Semiconductor memory device
    51.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号:US06288963B1

    公开(公告)日:2001-09-11

    申请号:US09593013

    申请日:2000-06-13

    申请人: Yoshiharu Kato

    发明人: Yoshiharu Kato

    IPC分类号: G11C700

    CPC分类号: G11C7/1045 G11C11/406

    摘要: A variation in substrate voltage VBB caused by a reduction of power supply voltage VDD when an operation mode is shifted to a data retention mode is detected, and a cycle of refresh operation during this varying period is shortened or a plurality of memory cells are refreshed simultaneously, thereby enhancing the electric charge retention ability of the memory cells during this transient period. After the transient period is elapsed, the refresh cycle is returned to the original operating cycle, and the power consumption during the data retention mode can be effectively reduced.

    摘要翻译: 检测到当操作模式转移到数据保持模式时由电源电压VDD降低引起的衬底电压VBB的变化,并且在该变化周期期间刷新操作的周期被缩短或者同时刷新多个存储器单元 从而提高了该瞬态期间存储单元的电荷保持能力。 在过渡期间过后,刷新周期返回原来的运行周期,数据保持模式下的功耗可以有效降低。

    Current mirror amplifier circuit and method of driving the same
    53.
    发明授权
    Current mirror amplifier circuit and method of driving the same 失效
    电流反射放大器电路及其驱动方法

    公开(公告)号:US5200710A

    公开(公告)日:1993-04-06

    申请号:US749833

    申请日:1991-08-26

    申请人: Yoshiharu Kato

    发明人: Yoshiharu Kato

    CPC分类号: H03F3/72

    摘要: A current mirror amplifier circuit includes a differential amplifier circuit having first and second nodes for differentially amplifying a pair of complementary input signals in an activation mode. A current mirror circuit is coupled between a first power source and the first and second nodes of the differential amplifier circuit. A switching circuit is coupled between the differential amplifier circuit and a second power source which supplies a second voltage lower than a first voltage supplied by the first power source for switching a mode of the differential amplifier circuit from a standby mode to the activation mode in response to an activation signal. A circuit is coupled between the first power source and the first and second nodes of the differential amplifier circuit for pulling up potentials of the first and second nodes during the standby mode. This circuit is deactivated after the differential amplifier circuit is switched from the standby mode to the activation mode.

    Process for preparing powdered ceramic raw materials of complex oxide
    54.
    发明授权
    Process for preparing powdered ceramic raw materials of complex oxide 失效
    复合氧化物粉末陶瓷原料的制备方法

    公开(公告)号:US4820669A

    公开(公告)日:1989-04-11

    申请号:US856038

    申请日:1986-04-25

    摘要: A process for preparing a powdered ceramic raw material comprises the steps of(a) adding ammonia gas or an alkali to a first aqueous solution containing a water-soluble salt of lead capable of being precipitated as a hydroxide until the pH of the first solution reaches a value within the range of 9 to 10 to form a precipitate of lead hydroxide;(b) adding ammonia gas or alkali to a second aqueous solution containing at least one water-soluble salt or ceramic components other than lead capable of being precipitated as a hydroxide until the pH of the second solution reaches a value within the range of 9 to 10 to form a precipitate of hydroxide of said ceramic components;(c) mixing the resulting reaction mixtures, followed by separation of the precipitates of hydroxides from solution, washing with water and drying; and(d) calcining the precipitate to form complex oxides of said ceramic material.

    摘要翻译: 制备粉末状陶瓷原料的方法包括以下步骤:(a)将氨气或碱添加到含有能够以氢氧化物沉淀的铅的水溶性盐的第一水溶液中,直到第一溶液的pH达到 在9至10的范围内的值以形成氢氧化铅的沉淀物; (b)将氨气或碱加入含有至少一种水溶性盐或除了能够以氢氧化钠沉淀的铅的陶瓷成分的第二水溶液,直到第二溶液的pH达到9〜 以形成所述陶瓷组分的氢氧化物沉淀物; (c)混合得到的反应混合物,然后从溶液中分离氢氧化物沉淀物,用水洗涤并干燥; 和(d)煅烧沉淀物以形成所述陶瓷材料的复合氧化物。

    Apparatus for manufacturing a laminated unit of ceramic green sheets
    55.
    发明授权
    Apparatus for manufacturing a laminated unit of ceramic green sheets 失效
    陶瓷生片层叠单元的制造装置

    公开(公告)号:US4698192A

    公开(公告)日:1987-10-06

    申请号:US714381

    申请日:1985-03-21

    摘要: An apparatus for manufacturing a laminated unit of ceramic green sheets comprises an endless belt, and an applying apparatus provided at a predetermined position on the running path of the endless belt. The applying apparatus includes a reservoir for storing a ceramic slurry and a moveable blade. When the belt runs with the blade spaced a predetermined distance from the top surface of the endless belt, the ceramic slurry flows out through a gap between the blade and the belt and, thus, is applied on the belt to a predetermined thickness. The applied ceramic slurry is dried by a drier so as to form a ceramic green sheet. A conductive paste is printed on the top surface of the ceramic green sheet by a printing apparatus. The printed conductive paste is dried by a drier. The ceramic green sheet with the conductive paste printed thereon is brought again to the applying apparatus due to the movement of the endless belt, the blade of the applying apparatus is further displaced upward, and ceramic slurry is applied on the previously formed ceramic green sheet. By repeating such applied again on the ceramic green sheet. By repeating such a process, a laminated unit of the ceramic green sheets is obtained.

    摘要翻译: 一种用于制造陶瓷生片的层叠单元的装置包括环形带和设置在环形带的行进路径上的预定位置处的施加装置。 施加装置包括用于存储陶瓷浆料和可移动叶片的储存器。 当带子与环形带的顶表面隔开预定距离的叶片运行时,陶瓷浆料通过叶片和带之间的间隙流出,因此被施加到带上预定的厚度。 将所施加的陶瓷浆料通过干燥器干燥以形成陶瓷生片。 导电浆料通过印刷装置印刷在陶瓷生片的顶表面上。 印刷的导电浆料通过干燥器干燥。 由于环形带的移动,其上印有导电浆料的陶瓷生片被再次带到施加装置,施加装置的刀片进一步向上移动,并且将陶瓷浆料施加在预先形成的陶瓷生片上。 通过重复这种再次应用于陶瓷生片上。 通过重复这样的处理,得到陶瓷生片的层压单元。

    Filter
    56.
    发明授权
    Filter 失效
    过滤

    公开(公告)号:US4146481A

    公开(公告)日:1979-03-27

    申请号:US803983

    申请日:1977-06-06

    摘要: Disclosed herein is an improvement in a filter of the type having a plurality of filtering plates vertically spaced at fixed intervals to interpose filtering spaces therebetween and as many scrapers laid outwardly from the axis of the stack of filtering plates and inserted one each into the filtering spaces, i.e. between the adjacent filtering plates, the improvement which includes giving each filtering plate a perfectly circular periphery so as to avoid formation of any protuberance from the circumferences and, at the same time, disposing the scrapers so as to keep sliding contact with the adjacent filtering plates.

    摘要翻译: 本文公开了一种具有多个过滤板的过滤器的改进,所述过滤板以固定的间隔垂直间隔设置,以在其间插入过滤空间,并且将许多刮板从过滤板堆叠的轴线向外放置,并将每个过滤板插入过滤空间 即相邻的过滤板之间的改进,其包括给每个过滤板一个完美的圆形周边,以避免从周向形成任何突起,并且同时设置刮刀以便与相邻的过滤板保持滑动接触 滤板。

    SEMICONDUCTOR MEMORY DEVICE, REFRESH CONTROL METHOD THEREOF, AND TEST METHOD THEREOF
    58.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE, REFRESH CONTROL METHOD THEREOF, AND TEST METHOD THEREOF 有权
    半导体存储器件,其刷新控制方法及其测试方法

    公开(公告)号:US20100254208A1

    公开(公告)日:2010-10-07

    申请号:US12818956

    申请日:2010-06-18

    IPC分类号: G11C7/00

    摘要: The present invention provides a semiconductor memory device which reduces current consumption in a standby state owing to a suitable refresh-thinning-out function, and a refresh control method thereof. When the refresh-thinning-out function is added while a refresh operation and an external access operation are being executed independently of each other, a refresh address counter outputs a refresh address Add(C) and inputs predetermined high-order bits thereof to a refresh-thinning-out control as a high-order refresh address Add(C) (m), where judgment as to whether the refresh operation is performed, is made. A refresh permission signal RFEN corresponding to the result of judgment is inputted to a word driver to activate and control the word driver. The process of judgment by the refresh-thinning-out control circuit can be embedded in an access time of a row system.

    摘要翻译: 本发明提供一种由于适当的刷新稀疏功能而在待机状态下减少电流消耗的半导体存储器件及其刷新控制方法。 当刷新操作和外部访问操作彼此独立地执行时添加刷新稀疏功能时,刷新地址计数器输出刷新地址Add(C)并将预定的高位比特输入到刷新 - 作为高阶刷新地址的输出控制Add(C)(m),其中进行关于刷新操作的判断。 与判断结果相对应的刷新允许信号RFEN被输入到字驱动器以激活和控制字驱动器。 刷新稀疏控制电路的判断处理可嵌入行系统的访问时间。

    Semiconductor memory device, refresh control method thereof, and test method thereof
    59.
    发明授权
    Semiconductor memory device, refresh control method thereof, and test method thereof 失效
    半导体存储器件,其刷新控制方法及其测试方法

    公开(公告)号:US07764559B2

    公开(公告)日:2010-07-27

    申请号:US11715452

    申请日:2007-03-08

    IPC分类号: G11C7/00

    摘要: The present invention provides a semiconductor memory device which reduces current consumption in a standby state owing to a suitable refresh-thinning-out function, and a refresh control method thereof. When the refresh-thinning-out function is added while a refresh operation and an external access operation are being executed independently of each other, a refresh address counter outputs a refresh address Add(C) and inputs predetermined high-order bits thereof to a refresh-thinning-out control as a high-order refresh address Add(C) (m), where judgment as to whether the refresh operation is performed, is made. A refresh permission signal RFEN corresponding to the result of judgment is inputted to a word driver to activate and control the word driver. The process of judgment by the refresh-thinning-out control circuit can be embedded in an access time of a row system.

    摘要翻译: 本发明提供一种由于适当的刷新稀疏功能而在待机状态下减少电流消耗的半导体存储器件及其刷新控制方法。 当刷新操作和外部访问操作彼此独立地执行时添加刷新稀疏功能时,刷新地址计数器输出刷新地址Add(C)并将预定的高位比特输入到刷新 - 作为高阶刷新地址的输出控制Add(C)(m),其中进行关于刷新操作的判断。 与判断结果相对应的刷新允许信号RFEN被输入到字驱动器以激活和控制字驱动器。 刷新稀疏控制电路的判断处理可嵌入行系统的访问时间。

    Semiconductor device and method of testing the same
    60.
    发明授权
    Semiconductor device and method of testing the same 有权
    半导体器件及其测试方法

    公开(公告)号:US07562335B2

    公开(公告)日:2009-07-14

    申请号:US11583131

    申请日:2006-10-19

    申请人: Yoshiharu Kato

    发明人: Yoshiharu Kato

    IPC分类号: G06F17/50

    摘要: An object is to provide a semiconductor device in which it is possible to determine whether or not a minute delay time given by a delay circuit is within a specified value or not, and a method of testing the semiconductor device. In response to a data strobe signal TDQS for testing, the delay circuits DC0 and DC1 produce delay data strobe signals IDQS0 and IDQS1 delayed by delay times DT0 and DT1. Outputted as a reverse signal from the inverter INV0, is a reverse data strobe signal RIDQS0 in response to the delay data strobe signal IDQS0, and delayed by an allowable delay time IT. Inputted into the NAND gate ND0, are the reverse data strobe signal RIDQS0 and the delay data strobe signal IDQS1. When, in comparison with the phase of the delay data strobe signal IDQS0, the phase of the delay data strobe signal IDQS1 is delayed by the allowable delay time IT or more, a pulse signal PL0 is not outputted from the NAND gate ND0.

    摘要翻译: 目的是提供一种半导体器件,其中可以确定由延迟电路给出的微小延迟时间是否在规定值内,以及测试半导体器件的方法。 响应于用于测试的数据选通信号TDQS,延迟电路DC0和DC1产生延迟数据选通信号IDQS0和IDQS1延迟延迟时间DT0和DT1。 作为来自反相器INV0的反向信号输出,是响应于延迟数据选通信号IDQS0的反向数据选通信号RIDQS0,并延迟了允许的延迟时间IT。 输入到NAND门ND0中的是反向数据选通信号RIDQS0和延迟数据选通信号IDQS1。 当与延迟数据选通信号IDQS0的相位相比,延迟数据选通信号IDQS1的相位延迟可允许的延迟时间IT或更大时,不从NAND门ND0输出脉冲信号PL0。