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公开(公告)号:US11317510B2
公开(公告)日:2022-04-26
申请号:US17072775
申请日:2020-10-16
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Suresh Rajan
IPC: G11C7/10 , H05K1/11 , G11C11/4093 , H05K1/18 , G06F15/78 , G11C11/408 , G06F1/18 , G11C5/04 , G11C5/06 , G06F13/16 , G06F13/40
Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.
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52.
公开(公告)号:US11243897B2
公开(公告)日:2022-02-08
申请号:US16862916
申请日:2020-04-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Abhijit Abhyankar , Suresh Rajan
Abstract: A memory controller and buffers on memory modules each operate in two modes, depending on the type of motherboard through which the controller and modules are connected. In a first mode, the controller transmits decoded chip-select signals independently to each module, and the motherboard data channel uses multi-drop connections to each module. In a second mode, the motherboard has point-to-point data channel and command address connections to each of the memory modules, and the controller transmits a fully encoded chip-select signal group to each module. The buffers operate modally to correctly select ranks or partial ranks of memory devices on one or more modules for each transaction, depending on the mode.
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公开(公告)号:US20210383857A1
公开(公告)日:2021-12-09
申请号:US17334170
申请日:2021-05-28
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Suresh Rajan , Scott C. Best
IPC: G11C11/408 , G11C5/04 , G11C11/4093 , G06F12/06 , G06F13/16 , G11C7/10
Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.
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公开(公告)号:US20210335437A1
公开(公告)日:2021-10-28
申请号:US17245491
申请日:2021-04-30
Applicant: Rambus Inc.
Inventor: Ely Tsern , Frederick A. Ware , Suresh Rajan , Thomas Vogelsang
Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
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公开(公告)号:US11011248B2
公开(公告)日:2021-05-18
申请号:US16690743
申请日:2019-11-21
Applicant: Rambus Inc.
Inventor: Ely Tsern , Frederick A Ware , Suresh Rajan , Thomas Vogelsang
Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
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公开(公告)号:US10831685B2
公开(公告)日:2020-11-10
申请号:US16546694
申请日:2019-08-21
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
IPC: G06F13/16 , G11C7/10 , G11C8/18 , G11C11/419 , G11C7/22 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C5/02 , G06F13/40 , G11C29/02
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
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公开(公告)号:US10678459B2
公开(公告)日:2020-06-09
申请号:US15745396
申请日:2016-07-14
Applicant: Rambus Inc.
Inventor: Suresh Rajan , Abhijit M. Abhyankar , Ravindranath Kollipara , David A. Secker
Abstract: Described are memory modules that include address-buffer components and data-buffer components that together support wide- and narrow-data modes. The address-buffer component manages communication between a memory controller and two sets of memory components. In the wide-data mode, the address-buffer enables memory components in each set and instructs the data-buffer components to communicate full-width read and write data by combining data from or to from both sets for each memory access. In the narrow-data mode, the address-buffer enables memory components in just one of the two sets and instructs the data-buffer components to half-width read and write data with one set per memory access.
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公开(公告)号:US10402352B2
公开(公告)日:2019-09-03
申请号:US15333001
申请日:2016-10-24
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
IPC: G06F13/00 , G06F13/16 , G11C7/10 , G11C8/18 , G11C11/419 , G11C7/22 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C5/02 , G06F13/40 , G11C29/02
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
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公开(公告)号:US20180139843A1
公开(公告)日:2018-05-17
申请号:US15814180
申请日:2017-11-15
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Suresh Rajan
IPC: H05K1/11 , G06F13/40 , G11C11/4093 , G11C11/408 , G06F13/16 , G06F1/18 , G06F15/78 , H05K1/18 , G11C5/06 , G11C5/04 , G11C7/10
CPC classification number: H05K1/11 , G06F1/184 , G06F13/1694 , G06F13/4068 , G06F15/7803 , G11C5/04 , G11C5/06 , G11C7/10 , G11C11/4082 , G11C11/4093 , H05K1/181 , H05K2201/10159 , H05K2201/10189
Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.
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公开(公告)号:US09837132B2
公开(公告)日:2017-12-05
申请号:US15024454
申请日:2014-09-24
Applicant: RAMBUS INC.
Inventor: Frederick A. Ware , Suresh Rajan
CPC classification number: G11C7/1063 , G11C5/04 , G11C5/063 , G11C7/10 , G11C7/1072 , G11C29/025 , G11C29/028
Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory module includes multiple device sites coupled to the a data query (DQ) buffer component via data lines and coupled to a command and address (CA) buffer component via chip select (CS) lines. A first number of the CS lines between the CA buffer component and any combination of two or more of the multiple device sites is greater than a second number of the CS lines between the CA buffer component and a single one of the multiple device sites.
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