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    Method and system for a GAN vertical JFET utilizing a regrown gate
    7.
    发明授权
    Method and system for a GAN vertical JFET utilizing a regrown gate 有权
    使用再生栅的GAN垂直JFET的方法和系统

    公开(公告)号：US09184305B2

    公开(公告)日：2015-11-10

    申请号：US13198655

    申请日：2011-08-04

    申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    IPC分类号： H01L21/337 ,  H01L29/808 ,  H01L29/10 ,  H01L29/66 ,  H01L29/20

    CPC分类号： H01L29/8083 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿着垂直方向。