公开(公告)号：US09117839B2

公开(公告)日：2015-08-25

申请号：US13465812

申请日：2012-05-07

申请人： Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour

发明人： Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour

IPC分类号： H01L29/15 ,  H01L29/66 ,  H01L29/808 ,  H01L29/20

CPC分类号： H01L29/66924 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/7832 ,  H01L29/8083

摘要： A vertical JFET includes a III-nitride substrate and a III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The first III-nitride epitaxial layer has a first dopant concentration. The vertical JFET also includes a III-nitride epitaxial structure coupled to the first III-nitride epitaxial layer. The III-nitride epitaxial structure includes a set of channels of the first conductivity type and having a second dopant concentration, a set of sources of the first conductivity type, having a third dopant concentration greater than the first dopant concentration, and each characterized by a contact surface, and a set of regrown gates interspersed between the set of channels. An upper surface of the set of regrown gates is substantially coplanar with the contact surfaces of the set of sources.

摘要翻译： 垂直JFET包括III族氮化物衬底和与III族氮化物衬底耦合的第一导电类型的III族氮化物外延层。 第一III族氮化物外延层具有第一掺杂剂浓度。 垂直JFET还包括耦合到第一III族氮化物外延层的III族氮化物外延结构。 III族氮化物外延结构包括一组第一导电类型的沟道并且具有第二掺杂剂浓度，第一导电类型的一组源，其具有大于第一掺杂剂浓度的第三掺杂剂浓度，并且各自的特征在于： 接触表面，以及一组重新生长的门，散布在通道组之间。 该组再生栅极的上表面与该组源的接触表面基本共面。

公开(公告)号：US08969994B2

公开(公告)日：2015-03-03

申请号：US13585121

申请日：2012-08-14

申请人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli

发明人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli

IPC分类号： H01L29/47 ,  H01L29/15 ,  H01L29/861 ,  H01L21/36

CPC分类号： H01L29/66143 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/872

摘要： An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.

摘要翻译： MPS二极管包括以第一导电类型和第一掺杂剂浓度为特征的III族氮化物衬底，其具有第一侧和第二侧。 MPS二极管还包括III族氮化物外延结构，其包括耦合到衬底的第一侧的第一III族氮化物外延层，其中第一III族氮化物外延层的区域包括突起阵列。 III族氮化物外延结构还包括多个第二导电类型的III族氮化物区域，每个部分设置在相邻的突起之间。 第二导电类型的多个III族氮化物区域中的每一个包括横向位于相邻突起之间的第一部分和沿着垂直于衬底的第一侧的方向延伸的第二部分。 MPS二极管还包括电耦合到一个或多个突起和一个或多个第二部分的第一金属结构。

公开(公告)号：US08778788B2

公开(公告)日：2014-07-15

申请号：US13270625

申请日：2011-10-11

申请人： Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L21/28

CPC分类号： H01L29/66143 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/2003 ,  H01L29/47 ,  H01L29/475 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region.

摘要翻译： 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括III族氮化物外延结构，其包括耦合到III族氮化物衬底的第一侧的第一III族氮化物外延层和多个第二导电类型的III族氮化物区域。 多个III族氮化物区域在多个III族氮化物区域中的每一个之间具有至少一个第一导电类型的III族氮化物外延区域。 半导体结构还包括电耦合到多个III族氮化物区域和至少一个III族氮化物外延区域中的一个或多个的第一金属结构。 在第一金属结构和至少一个III族氮化物外延区之间产生肖特基接触。

公开(公告)号：US20140048902A1

公开(公告)日：2014-02-20

申请号：US13585121

申请日：2012-08-14

申请人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edward ,  Hui Nie ,  Isik C. Kizilyalli

发明人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edward ,  Hui Nie ,  Isik C. Kizilyalli

IPC分类号： H01L21/329 ,  H01L29/872

CPC分类号： H01L29/66143 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/872

摘要： An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.

摘要翻译： MPS二极管包括以第一导电类型和第一掺杂剂浓度为特征的III族氮化物衬底，其具有第一侧和第二侧。 MPS二极管还包括III族氮化物外延结构，其包括耦合到衬底的第一侧的第一III族氮化物外延层，其中第一III族氮化物外延层的区域包括突起阵列。 III族氮化物外延结构还包括多个第二导电类型的III族氮化物区域，每个部分设置在相邻的突起之间。 第二导电类型的多个III族氮化物区域中的每一个包括横向位于相邻突起之间的第一部分和沿着垂直于衬底的第一侧的方向延伸的第二部分。 MPS二极管还包括电耦合到一个或多个突起和一个或多个第二部分的第一金属结构。

公开(公告)号：US08643134B2

公开(公告)日：2014-02-04

申请号：US13300028

申请日：2011-11-18

申请人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

发明人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

IPC分类号： H01L29/47

CPC分类号： H01L29/66143 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66212 ,  H01L29/872

摘要： A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.

摘要翻译： 一种制造III族氮化物半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的III族氮化物衬底，形成耦合到III族氮化物衬底的第一表面的III族氮化物外延层，以及 去除所述III族氮化物外延层的至少一部分以形成第一暴露表面。 该方法还包括形成耦合到第一暴露表面的电介质层，去除电介质层的至少一部分，以及形成耦合到电介质层的剩余部分的金属层，使得电介质层的剩余部分被布置 在III族氮化物外延层和金属层之间。

公开(公告)号：US20130164893A1

公开(公告)日：2013-06-27

申请号：US13335355

申请日：2011-12-22

申请人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L21/337 ,  H01L21/20

CPC分类号： H01L29/0619 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

摘要翻译： 一种用于制造氮化镓（GaN）材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底，形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分，以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

公开(公告)号：US20130087835A1

公开(公告)日：2013-04-11

申请号：US13270606

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/808 ,  H01L21/20 ,  H01L21/337

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

摘要翻译： 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物 耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。

公开(公告)号：US20130087803A1

公开(公告)日：2013-04-11

申请号：US13267552

申请日：2011-10-06

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L27/0629 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0688 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/872

摘要： An integrated device including a III-nitride HEMT and a Schottky diode includes a substrate comprising a first III-nitride material and a drift region comprising a second III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction. The integrated device also includes a first barrier layer coupled to the drift region and a channel layer comprising a third III-nitride material having a first bandgap and coupled to the barrier layer. The integrated device further includes a second barrier layer characterized by a second bandgap and coupled to the channel layer and a Schottky contact coupled to the drift region. The second bandgap is greater than the first bandgap.

摘要翻译： 包括III族氮化物HEMT和肖特基二极管的集成器件包括包括第一III族氮化物材料的衬底和包含耦合到衬底并沿着垂直方向邻近衬底设置的第二III族氮化物材料的漂移区域。 集成器件还包括耦合到漂移区的第一阻挡层和包含第三III族氮化物材料的沟道层，该第三III族氮化物材料具有第一带隙并耦合到阻挡层。 集成器件还包括第二阻挡层，其特征在于第二带隙并且耦合到沟道层和耦合到漂移区的肖特基接触。 第二个带隙大于第一个带隙。

公开(公告)号：US20130032814A1

公开(公告)日：2013-02-07

申请号：US13198666

申请日：2011-08-04

申请人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Richard J. Brown ,  Mahdan Raj

发明人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Richard J. Brown ,  Mahdan Raj

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/2255 ,  H01L29/207 ,  H01L29/30 ,  H01L29/36 ,  H01L29/66204 ,  H01L29/8083 ,  H01L29/8611

摘要： A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.

摘要翻译： 半导体器件包括具有第一导电类型的III族氮化物衬底和与III族氮化物衬底电耦合的第一电极。 半导体器件还包括具有第二导电类型的III族氮化物材料，其在再生界面处与III族氮化物衬底耦合，并且p-n结设置在III族氮化物衬底和再生长界面之间。

公开(公告)号：US20130032811A1

公开(公告)日：2013-02-07

申请号：US13198655

申请日：2011-08-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/808 ,  H01L29/20 ,  H01L21/337

CPC分类号： H01L29/8083 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924

摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。