公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US20080298841A1

公开(公告)日：2008-12-04

申请号：US12127090

申请日：2008-05-27

申请人： Norio TOMITA ,  Yoshikazu Harada ,  Tetsushi Ito ,  Tetsuya Yamaguchi ,  Yoshiteru Kikuchi ,  Kenichi Isomi ,  Showtaro Okamoto

发明人： Norio TOMITA ,  Yoshikazu Harada ,  Tetsushi Ito ,  Tetsuya Yamaguchi ,  Yoshiteru Kikuchi ,  Kenichi Isomi ,  Showtaro Okamoto

IPC分类号： G03G15/00

CPC分类号： G03G15/757

摘要： It is an object to prevent distortions and deviations of images caused by the eccentricity of a driven gear mounted to a rotational shaft of a photosensitive drum. There are provided a driving gear which is secured to a rotational shaft of a rotational driving power source and is rotated at a constant peripheral speed, a driven gear secured coaxially to a rotational shaft of a cylindrical-shaped photosensitive member, a phase control gear having the same diameter as that of the driven gear and having the same rotational speed variation characteristic as that of the driven gear, and a transmission gear, and a driving force from the driving gear is transmitted to the driven gear through the phase control gear and the transmission gear.

摘要翻译： 本发明的目的是防止由安装到感光鼓的旋转轴的从动齿轮的偏心引起的图像的变形和偏差。 提供了一种驱动齿轮，该驱动齿轮固定在旋转驱动动力源的旋转轴上并以恒定的圆周速度旋转，同轴地与圆柱形感光构件的旋转轴固定的从动齿轮，具有 与从动齿轮的直径相同，并且具有与从动齿轮相同的转速变化特性和传动齿轮，并且来自驱动齿轮的驱动力通过相位控制齿轮传递到从动齿轮，并且 传动齿轮

公开(公告)号：US20080251822A1

公开(公告)日：2008-10-16

申请号：US11866682

申请日：2007-10-03

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L27/14645

摘要： According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.

摘要翻译： 根据本发明的一个方面，提供了一种放大型固态摄像装置，其使用通过在p型半导体衬底上外延地形成n型半导体层而形成的半导体衬底，并且形成有光电转换单元 在包括形成在G像素部分和B像素部分中的至少一个的光电转换单元下面的第一p型半导体层的n型半导体层中，形成为包围所述第一p型半导体层的第二p型半导体层 光电转换单元与第一p型半导体层一起并且具有直到第一p型半导体层的深度和形成为包围R像素部分并具有直到p的深度的第三p型半导体层 型半导体衬底。

公开(公告)号：US20080131150A1

公开(公告)日：2008-06-05

申请号：US11944896

申请日：2007-11-26

申请人： Norio TOMITA ,  Yoshikazu Harada ,  Tetsushi Ito ,  Showtaro Okamoto ,  Tetsuya Yamaguchi ,  Yoshiteru Kikuchi

发明人： Norio TOMITA ,  Yoshikazu Harada ,  Tetsushi Ito ,  Showtaro Okamoto ,  Tetsuya Yamaguchi ,  Yoshiteru Kikuchi

IPC分类号： G03G15/01

CPC分类号： G03G15/0131 ,  G03G15/5058 ,  G03G2215/00025 ,  G03G2215/00059 ,  G03G2215/0016 ,  G03G2215/0132 ,  G03G2215/0161

摘要： An image forming apparatus including: image forming sections, each image forming section forming an image of a color component among plural color components under a predetermined condition, and forming a pattern of each color component for adjusting the condition; a detecting section that reads the formed patterns so as to perform a temporary detection and a main detection of a deviation from a reference under the condition; and a correction control section that determines whether the deviation of the temporary detection exceeds a predetermined threshold value or not, and when the deviation exceeds the threshold value, executes the main detection to fully detect the deviation so as to correct the condition, wherein the correction control section controls to form the pattern for the temporary detection, the number of the color components for the temporary detection being fewer than those of the patterns to be used for the main detection.

摘要翻译： 一种图像形成设备，包括：图像形成部分，每个图像形成部分在预定条件下形成多个颜色分量中的颜色分量的图像，并且形成用于调节条件的每个颜色分量的图案; 检测部，其读取形成的图案，以便在该条件下执行临时检测和主要检测与参考的偏差; 以及校正控制部，其判断临时检测的偏差是否超过规定的阈值，并且当偏差超过阈值时，执行主检测以完全检测偏差，以便校正该条件，其中校正 控制部分控制以形成用于临时检测的图案，用于临时检测的颜色分量的数量少于用于主检测的图案的颜色分量的数量。

公开(公告)号：US20070167283A1

公开(公告)日：2007-07-19

申请号：US11643782

申请日：2006-12-22

申请人： Nobuhiro Sato ,  Tetsuya Yamaguchi ,  Kazuyuki Noda ,  Akira Fukatsu ,  Mikio Iwase ,  Kazutoshi Nozaki ,  Atsushi Honda

发明人： Nobuhiro Sato ,  Tetsuya Yamaguchi ,  Kazuyuki Noda ,  Akira Fukatsu ,  Mikio Iwase ,  Kazutoshi Nozaki ,  Atsushi Honda

IPC分类号： F16H61/26

CPC分类号： F16H61/12 ,  F16H2061/122 ,  F16H2061/1232 ,  F16H2061/126 ,  Y10S477/906 ,  Y10T477/6936 ,  Y10T477/693635 ,  Y10T477/6939 ,  Y10T477/693973

摘要： A hydraulic control apparatus, provided with a manual shift valve that outputs a forward range pressure and a reverse range pressure, and a linear solenoid valve that outputs an engagement pressure to the hydraulic servo that engages during reverse travel when energized, includes a fourth clutch relay valve that is interposed between the linear solenoid valve and the hydraulic servo. The fourth clutch relay valve communicates an engagement pressure of the linear solenoid valve to the hydraulic servo by locking in the normal position when a signal pressure of the solenoid valve is input, and communicates a reverse range pressure to the hydraulic servo by being switched to a fail position by the reverse range pressure during a failure in which the fourth clutch relay valve is de-energized. Thereby, it is possible to establish a reverse speed during a failure in which the solenoid valve is de-energized.

摘要翻译： 一种液压控制装置，具有输出前进档位压力和倒档范围压力的手动换档阀，以及向通电时反接行驶时接合的液压伺服机构输出接合压力的线性电磁阀，包括第四离合器继电器 介于线性电磁阀和液压伺服之间的阀。 当输入电磁阀的信号压力时，第四离合器继电器阀通过锁定在正常位置将线性电磁阀的接合压力传递到液压伺服机构，并且通过切换到液压伺服系统将反向范围压力传递给液压伺服机构 在第四离合器继动阀被断电的故障期间由反向范围压力引起的故障位置。 因此，可以在电磁阀断电的故障期间建立倒车速度。

公开(公告)号：US07166828B2

公开(公告)日：2007-01-23

申请号：US11087602

申请日：2005-03-24

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/035272

摘要： A solid-state image sensing device including an image sensing region in which a matrix of unit pixels, each including a photodiode in a surface portion of a semiconductor substrate, is provided; a read transistor connected between a respective photodiode and a detection node; an amplifying transistor connected to the detection node so as to amplify the signal charge output to the detection node and to output a pixel signal to a signal output line reading out the pixel signal output; a reset transistor connected to the detection node and to a discharge node; and an address transistor connected to a source of the amplifying transistor for selecting an address of the photodiode when an address signal is supplied to a gate.

摘要翻译： 一种固态图像感测装置，其包括图像感测区域，其中设置了在半导体衬底的表面部分中包括光电二极管的单位像素矩阵; 连接在相应光电二极管和检测节点之间的读取晶体管; 连接到检测节点的放大晶体管，以放大输出到检测节点的信号电荷，并将像素信号输出到读出像素信号输出的信号输出线; 连接到检测节点和放电节点的复位晶体管; 以及连接到放大晶体管的源极的地址晶体管，当地址信号被提供给栅极时，选择光电二极管的地址。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US20050242385A1

公开(公告)日：2005-11-03

申请号：US11095592

申请日：2005-04-01

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

IPC分类号： H01L27/108 ,  H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14643

摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

摘要翻译： 固态成像装置包括第一导电类型的衬底。 在衬底的表面上设置包括第一栅电极和第一和第二杂质区的晶体管。 第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。 第二导电类型的第三杂质区域形成在衬底的表面中并且与第一栅电极相对的一侧与第二杂质区隔开。 在第二杂质区下方形成第四杂质区，并与第三杂质区连接。 在基板上设置第二栅电极。 第二导电类型的第五杂质区域形成在衬底的表面中。 第三和第五杂质区夹在第二栅电极下方的区域。

公开(公告)号：US06521925B1

公开(公告)日：2003-02-18

申请号：US09537745

申请日：2000-03-30

申请人： Akiko Mori ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroaki Ishiwata ,  Hidetoshi Nozaki

发明人： Akiko Mori ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroaki Ishiwata ,  Hidetoshi Nozaki

IPC分类号： H01L31062

CPC分类号： H01L29/0847 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14654 ,  H01L31/0352

摘要： A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.

摘要翻译： 固态图像传感器包括设置在p型衬底或p型阱中并由用于存储光电转换的信号电荷的第一n型区域，设置在衬底或阱上方的栅电极组成的光电二极管， 与光电二极管的一端相邻，以及设置在基板的表面或与光电二极管相对的阱的n型漏极，门电极与其间进行访问。 提供了第二n型区域，其形成为与栅极电极侧上的第一n型区域的上部接触，并且其一端形成为与第一n型区域的一端自对准 栅电极成为光电二极管的一部分。 这种结构防止信号读取晶体管部分的短沟道效应，并且减少或消除存储在光电二极管中的剩余信号电荷，从而降低噪声并提高传感器的灵敏度。

公开(公告)号：US06344666B1

公开(公告)日：2002-02-05

申请号：US09407847

申请日：1999-09-29

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hiroaki Ishiwata ,  Akiko Mori

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hiroaki Ishiwata ,  Akiko Mori

IPC分类号： H01L3100

CPC分类号： H01L27/14609 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02164

摘要： In an amplifier-type solid-state image sensor device, each unit cell comprises a photoconverter and a signal scanning circuit in an image sensing region on a semiconductor substrate, a metal film has an opening region for defining regions where light is radiated in the photoconverters of the unit cells, and a center position of the opening region of the metal film is displaced to the side of the center of the image sensing region with respect to a center portion of the photoconverter, so that the amount of light entering the center of the semiconductor chip and the peripheral portions of the semiconductor chip can be made equal, thereby obtaining substantially the same sensitivity at the center and peripheral portions of the semiconductor chip.

摘要翻译： 在放大器型固态图像传感器装置中，每个单位单元包括在半导体衬底上的图像感测区域中的光转换器和信号扫描电路，金属膜具有用于限定在光转换器中照射光的区域的开口区域 ，并且金属膜的开口区域的中心位置相对于光转换器的中心部分位移到图像感测区域的中心侧，使得进入光电转换器的中心的光量 可以使半导体芯片和半导体芯片的周边部分相等，从而在半导体芯片的中心和周边部分获得基本上相同的灵敏度。