公开(公告)号：US20130154022A1

公开(公告)日：2013-06-20

申请号：US13331214

申请日：2011-12-20

申请人： Sheng-Chen Chung ,  Ming Zhu ,  Harry-Hak-Lay Chuang ,  Bao-Ru Young ,  Wei-Cheng Wu ,  Chia Ming Liang ,  Sin-Hua Wu

发明人： Sheng-Chen Chung ,  Ming Zhu ,  Harry-Hak-Lay Chuang ,  Bao-Ru Young ,  Wei-Cheng Wu ,  Chia Ming Liang ,  Sin-Hua Wu

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/28088 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

摘要： A method includes forming a PMOS device. The method includes forming a gate dielectric layer over a semiconductor substrate and in a PMOS region, forming a first metal-containing layer over the gate dielectric layer and in the PMOS region, performing a treatment on the first metal-containing layer in the PMOS region using an oxygen-containing process gas, and forming a second metal-containing layer over the first metal-containing layer and in the PMOS region. The second metal-containing layer has a work function lower than a mid-gap work function of silicon. The first metal-containing layer and the second metal-containing layer form a gate of the PMOS device.

摘要翻译： 一种方法包括形成PMOS器件。 该方法包括在半导体衬底和PMOS区域上形成栅极电介质层，在栅极电介质层和PMOS区域上形成第一含金属层，对PMOS区域中的第一含金属层进行处理 使用含氧处理气体，并在第一含金属层和PMOS区域上形成第二含金属层。 第二含金属层具有低于硅的中间间隙功函数的功函数。 第一含金属层和第二含金属层形成PMOS器件的栅极。

公开(公告)号：US20130126977A1

公开(公告)日：2013-05-23

申请号：US13299152

申请日：2011-11-17

申请人： Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Ming Zhu ,  Bao-Ru Young

发明人： Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Ming Zhu ,  Bao-Ru Young

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L27/0207 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/32139 ,  H01L21/823456 ,  H01L27/092 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of dummy gates over a substrate. The dummy gates extend along a first axis. The method includes forming a masking layer over the dummy gates. The masking layer defines an elongate opening extending along a second axis different from the first axis. The opening exposes first portions of the dummy gates and protects second portions of the dummy gates. A tip portion of the opening has a width greater than a width of a non-tip portion of the opening. The masking layer is formed using an optical proximity correction (OPC) process. The method includes replacing the first portions of the dummy gates with a plurality of first metal gates. The method includes replacing the second portions of the dummy gates with a plurality of second metal gates different from the first metal gates.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成多个虚拟栅极。 虚拟门沿着第一轴延伸。 该方法包括在伪栅极上形成掩模层。 掩蔽层限定沿着不同于第一轴线的第二轴线延伸的细长开口。 开口暴露虚拟门的第一部分并保护虚拟门的第二部分。 开口的尖端部分的宽度大于开口的非尖端部分的宽度。 使用光学邻近校正（OPC）工艺形成掩模层。 该方法包括用多个第一金属栅极替换伪栅极的第一部分。 该方法包括用与第一金属栅极不同的多个第二金属栅极替换伪栅极的第二部分。

公开(公告)号：US08420402B2

公开(公告)日：2013-04-16

申请号：US13374995

申请日：2012-01-27

申请人： Jianjun He ,  Anita Hong ,  Qingheng Wang ,  Raman Khosrow Afshar ,  Ming Zhu ,  Vera Rakhmanova

发明人： Jianjun He ,  Anita Hong ,  Qingheng Wang ,  Raman Khosrow Afshar ,  Ming Zhu ,  Vera Rakhmanova

IPC分类号： C09B29/16 ,  G01N33/52 ,  C07D311/82 ,  C07D311/86 ,  C07D311/88

CPC分类号： C09B7/00 ,  Y10T436/18 ,  Y10T436/182

摘要： The present invention is generally directed to thiol quantitation assays, methods of performing the assays, and compounds used in the assays. It is more specifically directed to assays that include one or more disulfides and related molecules and methods. The disulfides contain a FRET pair.

摘要翻译： 本发明一般涉及硫醇定量测定，进行测定的方法和用于测定中的化合物。 更具体地涉及包括一种或多种二硫化物和相关分子和方法的测定。 二硫化物含有FRET对。

公开(公告)号：US08304842B2

公开(公告)日：2012-11-06

申请号：US12836106

申请日：2010-07-14

申请人： Han-Guan Chew ,  Ming Zhu ,  Lee-Wee Teo ,  Harry-Hak-Lay Chuang

发明人： Han-Guan Chew ,  Ming Zhu ,  Lee-Wee Teo ,  Harry-Hak-Lay Chuang

IPC分类号： H01L27/088 ,  H01L29/78

CPC分类号： H01L21/768 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823871 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： The disclosure relates to integrated circuit fabrication, and more particularly to an interconnection structure for N/P metal gates. An exemplary structure for an interconnection structure comprises a first gate electrode having a first portion of a first work-function metal layer under a first portion of a signal metal layer; and a second gate electrode having a second portion of the first work-function metal layer interposed between a second work-function metal layer and a second portion of the signal metal layer, wherein the second portion of the signal metal layer is over the second portion of the first work-function metal layer, wherein the second portion of the signal metal layer and the first portion of the signal metal layer are continuous, and wherein a maximum thickness of the second portion of the signal metal layer is less than a maximum thickness of the first portion of the signal metal layer.

摘要翻译： 本公开涉及集成电路制造，更具体地涉及用于N / P金属栅极的互连结构。 用于互连结构的示例性结构包括在信号金属层的第一部分下方具有第一功函数金属层的第一部分的第一栅极电极; 以及第二栅电极，其具有插入在第二功函数金属层和信号金属层的第二部分之间的第一功函金属层的第二部分，其中信号金属层的第二部分在第二部分之上 的第一功函数金属层，其中信号金属层的第二部分和信号金属层的第一部分是连续的，并且其中信号金属层的第二部分的最大厚度小于最大厚度 的信号金属层的第一部分。

公开(公告)号：US08129193B2

公开(公告)日：2012-03-06

申请号：US12804739

申请日：2010-07-28

申请人： Jianjun He ,  Anita Hong ,  Qingzheng Wang ,  Raman Khosrow Afshar ,  Ming Zhu ,  Vera Rakhmanova

发明人： Jianjun He ,  Anita Hong ,  Qingzheng Wang ,  Raman Khosrow Afshar ,  Ming Zhu ,  Vera Rakhmanova

IPC分类号： G01N33/52 ,  C09B29/16 ,  C07D311/82 ,  C07D311/86 ,  C07D311/88

CPC分类号： C09B7/00 ,  Y10T436/18 ,  Y10T436/182

摘要： The present invention is generally directed to thiol quantitation assays, methods of performing the assays, and compounds used in the assays. It is more specifically directed to assays that include one or more disulfides and related molecules and methods. The disulfides contain a FRET pair.

摘要翻译： 本发明一般涉及硫醇定量测定，进行测定的方法和用于测定中的化合物。 更具体地涉及包括一种或多种二硫化物和相关分子和方法的测定。 二硫化物含有FRET对。

公开(公告)号：US20120025309A1

公开(公告)日：2012-02-02

申请号：US12846457

申请日：2010-07-29

申请人： Chun-Hung Chen ,  Lee-Wee Teo ,  Ming Zhu ,  Bao-Ru Young ,  Harry Hak-Lay Chuang

发明人： Chun-Hung Chen ,  Lee-Wee Teo ,  Ming Zhu ,  Bao-Ru Young ,  Harry Hak-Lay Chuang

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/513 ,  H01L29/495

摘要： An offset gate semiconductor device includes a substrate and an isolation feature formed in the substrate. An active region is formed in the substrate substantially adjacent to the isolation feature. An interface layer is formed on the substrate over the isolation feature and the active region. A polysilicon layer is formed on the interface layer over the isolation feature and the active region. A trench being formed in the polysilicon layer over the isolation feature. The trench extending to the interface layer. A fill layer is formed to line the trench and a metal gate formed in the trench.

摘要翻译： 偏移门半导体器件包括衬底和形成在衬底中的隔离特征。 在基板上基本上与隔离特征相邻地形成有源区。 在隔离特征和有源区上的衬底上形成界面层。 在隔离特征和有源区上的界面层上形成多晶硅层。 在隔离特征上形成在多晶硅层中的沟槽。 沟槽延伸到界面层。 形成填充层以在沟槽中形成沟槽和形成的金属栅极。

公开(公告)号：US20110201172A1

公开(公告)日：2011-08-18

申请号：US12706782

申请日：2010-02-17

申请人： Han-Guan CHEW ,  Ming Zhu ,  Lee-Wee Teo ,  Harry-Hak-Lay Chuang

发明人： Han-Guan CHEW ,  Ming Zhu ,  Lee-Wee Teo ,  Harry-Hak-Lay Chuang

IPC分类号： H01L21/762 ,  H01L21/311

CPC分类号： H01L21/3081 ,  H01L21/76232

摘要： The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.

摘要翻译： 本公开涉及集成电路制造，更具体地涉及一种用于制造半导体器件的方法。 用于制造半导体器件的示例性方法包括提供衬底; 在衬底的前侧和后侧形成衬垫氧化物层; 在衬底的前侧和后侧上的衬垫氧化物层上形成硬掩模层; 以及在衬底的前侧的衬垫氧化物层之上使硬掩模层变薄。

公开(公告)号：US20110193162A1

公开(公告)日：2011-08-11

申请号：US12701824

申请日：2010-02-08

申请人： Harry-Hak-Lay CHUANG ,  Lee-Wee Teo ,  Ming Zhu

发明人： Harry-Hak-Lay CHUANG ,  Lee-Wee Teo ,  Ming Zhu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66659 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78

摘要： A method of fabricating a laterally diffused metal oxide semiconductor (LDMOS) transistor includes forming a dummy gate over a substrate. A source and a drain are formed over the substrate on opposite sides of the dummy gate. A first silicide is formed on the source. A second silicide is formed on the drain so that an unsilicided region of at least one of the drain or the source is adjacent to the dummy gate. The unsilicided region of the drain provides a resistive region capable of sustaining a voltage load suitable for a high voltage LDMOS application. A replacement gate process is performed on the dummy gate to form a gate.

摘要翻译： 制造横向扩散的金属氧化物半导体（LDMOS）晶体管的方法包括在衬底上形成虚拟栅极。 在虚拟栅极的相对侧上的衬底上形成源极和漏极。 在源上形成第一硅化物。 在漏极上形成第二硅化物，使得至少一个漏极或源极的非硅化区域与虚拟栅极相邻。 漏极的非硅化区域提供能够承受适合于高电压LDMOS应用的电压负载的电阻区域。 在虚拟栅极上执行替换栅极处理以形成栅极。

公开(公告)号：US20100297215A1

公开(公告)日：2010-11-25

申请号：US12463789

申请日：2009-05-11

申请人： William E. Fahl ,  Nalini Raghavachari ,  Ming Zhu ,  John A. Kink

发明人： William E. Fahl ,  Nalini Raghavachari ,  Ming Zhu ,  John A. Kink

IPC分类号： A61K9/127 ,  A61P35/00 ,  C12Q1/68 ,  A61K31/428 ,  A61K31/352 ,  A61K31/275 ,  A61K31/497 ,  A61K31/05 ,  A61K31/085

CPC分类号： A61K31/497 ,  A61K9/127 ,  A61K9/1272 ,  A61K35/36

摘要： Compositions, pharmaceutical preparations and methods are disclosed for protecting non-neoplastic cells from damage caused by cancer chemotherapeutic agents or radiation therapy, during the course of cancer therapy or bone marrow transplant. These are based on the use of chemoprotective inducing agents that induce or increase production of cellular detoxification enzymes in target cell populations. The compositions and methods are useful to reduce or prevent hair loss, gastrointestinal distress and lesions of the skin and oral mucosa that commonly occur in patients undergoing cancer therapy. Also disclosed is a novel assay system for identifying new chemoprotective inducing agents.

摘要翻译： 公开了用于在癌症治疗或骨髓移植过程中保护非肿瘤细胞免受由癌症化学治疗剂或放射治疗引起的损伤的组合物，药物制剂和方法。 这些是基于在靶细胞群体中诱导或增加细胞解毒酶的产生的化学保护诱导剂的用途。 组合物和方法可用于减少或预防通常在经历癌症治疗的患者中发生的脱发，胃肠道窘迫和皮肤和口腔粘膜的损伤。 还公开了用于鉴定新的化学保护诱导剂的新型测定系统。

公开(公告)号：US20090138071A1

公开(公告)日：2009-05-28

申请号：US12084470

申请日：2006-11-16

申请人： Yingsheng Cheng ,  Xing Zhou ,  Ming Zhu

发明人： Yingsheng Cheng ,  Xing Zhou ,  Ming Zhu

IPC分类号： A61F2/06

CPC分类号： A61F2/90 ,  A61F2/07 ,  A61F2/2412 ,  A61F2/2418 ,  A61F5/0076 ,  A61F2002/044 ,  A61F2230/0078 ,  A61F2250/0039

摘要： The present invention relates to a medical stent, and in particular to a cardia stent for treatment on the narrow carida of the oesophagus. The cardia stent according to the present invention is woven by wires of shape memory NiTi alloy. There is a drum-shaped locating port at its upper end, and a trumpet-shaped locating port at its lower end. The upper drum-shaped locating port is connected with the lower trumpet-shaped locating port by a supporting net tube. The remaining portions other than the drum-shaped locating port are coated with a membrane of medical flexible material that can be implanted into a human body. The cardia stent comprises at least an anti-reflux valve. The anti-reflux valve is of a triple-petal structure protruding downward that is made from a membrane of medical flexible material that can be implanted into a human body. The cardia stent has the advantages of: difficult to shift, matching with carida anatomy, high anti-reflux ability, easy operation, resisting the corrosion of gastric juice, and it can be used in expansion treatment on the narrow carida caused by variable reasons.

摘要翻译： 医疗支架技术领域本发明涉及一种医用支架，特别是涉及一种用于在食道狭窄的假体上进行治疗的贲门支架。 根据本发明的贲门支架由形状记忆NiTi合金的丝线编织。 在其上端有一个鼓形定位口，在其下端有一个喇叭形定位口。 上鼓形定位口通过支撑网管与下喇叭形定位口连接。 鼓形定位口以外的其余部分涂有可植入人体的医用柔性材料膜。 贲门支架至少包括一个抗回流阀。 防回流阀具有向下突出的三瓣瓣结构，其由可植入人体的医用柔性材料的膜制成。 贲门支架的优点是：难以移位，与carida解剖相符，抗反流能力强，操作方便，抵抗胃液腐蚀，可用于扩张治疗由于可变原因引起的狭窄carida。