中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

57 records (took 0.025 seconds)

    COMPLETING MEMORY REPAIR OPERATIONS INTERRUPTED BY POWER LOSS
    51.
    发明申请
    COMPLETING MEMORY REPAIR OPERATIONS INTERRUPTED BY POWER LOSS 有权

    公开(公告)号：US20220066893A1

    公开(公告)日：2022-03-03

    申请号：US17005027

    申请日：2020-08-27

    Applicant: Micron Technology, Inc.

    Inventor： Alan J. Wilson ,  Donald Martin Morgan

    IPC: G06F11/20 ,  G11C29/00

    Abstract: Methods, systems, and devices for completing memory repair operations interrupted by power loss are described. A command to perform a memory repair of a memory device may be received. A memory repair process of the memory device may be initiated, based on the command. The memory repair process may include programming fuse elements of the memory device. Information associated with the initiated memory repair process may be stored in a non-volatile memory. The memory repair process may be interrupted by a power interruption. During powerup of the memory device, it may be determined that the memory repair process was initiated and not completed before the powerup, based on the stored information. The memory repair process of the memory device may be continued, based on the determination. Upon completion of the memory repair process, the stored information may be cleared.

    Modifying subsets of memory bank operating parameters
    52.
    发明授权
    Modifying subsets of memory bank operating parameters 有权

    公开(公告)号：US11138107B2

    公开(公告)日：2021-10-05

    申请号：US16796860

    申请日：2020-02-20

    Applicant: Micron Technology, Inc.

    Inventor： Christopher G. Wieduwilt ,  Alan J. Wilson

    IPC: G06F12/06 ,  G11C29/50 ,  G11C11/56 ,  G11C29/00

    Abstract: Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.

    INTELLIGENT POST-PACKAGING REPAIR
    53.
    发明申请
    INTELLIGENT POST-PACKAGING REPAIR 有权

    公开(公告)号：US20210124660A1

    公开(公告)日：2021-04-29

    申请号：US17142828

    申请日：2021-01-06

    Applicant: Micron Technology, Inc.

    Inventor： Alan J. Wilson

    IPC: G06F11/20 ,  G11C17/16 ,  G11C17/18 ,  G06F11/10 ,  G06F3/06 ,  G06F12/02 ,  G06F11/16

    Abstract: Techniques are provided for storing a row address of a defective row of memory cells to a bank of non-volatile storage elements (e.g., fuses or anti-fuses). After a memory device has been packaged, one or more rows of memory cells may become defective. In order to repair (e.g., replace) the rows, a post-package repair (PPR) operation may occur to replace the defective row with a redundant row of the memory array. To replace the defective row with a redundant row, an address of the defective row may be stored (e.g., mapped) to an available bank of non-volatile storage elements that is associated with a redundant row. Based on the bank of non-volatile storage elements the address of the defective row, subsequent access operations may utilize the redundant row and not the defective row.

    Apparatuses and methods for soft post-package repair
    54.
    发明授权
    Apparatuses and methods for soft post-package repair 有权

    公开(公告)号：US10832791B2

    公开(公告)日：2020-11-10

    申请号：US16256796

    申请日：2019-01-24

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Alan J. Wilson

    IPC: G11C29/02 ,  G11C29/32 ,  G11C17/18 ,  G11C11/408 ,  G11C7/22 ,  G11C7/10 ,  G11C11/4076 ,  G11C29/00 ,  G11C29/44

    Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for soft post-package repair (SPPR). After packaging, it may be necessary to perform post-package repair operations on rows of the memory. During a scan mode of an SPPR operation, addresses provided by a fuse bank may be examined to determine if they are open addresses or if the bad row of memory is a redundant row of memory. The open addresses and the bad redundant addresses may be stored in volatile storage elements, such as in latch circuits. During a soft send mode of a SPPR operation, the address previously associated with the bad row of memory may be associated with the open address instead, and the address of the bad redundant row may be disabled.

Patent Agency Ranking