公开(公告)号：US20100014189A1

公开(公告)日：2010-01-21

申请号：US12470331

申请日：2009-05-21

Applicant: Setsuko Masuda ,  Kenji Nakamura ,  Yutaka Oishi ,  Keisuke Tanaka

Inventor： Setsuko Masuda ,  Kenji Nakamura ,  Yutaka Oishi ,  Keisuke Tanaka

IPC: G11B5/584

CPC classification number: G11B5/584

Abstract: An apparatus and method for reading out data recoded on a tape with a read head is provided. A command processing unit receives a request for reading out old data behind EOD of new data. A channel input/output unit receives, data read out with a read head and a buffer managing unit receives this data. A header information determining unit determines whether this data includes header information of the old data. If it is determined that this data includes the header information of the old data, a data set determining unit determines whether a data set is extractable from this data. If it is determined that data set is not extractable, a move signal output unit outputs a signal for moving the read head in a direction of the new data.

Abstract translation: 提供一种用于读出在具有读取头的磁带上重新编码的数据的装置和方法。 命令处理单元接收新数据EOD背面读出旧数据的请求。 通道输入/输出单元接收用读取头读出的数据和缓冲器管理单元接收该数据。 标题信息确定单元确定该数据是否包括旧数据的标题信息。 如果确定该数据包括旧数据的标题信息，则数据集确定单元确定数据集是否可从该数据中提取。 如果确定数据集不可提取，则移动信号输出单元输出用于在新数据的方向上移动读取头的信号。

公开(公告)号：US07408668B2

公开(公告)日：2008-08-05

申请号：US10992090

申请日：2004-11-19

Applicant: Norihisa Haneda ,  Yoshinori Ohta ,  Keisuke Tanaka

Inventor： Norihisa Haneda ,  Yoshinori Ohta ,  Keisuke Tanaka

IPC: H04N1/21 ,  G06F17/30

CPC classification number: G06F17/30569 ,  G06F17/3028 ,  Y10S707/99945 ,  Y10S707/99948

Abstract: Original images, large images, medium images and thumbnail images are registered with a server system. An original-image file is transmitted from a client computer to the server system. The server system converts the format of the original-image file to generate a large-image file, generates a medium-image file, in which the quantity of data is less than that of the large-image file, from the large-image file, and generates a thumbnail-image file, in which the quantity of data is less than that of the medium-image file, from the medium-image file. The original-image file, large-image file, medium-image file and thumbnail-image file are placed on one folder and stored in an image file unit. After the folder containing the original-image file, etc., has been stored in the image file unit, the user of a client computer having access privileges is capable of accessing files such as the large-image file.

Abstract translation: 原始图像，大图像，中等图像和缩略图在服务器系统中注册。 原始图像文件从客户端计算机发送到服务器系统。 服务器系统将原始图像文件的格式转换为生成大图像文件，从大图像文件生成数据量少于大图像文件的中图像文件 并且从中图像文件生成数据量少于中图像文件的缩略图文件。 原始图像文件，大图像文件，中图像文件和缩略图文件放置在一个文件夹中，并存储在图像文件单元中。 在包含原始图像文件等的文件夹已经存储在图像文件单元中之后，具有访问权限的客户端计算机的用户能够访问诸如大图像文件的文件。

公开(公告)号：US20070128758A1

公开(公告)日：2007-06-07

申请号：US11605292

申请日：2006-11-29

Applicant: Keisuke Tanaka ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

Inventor： Keisuke Tanaka ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC: H01L21/00 ,  H01L29/82

CPC classification number: B06B1/0292 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/78

Abstract: A semiconductor device has, on a single substrate, a semiconductor circuit portion and a hollow capacitor portion including a pair of counter electrodes and a hollow part located between the counter electrodes. The hollow part of the hollow capacitor portion is surrounded by an insulating film, and a through hole is formed in the insulating film to communicate with the hollow part. The top surface of the insulating film covering the hollow part is planarized. Part of the insulating film located to the lateral sides of the hollow part supports the other part thereof located on the hollow part and upper one of the counter electrodes.

Abstract translation: 半导体器件在单个衬底上具有包括一对对电极和位于对置电极之间的中空部分的半导体电路部分和中空电容器部分。 中空电容器部分的中空部分被绝缘膜包围，并且在绝缘膜中形成通孔以与中空部分连通。 覆盖中空部分的绝缘膜的顶表面被平坦化。 位于中空部分的侧面的绝缘膜的一部分支撑位于中空部分上的另一部分和对置电极的上部之一。

公开(公告)号：US07036074B1

公开(公告)日：2006-04-25

申请号：US09534309

申请日：2000-03-23

Applicant: Yoshinori Ohta ,  Keisuke Tanaka

Inventor： Yoshinori Ohta ,  Keisuke Tanaka

IPC: G06F17/18 ,  G06F17/30

CPC classification number: G06F17/30554 ,  G06F17/30398 ,  Y10S707/99933 ,  Y10S707/99943

Abstract: Stored in a database are a general-purpose table which contains, on a field-by-field basis, element data corresponding to the fields, an item-mane definition table which stipulates, filed by field an item name for being made to correspond with a database search-item name, and a page definition table storing display-item data for designating the name of an item to be displayed on a display unit. A search item capable of being displayed on a search page is changed by changing the name of the search item in the item-name definition table. The order in which search items are displayed on the search page is changed by changing the order of arrangement of the page definition table. Thus, items which are displayed on the search page of a database are changed.

Abstract translation: 存储在数据库中的通用表是通用表，其逐字段地包含对应于字段的元素数据，其中规定了通过字段提交的项目名称定义表，以使其对应于项目名称 数据库搜索项名称和存储用于指定要在显示单元上显示的项目的名称的显示项目数据的页面定义表。 通过改变项目名称定义表中的搜索项目的名称来改变能够在搜索页面上显示的搜索项目。 通过改变页面定义表的排列顺序来改变在搜索页面上显示搜索项目的顺序。 因此，在数据库的搜索页面上显示的项目被改变。

公开(公告)号：US20060081961A1

公开(公告)日：2006-04-20

申请号：US11231744

申请日：2005-09-22

Applicant: Keisuke Tanaka ,  Yoshihisa Kato ,  Zhiqiang Wei

Inventor： Keisuke Tanaka ,  Yoshihisa Kato ,  Zhiqiang Wei

IPC: H01L29/00

CPC classification number: H01L45/04 ,  H01L27/112 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/12 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

Abstract: The present invention offers a variable resistance device and a semiconductor apparatus that have component parts less subject to damage and thereby ensure stable quality at a high yield, even if the manufacturing processes include operations in a deoxidizing atmosphere or an oxidizing atmosphere. The variable resistance device of the present invention comprises: a variable resistance layer made of a metal oxide and causing changes in electric resistance thereof in accordance with control conditions; and a hydrogen-diffusion preventing layer which surrounds at least part of the variable resistance layer and prevents hydrogen from diffusing into the variable resistance layer.

Abstract translation: 本发明提供一种可变电阻器件和半导体器件，其具有较少受损的部件，从而以高产率确保稳定的质量，即使制造工艺包括在脱氧气氛或氧化气氛中的操作。 本发明的可变电阻器件包括：由金属氧化物制成的可变电阻层，并根据控制条件引起其电阻变化; 以及包围可变电阻层的至少一部分并防止氢扩散到可变电阻层中的氢扩散防止层。

公开(公告)号：US06838643B2

公开(公告)日：2005-01-04

申请号：US10197598

申请日：2002-07-18

Applicant: Shouzou Kobayashi ,  Takamitsu Furukawa ,  Keisuke Tanaka ,  Kouhei Shimoyama ,  Akira Watanabe ,  Tadashi Nishimuro ,  Koki Muto ,  Azusa Yanagisawa ,  Katsuo Oshima

Inventor： Shouzou Kobayashi ,  Takamitsu Furukawa ,  Keisuke Tanaka ,  Kouhei Shimoyama ,  Akira Watanabe ,  Tadashi Nishimuro ,  Koki Muto ,  Azusa Yanagisawa ,  Katsuo Oshima

IPC: G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  H05B3/00 ,  F27B5/14

CPC classification number: H01L21/67248 ,  H01L21/67109

Abstract: An apparatus for baking a semiconductor wafer having a resist pattern thereon includes a baking oven in which the semiconductor wafer is placed and heated, and a first hot plate which is provided in the baking oven to heat an entire bottom surface of the semiconductor wafer. The apparatus also includes a gas supply unit having a gas introducing path, through which the purge gas is introduced into the baking oven, and a gas exhaust path, through which the purge gas is exhausted out of the baking oven. A gas temperature controller controls a temperature of the purge gas in order that the purge gas flowing around a peripheral edge or outer portion of the wafer has a higher temperature than that around the center or inner portion of the wafer.

公开(公告)号：US06734456B2

公开(公告)日：2004-05-11

申请号：US10287824

申请日：2002-11-05

Applicant: Keisuke Tanaka ,  Toru Nasu ,  Masamichi Azuma

Inventor： Keisuke Tanaka ,  Toru Nasu ,  Masamichi Azuma

IPC: H01L2976

CPC classification number: H01L21/02197 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/75

Abstract: The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12 or (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0≦x≦2, 0

Abstract translation: 本发明的铁电体膜由通式Bi4-x + yAxTi3O12或（Bi4-x + yAxTi3O12）z +（DBi2E2O9）1-z表示的铁电材料制成，其中A为选自 La，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu和V; D是选自Sr，Ba，Ca，Bi，Cd，Pb和La的元素; E是选自Ti，Ta，Hf，W，Nb，Zr和Cr的元素; 0 <= x <= 2,0

公开(公告)号：US06667075B2

公开(公告)日：2003-12-23

申请号：US10110642

申请日：2002-04-12

Applicant: Toshiaki Kitazoe ,  Keisuke Tanaka ,  Kenji Murata

Inventor： Toshiaki Kitazoe ,  Keisuke Tanaka ,  Kenji Murata

IPC: B05D310

CPC classification number: G02B1/18 ,  C03C17/245 ,  C03C17/3417 ,  C03C2217/213 ,  C03C2218/151 ,  C03C2218/152 ,  C03C2218/32 ,  C23C14/10 ,  C23C14/5853 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/56 ,  G02B1/10

Abstract: The present invention relates to a method for imparting hydrophilicity to a substrate whereby high hydrophilic properties and water-holding properties can be maintained for a long period of time. According to the present invention, an SiO2 film is formed directly or through an undercoat layer on a substrate under a reduced pressure of 100 Pa or less and immediately after the SiO2 film is formed, the SiO2 film is treated with water. Before forming the SiO2 film, it is also desirable that an undercoat layer consisting of a TiO2 film, Al2O3 film, Nb2O5 film, a laminated film prepared by laminating the TiO2 film on the Al2O3 film, a laminated film prepared by laminating the TiO2 film on the Nb2O5 film, or a low emissivity film be formed on a substrate and the SiO2 film be then formed on the undercoat film to serve as an SiO2 composite film.

公开(公告)号：US06528365B2

公开(公告)日：2003-03-04

申请号：US09974510

申请日：2001-10-10

Applicant: Yoshihisa Nagano ,  Keisuke Tanaka ,  Toru Nasu

Inventor： Yoshihisa Nagano ,  Keisuke Tanaka ,  Toru Nasu

IPC: H01L218242

CPC classification number: H01L27/11502 ,  H01L21/76895 ,  H01L27/11507 ,  H01L28/40

Abstract: A semiconductor memory device, includes: a semiconductor substrate including a transistor; a first protective insulating film for covering the semiconductor substrate; at least one data storage capacitor element formed on the first protective insulating film; a second protective insulating film for covering the first protective insulating film and the capacitor element; a hydrogen barrier layer; and an interconnection layer for electrically connecting the transistor and the capacitor element, wherein: the capacitor element includes a lower electrode formed on the first protective insulating film, a capacitor film formed on the lower electrode, and an upper electrode formed on the capacitor film, the capacitor film includes an insulating metal oxide, the second protective insulating film has a first contact hole reaching the upper electrode and a second contact hole reaching the lower electrode, and the hydrogen barrier layer is provided in the first and second contact holes, so as not to expose the upper and the lower electrodes.

公开(公告)号：US06370098B2

公开(公告)日：2002-04-09

申请号：US09791174

申请日：2001-02-21

Applicant: Takenori Okada ,  Keisuke Tanaka ,  Teruhiko Ushio

Inventor： Takenori Okada ,  Keisuke Tanaka ,  Teruhiko Ushio

IPC: G11B700

CPC classification number: H03M7/46 ,  G11B20/1426 ,  G11B2020/1461

Abstract: A method and apparatus are described which demodulate channel bits modulated by an arbitrary one of two modulation schemes, by making use of a consolidated reference table with a small address space. The method of the invention comprises the steps of: generating first output bits for representing patterns that correspond to patterns represented by first channel bits other than those patterns being unable to exist under first RLL constraints, the first output bits having a lesser number of bits than the first channel bits; and generating second output bits for representing patterns that correspond to patterns represented by second channel bits other than those patterns being unable to exist under second RLL constraints, the patterns represented by the second output bits being located at discontinuous areas of the patterns represented by the first output bits, the second output bits having a lesser number of bits than the second channel bits. The first and second output bits are used for designating an address of a demodulating reference table.

Abstract translation: 描述了通过使用具有小的地址空间的统一的参考表来解调由两个调制方案中的任意一个调制的信道位的方法和装置。 本发明的方法包括以下步骤：产生第一输出比特，用于表示对应于第一信道比特以外的模式所代表的模式，除了在第一RLL约束下不能存在的那些模式，第一输出比特的比特数少于 第一个通道位; 以及产生第二输出位，用于表示对应于除了在第二RLL约束下不能存在的那些模式以外的第二通道位表示的模式的模式，由第二输出位表示的模式位于由第一RLL表示的模式的不连续区域 输出位，第二输出位具有比第二通道位少的位数。 第一和第二输出位用于指定解调参考表的地址。