causing changes in electric resistance thereof in accordance with control conditions; and a hydrogen-diffusion preventing layer which surrounds at least part of the variable resistance layer and prevents hydrogen from diffusing into the variable resistance layer.
Abstract:
An apparatus for baking a semiconductor wafer having a resist pattern thereon includes a baking oven in which the semiconductor wafer is placed and heated, and a first hot plate which is provided in the baking oven to heat an entire bottom surface of the semiconductor wafer. The apparatus also includes a gas supply unit having a gas introducing path, through which the purge gas is introduced into the baking oven, and a gas exhaust path, through which the purge gas is exhausted out of the baking oven. A gas temperature controller controls a temperature of the purge gas in order that the purge gas flowing around a peripheral edge or outer portion of the wafer has a higher temperature than that around the center or inner portion of the wafer.
Abstract:
The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12 or (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0≦x≦2, 0
Abstract:
The present invention relates to a method for imparting hydrophilicity to a substrate whereby high hydrophilic properties and water-holding properties can be maintained for a long period of time. According to the present invention, an SiO2 film is formed directly or through an undercoat layer on a substrate under a reduced pressure of 100 Pa or less and immediately after the SiO2 film is formed, the SiO2 film is treated with water. Before forming the SiO2 film, it is also desirable that an undercoat layer consisting of a TiO2 film, Al2O3 film, Nb2O5 film, a laminated film prepared by laminating the TiO2 film on the Al2O3 film, a laminated film prepared by laminating the TiO2 film on the Nb2O5 film, or a low emissivity film be formed on a substrate and the SiO2 film be then formed on the undercoat film to serve as an SiO2 composite film.
Abstract:
A semiconductor memory device, includes: a semiconductor substrate including a transistor; a first protective insulating film for covering the semiconductor substrate; at least one data storage capacitor element formed on the first protective insulating film; a second protective insulating film for covering the first protective insulating film and the capacitor element; a hydrogen barrier layer; and an interconnection layer for electrically connecting the transistor and the capacitor element, wherein: the capacitor element includes a lower electrode formed on the first protective insulating film, a capacitor film formed on the lower electrode, and an upper electrode formed on the capacitor film, the capacitor film includes an insulating metal oxide, the second protective insulating film has a first contact hole reaching the upper electrode and a second contact hole reaching the lower electrode, and the hydrogen barrier layer is provided in the first and second contact holes, so as not to expose the upper and the lower electrodes.
Abstract:
A method and apparatus are described which demodulate channel bits modulated by an arbitrary one of two modulation schemes, by making use of a consolidated reference table with a small address space. The method of the invention comprises the steps of: generating first output bits for representing patterns that correspond to patterns represented by first channel bits other than those patterns being unable to exist under first RLL constraints, the first output bits having a lesser number of bits than the first channel bits; and generating second output bits for representing patterns that correspond to patterns represented by second channel bits other than those patterns being unable to exist under second RLL constraints, the patterns represented by the second output bits being located at discontinuous areas of the patterns represented by the first output bits, the second output bits having a lesser number of bits than the second channel bits. The first and second output bits are used for designating an address of a demodulating reference table.