摘要:
A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled between the gates and the sources of the high-frequency power field effect transistors. The gate protective diodes have an n type region formed over the main surface of a p type epitaxial layer, a first p type region formed at the center of the main surface of the n type region, a second p type region formed over the main surface of the epitaxial layer around the n type region from the periphery of the main surface of the n type region, and p+ type buried layers for coupling the second p type region to a substrate body. The distance between the end portions of the p+ type buried layers and the n+ type region is 7 μm or more.
摘要翻译:一种高频功率放大器,其类型安装在具有高频功率场效应晶体管和栅极保护二极管的手机的RF模块中,高频功率场效应晶体管和栅极保护二极管耦合在高频功率场效应晶体管的栅极和源极之间。 栅极保护二极管具有形成在p型外延层的主表面上的n型区域,形成在n型区域的主表面中心的第一p型区域,形成在n型区域的主表面上的第二p型区域 从n型区域的主表面周围的n型区域周围的外延层和用于将第二p型区域耦合到衬底本体的p +型掩埋层。 p +型掩埋层的端部与n +型区域之间的距离为7μm以上。
摘要:
The present invention relates to a pyrimidine compound or a pharmaceutically acceptable salt thereof represented by the following formula [I] wherein each symbol is as defined in the specification and a method of therapeutically or prophylactically treating an undesirable cell proliferation, comprising administering such a compound. The compound of the present invention has superior activity in suppressing undesirable cell proliferation, particularly, an antitumor activity, and is useful as an antitumor agent for the prophylaxis or treatment of cancer, rheumatism, and the like. In addition, the compound of the present invention can be a more effective antitumor agent when used in combination with other antitumor agents such as an alkylating agent or metabolism antagonist.
摘要:
Disclosed is a semiconductor device including built-in interface circuits whose operations are selected in response to initialization operation from a host apparatus coupled thereto. In the semiconductor device, a first synchronous interface circuit and a second asynchronous interface circuit using differential signals, share the external terminals of the differential signals (the external differential signal terminals). For example, the semiconductor device adopts an MMC interface circuit as the first interface circuit and a USB interface circuit as the second interface circuit, while keeping the IC card interface function. The semiconductor device selects operations of the adopted interface circuits exclusively. One selection method is to enable an interface operation of the first interface circuit, upon detection of a plurality of edge changes in a clock input from an external clock terminal, which is for initializing the first interface circuit when power supply to the semiconductor device is started.
摘要:
A memory card is provided in which power consumption is reduced by the pull-up resistor of an input terminal and a misoperation induced by the pull-down resistor of a host apparatus is prevented. The memory card has a select terminal connected to the pull-up resistor. When the mode of the memory card is determined based on an input from the select terminal, a relatively low resistance value is selected for the pull-up resistor of the select terminal before a determination timing and the pull-up resistor is restored to an initial resistance value after the mode determination. A relatively high resistance value reduces a leakage current consumed by the pull-up resistor of the select terminal. When a pull-down resistor is connected to the terminal of a memory card host to which the memory card is attached, if the resistance value of the pull-up resistor is excessively high, it is influenced by the drawing in of a current by the pull-down resistor. If the resistance value of the pull-up resistor of the select terminal is lowered at the time of mode determination, an adverse effect of the lowering of a potential by the pull-down resistor can be circumvented.
摘要:
The present invention relates to a stamper used for an injection molding of a resin material and a manufacturing method thereof. It is provided with such stamper as being excellent in durability in use without causing corrosion at a portion contacting with the resin material, wherein an anti-corrosion film made of any one of alloy selected from a nickel alloy, a silver alloy or a copper alloy is formed on a surface of the stamper contacting with the resin material. Further, it is provided with a method comprising steps of: forming anti-corrosion film on the surface of a mold for manufacturing the stamper; forming the stamper on the anti-corrosion film; and separating the stamper and the anti-corrosion film in a body from the mold.
摘要:
A recording disc and recorded information reproducing apparatus and method for immediately starting reproduction of information when a push-pull based tracking control is employed to reproduce recorded information from the recording disc. The recording disc comprises an information data area for recording recording marks which carry information data in columns, and a control data area for recording identification information indicative of a recording pattern of the recording marks in the information data area.
摘要:
An optical recording medium includes a recording layer containing as a primary component an alloy containing at least two elements selected from the group consisting of Fe, Al and Si and the alloy contained in the recording layer as a primary component has a composition [x1, y1, z1] in terms of the ternary composition diagram that falls within a region of a pentagon defined by straight lines connecting points [57, 43, 0], [0, 55, 45], [15, 0, 85], [89, 11, 0] and [0, 16, 84] in the ternary composition diagram.According to the thus configured optical recording medium, only minimal load is placed on the global environment.
摘要:
Preformatted areas in at least the most distal recording layer from an object lens among a plurality of recording layers in an optical disc include guard areas at both ends of the respective recording layer in the tracing direction. No data is recorded on the guard areas. The guard area length GL is determined to satisfy the following formula: GL≧YL+T×(NA/n)/[1−(NA/n)2]1/2 where YL is a maximum allowable value of position deviation between the preformatted areas in the most distal recording layer and in another recording layer in the tracing direction; NA is the numerical aperture of the object lens; T is a distance between the most distal and the another recording layer; and “n” is an refraction index of a medium between the most distal and the another recording layers.
摘要:
To present a material for stamper free from deterioration of stamper quality due to reaction with an electron-attracting radical contained in the resist material. An electrode formed on the surface of a patterned resist film 2 for electrocasting a stamper material is formed of a nickel alloy thin film 3 comprising Ni element as a principal component, and Ru element added in a range of less than 25 percent by weight.
摘要:
An information recording medium using a substrate having light transmittancy permitting high density recording to be achieved and a recording method permitting such an information recording medium using a substrate having light transmittancy to be recorded in a high density are provided. The information recording medium is formed by layering an ITO film and EB resist on a transparent insulating substrate formed of a glass material having light transmittancy. At the time of recording information, as the ITO film is set at a ground potential, an electron beam having recording information is irradiated upon a surface of the EB resist for a prescribed scanning to perform electron beam exposure, and pits corresponding to the information to be recorded are formed at the exposed positions.