-
51.发明授权Method and structure for addressing hot carrier degradation in high voltage devices 有权解决高压设备热载流子劣化的方法和结构公开(公告)号：US07180133B1
公开(公告)日：2007-02-20
申请号：US11016147
申请日：2004-12-17
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/0619 , H01L29/0634 , H01L29/086 , H01L29/0878 , H01L29/7835
摘要： In a method and structure for a high voltage LDMOS with reduced hot carrier degradation, the thick field oxide is eliminated and a reduced surface field achieved instead by including adjacent p+ and n+ regions in the drain well and shorting these regions to each other, or by including a p+ region in the drain well and biasing it to a positive voltage relative to the source voltage.
摘要翻译： 在具有减少的热载流子劣化的高电压LDMOS的方法和结构中，消除了厚场氧化物，并且通过在漏极阱中包括相邻的p +和n +区域而将这些区域彼此短路，或者通过 包括漏极阱中的p +区，并将其偏压到相对于源极电压的正电压。
-
52.发明授权公开(公告)号：US07145187B1
公开(公告)日：2006-12-05
申请号：US10735500
申请日：2003-12-12
IPC分类号： H01L27/108 , H01L29/76 , H01L23/62 , H01L21/8238 , G11B5/33 , H02H9/00
CPC分类号： H01L29/747 , H01L27/0262
摘要： In a multiple input ESD protection structure, the inputs are isolated from the substrate by highly doped regions of opposite polarity to the input regions. Dual polarity is achieved by providing a symmetrical structure with n+ and p+ regions forming each dual polarity input. The inputs are formed in a p-well which, in turn, is formed in a n-well. Each dual polarity input is isolated by a PBL under the p-well, and a NISO underneath the n-well. An isolation ring separates and surrounds the inputs. The isolation ring comprises a p+ ring or a p+ region, n+ region, and p+ region formed into adjacent rings.
摘要翻译： 在多输入ESD保护结构中，输入通过与输入区域相反极性的高度掺杂区域与衬底隔离。 通过提供形成每个双极性输入的n +和p +区域的对称结构来实现双极性。 输入形成在p阱中，其又形成在n阱中。 每个双极性输入由p-p下的PBL隔离，并在n阱下面隔开一个NISO。 隔离环分隔并围绕输入。 隔离环包括形成相邻环的p +环或p +区，n +区和p +区。
-
53.发明授权Active pixel sensor cell with integrating varactor and method for using such cell 有权具有积分变容二极管的有源像素传感器单元和使用这种单元的方法公开(公告)号：US07102117B2
公开(公告)日：2006-09-05
申请号：US10863058
申请日：2004-06-08
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H04N5/35572 , H04N5/361 , H04N5/37452
摘要： An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.
摘要翻译： 包括至少一个光电二极管和复位电路的有源像素传感器单元和耦合到光电二极管的积分变容二极管，用于读出这样的单元的方法以及包括这种单元阵列的图像传感器。 在曝光间隔期间，可以将光电二极管暴露于光子，以在光电二极管的第一节点处累积次曝光电荷序列。 在曝光间隔的不同子曝光间隔期间，每个次曝光电荷在第一节点处累积。 在每个复位间隔的每一个期间复位光电二极管，每个复位间隔发生在不同的次曝光间隔之前。 指示在曝光间隔期间在存储节点处累积的曝光电荷的输出信号可以从单元断言，其中曝光电荷指示所有次曝光电荷的总和。
-
公开(公告)号：US07037814B1
公开(公告)日：2006-05-02
申请号：US10683858
申请日：2003-10-10
CPC分类号： H01L22/14 , H01L21/26513
摘要： In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the mask. The diffusion of dopant is completed by making use of an annealing stage.
摘要翻译： 在集成电路中，通过使用穿孔掩模来调整掺杂剂浓度水平。 跨越集成电路的不同区域的掺杂水平可以通过利用面罩中的穿孔的不同尺寸和间距而不同地限定。 通过使用退火阶段完成掺杂剂的扩散。
-
公开(公告)号：US06958194B1
公开(公告)日：2005-10-25
申请号：US10689779
申请日：2003-10-21
申请人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
IPC分类号： B32B9/00 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14647 , Y10T428/12528 , Y10T428/12674
摘要： An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.
摘要翻译： 成像单元通过用夹在相同导电类型的硅层之间的导电类型的硅锗层形成低电阻横向路径来降低复合损耗并增加灵敏度。 硅锗层还提供了一个量子阱，光电子发现它难以逃逸，从而提供了减少串扰的屏障。
-
56.发明授权Semiconductor interconnect and method of providing interconnect using a contact region 有权半导体互连和使用接触区提供互连的方法公开(公告)号：US06864582B1
公开(公告)日：2005-03-08
申请号：US10284761
申请日：2002-10-31
IPC分类号： H01L23/485 , H01L29/72
CPC分类号： H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor structure, interconnects between regions of a single device or different devices are achieved by forming contacts or plugs in thick oxide holes that span across the regions to be interconnected.
摘要翻译： 在半导体结构中，单个器件或不同器件的区域之间的互连通过在跨越待互连的区域的厚氧化物孔中形成接触或插塞来实现。
-
57.发明授权公开(公告)号：US06855968B1
公开(公告)日：2005-02-15
申请号：US10356423
申请日：2003-01-30
IPC分类号： H01L27/148 , H01L31/0224 , H01L31/09
CPC分类号： H01L31/0224 , H01L31/08 , H01L31/09
摘要： A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed below of the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in magnetic flux of the inductor.
摘要翻译： 能够检测千兆赫兹光信号的光子检测器利用形成在电感线圈下方的光子材料层。 当脉冲光源被施加到光子材料层时，光子材料产生改变电感器的磁通量的涡流。 然后可以通过检测电感器的磁通量的变化来检测信号。
-
公开(公告)号：US06852562B1
公开(公告)日：2005-02-08
申请号：US10728612
申请日：2003-12-05
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/1462 , H01L27/14687
摘要： A color imager, which has a plurality of photodiodes, utilizes a layer of metal that is formed over the photodiodes. The metal layer has a plurality of different sized openings that lie vertically over the photodiodes to physically diffract, and thereby filter, the incident light that strikes the color imager.
摘要翻译： 具有多个光电二极管的彩色成像器利用形成在光电二极管上的金属层。 金属层具有多个不同尺寸的开口，其垂直地位于光电二极管上以物理衍射，从而过滤入射到彩色成像器的入射光。
-
59.发明授权公开(公告)号：US06844585B1
公开(公告)日：2005-01-18
申请号：US10173911
申请日：2002-06-17
IPC分类号： H01L21/265 , H01L21/8234 , H01L27/088 , H01L29/08 , H01L29/788
CPC分类号： H01L21/26586 , H01L21/2652 , H01L21/823418 , H01L27/088 , H01L29/0847
摘要： A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.
摘要翻译： 可以通过使用硬掩模并精确地改变植入角度，旋转，剂量和能量来形成MOS晶体管和地下收集器。 在这种情况下，特定的原子物质可以体积地放置在硬掩模下的所需位置。 可以将掺杂剂注入以形成任意形状的子硅体积，例如管道，体积，半球和互连。
-
60.发明申请Active pixel sensor cell with integrating varactor and method for using such cell 有权具有积分变容二极管的有源像素传感器单元和使用这种单元的方法公开(公告)号：US20050269482A1
公开(公告)日：2005-12-08
申请号：US10863058
申请日：2004-06-08
IPC分类号： H01L27/146 , H04N5/353 , H04N5/361 , H04N5/3745 , H01L27/00
CPC分类号： H01L27/14609 , H04N5/35572 , H04N5/361 , H04N5/37452
摘要： An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.
摘要翻译： 包括至少一个光电二极管和复位电路的有源像素传感器单元和耦合到光电二极管的积分变容二极管，用于读出这样的单元的方法以及包括这种单元阵列的图像传感器。 在曝光间隔期间，可以将光电二极管暴露于光子，以在光电二极管的第一节点处累积次曝光电荷序列。 在曝光间隔的不同子曝光间隔期间，每个次曝光电荷在第一节点处累积。 在每个复位间隔的每一个期间复位光电二极管，每个复位间隔发生在不同的次曝光间隔之前。 指示在曝光间隔期间在存储节点处累积的曝光电荷的输出信号可以从单元断言，其中曝光电荷指示所有次曝光电荷的总和。
-
-
-
-
-
-
-
-
-
搜索结果
68 条记录 (耗时 0.02 秒)
