Method for generating a detonation pressure
    51.
    发明授权
    Method for generating a detonation pressure 失效
    产生爆震压力的方法

    公开(公告)号:US5256430A

    公开(公告)日:1993-10-26

    申请号:US886717

    申请日:1992-05-21

    IPC分类号: B21D26/08 B23K20/08 A23L3/00

    CPC分类号: B23K20/08 Y10T29/49806

    摘要: A method for generating an underliquid shock pressure comprises the steps of igniting a combustible mixture gas to form detonation waves, imploding the detonation waves in their advancing direction, propagating a pressure obtained by imploding the detonation waves to a liquid, and converting the pressure to an underliquid pressure which is applied to a workpiece. The pressure obtained by imploding the detonation waves may be applied directly to an elastic rubber body, thus converting the pressure to an underelastomer shock pressure, which is then applied to the workpiece via the elastic body. An apparatus for generating an underliquid shock pressure comprises a combustion chamber whose cross-sectional area decreases from one end toward the other end of the chamber, an ignition chamber to which fuel is fed and in which a spark plug is positioned, a plurality of guidance paths extending from the ignition chamber and communicating with one end of the combustion chamber, each of the guidance paths having substantially the same length, and a pressure medium chamber connected to an opening of the other end of the combustion chamber having the smallest cross-sectional area. The pressure at the smallest cross-sectional area end of the combustion chamber is applied to a liquid to convert the pressure into underliquid shock pressure, which is then applied to a workpiece either directly or via an elastic body interposed between the liquid and the workpiece.

    Method of forming a temperature pattern of heater and silicon single
crystal growth control apparatus using the temperature pattern
    53.
    发明授权
    Method of forming a temperature pattern of heater and silicon single crystal growth control apparatus using the temperature pattern 失效
    使用温度图案形成加热器和硅单晶生长控制装置的温度模式的方法

    公开(公告)号:US5089238A

    公开(公告)日:1992-02-18

    申请号:US601096

    申请日:1990-10-22

    摘要: Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T.sub.B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation .DELTA.D is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern T.sub.B (X) on a screen of the display unit by using a mouse (78).

    RFID system, RFID cable system, and RFID cable laying method
    55.
    发明授权
    RFID system, RFID cable system, and RFID cable laying method 有权
    RFID系统,RFID电缆系统和RFID电缆铺设方法

    公开(公告)号:US08159346B2

    公开(公告)日:2012-04-17

    申请号:US11553642

    申请日:2006-10-27

    IPC分类号: G08B13/14

    CPC分类号: G06Q50/04 Y02P90/30

    摘要: When an RFID is attached to an object to assist testing operations, the following problems are encountered; (1) the RFID of write type tends to cause a failure and is troublesome due to the necessity of rewrite each time the situation is changed, (2) the incorporation of the reader function in a terminal block increases the cost, and (3) the known techniques are targeted for only the connecting operation and are not adapted for a sequence test that takes the most expense in time and effort. The operations are aided by using an RFID reader and a terminal having the function for accessing a database of circuit information, RFID information, and test procedure information.

    摘要翻译: 当RFID附着到对象以辅助测试操作时,遇到以下问题; (1)写入类型的RFID趋向于导致故障,并且由于每次改变情况需要重写时都是麻烦的,(2)将读取器功能并入端子块中会增加成本,(3) 已知技术仅针对连接操作,并且不适用于在时间和精力上花费最多费用的序列测试。 通过使用具有访问电路信息数据库,RFID信息和测试程序信息的功能的RFID读取器和终端来辅助操作。

    Monitoring system for valve device
    58.
    发明授权
    Monitoring system for valve device 有权
    阀门装置监控系统

    公开(公告)号:US07584668B2

    公开(公告)日:2009-09-08

    申请号:US11834727

    申请日:2007-08-07

    IPC分类号: G01B7/16

    CPC分类号: G01B7/18 F16K37/0083

    摘要: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

    摘要翻译: 根据本发明的阀装置的监测系统包括包括桥接电路的半导体单晶衬底和包括杂质扩散电阻器的桥接电路。 半导体单晶衬底安装在设置在驱动轴端部的阀装置的阀杆,阀杆,驱动轴或弹性体中的任一个上。 通过半导体单晶衬底测量阀装置的推力和扭矩,然后测量值用于监测阀装置。

    PROJECT MANAGEMENT SUPPORT DEVICE AND METHOD THEREOF
    59.
    发明申请
    PROJECT MANAGEMENT SUPPORT DEVICE AND METHOD THEREOF 审中-公开
    项目管理支持设备及其方法

    公开(公告)号:US20080288307A1

    公开(公告)日:2008-11-20

    申请号:US12019659

    申请日:2008-01-25

    IPC分类号: G06Q10/00

    摘要: Disclosed is a project management support device which compares, when a project is planned, standard work information stored in a standard work information database 21 with work information planned based on the standard work information according to a project target or a project condition, displays added or omitted work information extracted from the comparison and information to be noted which is related to the added or omitted work information on a display device 4. The project management support device further compares, during implementation of the project, the standard work information stored in the standard work information database 21 with work information changed based on progress or a state of the work in the project, and displays the added or omitted work information extracted from the comparison and information to be noted which is related to the added or omitted work information on the display device 4.

    摘要翻译: 公开了一种项目管理支持装置,其中,在项目计划时,根据项目目标或项目条件,将存储在标准工作信息数据库21中的标准工作信息与基于标准工作信息计划的工作信息进行比较,显示添加的或 省略从比较中提取的工作信息和与显示装置4上的添加或省略的工作信息相关的要注意的信息。 项目管理支援装置在工程实施过程中进一步比较存储在标准工作信息数据库21中的标准作业信息,其工作信息根据工程进度或工作状态而变化,并显示添加或省略的工作 从比较中提取的信息以及与显示装置4上的添加或省略的工作信息有关的要注意的信息。

    Surface-mounting capacitor
    60.
    发明授权
    Surface-mounting capacitor 有权
    表面贴装电容

    公开(公告)号:US07443654B2

    公开(公告)日:2008-10-28

    申请号:US11199839

    申请日:2005-08-09

    IPC分类号: H01G9/00

    CPC分类号: H01G9/012 H01G9/15

    摘要: A surface-mounting thin type capacitor includes a capacitor element having a shape of and two end portions which form a side surface of the capacitor element. Two anode terminals are disposed on lower surfaces of the end portions along the side surface to form a mounting surface substantially perpendicular to the side surface. A cathode terminal is disposed at a middle part of the capacitor element to form the mounting surface together with the anode terminals. The cathode terminal is not between the anode terminals spatially and thereby manufacturing process of the capacitor is simplified and it is easy to change the intended use of the capacitor.

    摘要翻译: 表面安装薄型电容器包括具有和形成电容器元件的侧表面的两个端部。 两个阳极端子沿着侧面设置在端部的下表面上以形成基本上垂直于侧表面的安装表面。 阴极端子设置在电容器元件的中间部分处以与阳极端子一起形成安装表面。 阴极端子不在空间上的阳极端子之间,从而简化了电容器的制造工艺,并且容易改变电容器的预期用途。