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    An apparatus that enables low cost installation of a secure and tamper proof assembly that accommodates lifeline support for power line communication devices.
    51.
    发明申请
    An apparatus that enables low cost installation of a secure and tamper proof assembly that accommodates lifeline support for power line communication devices. 失效
    一种能够低成本安装安全和防篡改组件的装置，其容纳电力线通信装置的救生索支持。

    公开(公告)号：US20050200284A1

    公开(公告)日：2005-09-15

    申请号：US10906864

    申请日：2005-03-09

    申请人： Scott Thompson ,  Bernt Askildsen

    发明人： Scott Thompson ,  Bernt Askildsen

    IPC分类号： H01K1/62

    CPC分类号： H01K1/62 ,  H01R24/76 ,  H01R2103/00

    摘要： A novel apparatus is disclosed that provides a secure, tamperproof, and cordless installation to securely and reliably couple any electronic device directly onto any standard power outlet. The installation is easy, certification free, and does not need to reduce the number of available power outlets. The apparatus also enables reliable and effective signal coupling for power line control and communication devices including X.10, HomePlug, and other proprietary power line based physical layers. For these types of systems the apparatus may provide life line support using a battery or any other form of energy storage. The device is optimally installed directly onto a standard wall outlet by replacing the current face plug with a housing that can be affixed directly onto the duplex outlet with screws that attach to any existing threaded hole used by conventional or other mounting devices within a wall box.

    摘要翻译： 公开了一种新颖的装置，其提供安全，防篡改和无绳安装，以将任何电子设备可靠地和可靠地连接到任何标准电源插座上。 安装简单，免认证，不需要减少可用电源插座的数量。 该设备还为电力线控制和通信设备（包括X.10，HomePlug和其他专有的基于电力线的物理层）提供可靠和有效的信号耦合。 对于这些类型的系统，该装置可以使用电池或任何其他形式的能量存储提供寿命线支持。 将设备最佳地直接安装在标准的墙上插座上，用一个可以直接固定在双面插座上的外壳替换当前的面部插头，该螺钉可以连接到墙上的常规或其他安装设备所使用的现有螺纹孔。

    Nitrogen controlled growth of dislocation loop in stress enhanced transistor
    53.
    发明申请
    Nitrogen controlled growth of dislocation loop in stress enhanced transistor 失效
    应力增强晶体管中位错环的氮控制生长

    公开(公告)号：US20050014351A1

    公开(公告)日：2005-01-20

    申请号：US10918818

    申请日：2004-08-12

    申请人： Cory Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul Packan ,  Scott Thompson

    发明人： Cory Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul Packan ,  Scott Thompson

    IPC分类号： H01L21/265 ,  H01L21/8238 ,  H01L29/78 ,  H01L21/425

    CPC分类号： H01L21/26506 ,  H01L21/823807 ,  H01L29/7833 ,  H01L29/7842

    摘要： Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

    摘要翻译： 改进金属氧化物半导体场效应晶体管（MOSFET）性能的已知技术是向MOSFET增加高应力电介质层。 高应力电介质层在MOSFET中引入应力，导致电子迁移率驱动电流增加。 然而，这种技术提高了工艺复杂度，并且可能降低PMOS性能。 本发明的实施例在MOSFET衬底中产生位错环以在衬底中引入应力和注入氮以控制位错环的生长，使得应力保持在MOSFET的沟道下方。

    Low damage doping technique for self-aligned source and drain regions
    54.
    发明授权
    Low damage doping technique for self-aligned source and drain regions 失效
    用于自对准源极和漏极区域的低损耗掺杂技术

    公开(公告)号：US5976939A

    公开(公告)日：1999-11-02

    申请号：US498028

    申请日：1995-07-03

    申请人： Scott Thompson ,  Mark T. Bohr ,  Paul A. Packan

    发明人： Scott Thompson ,  Mark T. Bohr ,  Paul A. Packan

    IPC分类号： H01L21/225 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092

    CPC分类号： H01L29/6659 ,  H01L21/2257 ,  H01L21/823814 ,  H01L29/6656

    摘要： A process for fabricating a source and drain region which includes a more lightly doped source and drain tip region immediately adjacent to the gate and a more heavily doped main portion of the source and drain region spaced apart from the gate. A first layer of glass (2% BSG) is used to provide the source of doping for the tip region and a second layer of glass (6% BSG) is used to provide the dopant for the more heavily doped major portion of source and drain regions. Spacers are formed between the glass layers to define the tip region from the main portion of the source and drain regions.

    摘要翻译： 一种用于制造源极和漏极区的工艺，其包括与栅极紧邻的更轻掺杂的源极和漏极尖端区域以及与栅极间隔开的源极和漏极区域的更重掺杂的主要部分。 使用第一层玻璃（2％BSG）为尖端区域提供掺杂源，并且使用第二层玻璃（6％BSG）为源和漏极的更重掺杂的主要部分提供掺杂剂 地区。 间隔件形成在玻璃层之间，以限定源区和漏区的主要部分的尖端区域。

    Low speed synchronous motor drive operation
    57.
    发明授权
    Low speed synchronous motor drive operation 有权
    低速同步电机驱动运行

    公开(公告)号：US07880416B2

    公开(公告)日：2011-02-01

    申请号：US11856504

    申请日：2007-09-17

    申请人： Steven E. Schulz ,  Goro Tamai ,  Scott Thompson

    发明人： Steven E. Schulz ,  Goro Tamai ,  Scott Thompson

    IPC分类号： H02P6/08

    CPC分类号： H02P6/08 ,  H02P23/03 ,  H02P2209/07

    摘要： Methods and apparatus are provided for providing a torque boost in an electric motor system at low speeds. The electric motor system comprises an alternating current (AC) synchronous electric motor, an inverter and a controller. The inverter is coupled to the AC synchronous electric motor and provides electric control therefore. The controller is coupled to the inverter and provides operational control signals thereto for operation of the electric motor. The controller includes a torque command gain block which modifies a torque command to generate a boosted torque signal in response to a detected speed of the electric motor, the torque command modified to define the boosted torque signal defined in accordance with a torque dependent scaling factor calculated in response to the torque command.

    摘要翻译： 提供了用于在电动机系统中以低速提供转矩提升的方法和装置。 电动机系统包括交流（AC）同步电动机，逆变器和控制器。 逆变器耦合到交流同步电动机，因此提供电力控制。 控制器耦合到逆变器，并提供用于电动机的操作的操作控制信号。 所述控制器包括转矩指令增益块，所述转矩指令增益块根据所述电动机的检测速度修正转矩指令以产生升压转矩信号，所述转矩指令被修改以限定根据所计算出的与转矩相关的标度因子所定义的升压转矩信号 响应扭矩指令。

    TENSIONING DEVICE FOR A TRACTION MECHANISM DRIVE
    58.
    发明申请
    TENSIONING DEVICE FOR A TRACTION MECHANISM DRIVE 审中-公开
    牵引机构牵引装置

    公开(公告)号：US20080119311A1

    公开(公告)日：2008-05-22

    申请号：US11943709

    申请日：2007-11-21

    申请人： Manfred Wilhelm ,  Horst Adel ,  Scott Ribey ,  Fred Seebeck ,  Scott Thompson

    发明人： Manfred Wilhelm ,  Horst Adel ,  Scott Ribey ,  Fred Seebeck ,  Scott Thompson

    IPC分类号： F16H7/12

    CPC分类号： F16H7/1218 ,  F16H2007/081

    摘要： Tensioning device (1) for a traction mechanism drive, such as a belt or a chain drive, with a tensioning arm (4), which can pivot about a pivot axle (3) relative to a body (2) and on whose distal end there is a roller (5) supported so that it can rotate for tensioning the traction mechanism, for the purpose of which there is a torsion spring (6) acting between the pivot axle (3) of the tensioning arm (4) and the body (2). The pivot axle (3) is supported in a sliding manner by at least one radial bearing arrangement (7) and at least one axial bearing arrangement (8) separated from this radial bearing arrangement, and the axial bearing (8) is constructed as a cone friction bearing and includes a cone bearing disk (9), which is locked in rotation with the pivot axle (3) and is guided subjected to friction on the end against a cone bearing surface (10) formed in the hub section of the tensioning arm (4).

    摘要翻译： 用于牵引机构驱动的张紧装置（1），例如带或链条驱动装置，具有张紧臂（4），其可相对于主体（2）围绕枢转轴（3）枢转，并且其远端 有一个支撑的滚轮（5），以便它可以转动以张紧牵引机构，为此目的是在张力臂（4）的枢转轴（3）和主体 （2）。 枢转轴（3）通过至少一个径向轴承装置（7）和与该径向轴承装置分离的至少一个轴向轴承装置（8）滑动地支撑，并且轴向轴承（8）被构造为 锥形摩擦轴承，并包括锥形轴承盘（9），该圆锥轴承盘（9）与枢转轴（3）锁定在一起旋转，并被引导抵靠在形成在张紧轮毂部分中的锥形轴承表面（10） 手臂（4）。

    Nitrogen controlled growth of dislocation loop in stress enhanced transistor
    60.
    发明授权
    Nitrogen controlled growth of dislocation loop in stress enhanced transistor 有权
    应力增强晶体管中位错环的氮控制生长

    公开(公告)号：US07226824B2

    公开(公告)日：2007-06-05

    申请号：US10918818

    申请日：2004-08-13

    申请人： Cory E. Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul A. Packan ,  Scott Thompson

    发明人： Cory E. Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul A. Packan ,  Scott Thompson

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7842 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/7833

    摘要： Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

    摘要翻译： 改进金属氧化物半导体场效应晶体管（MOSFET）性能的已知技术是向MOSFET增加高应力电介质层。 高应力电介质层在MOSFET中引入应力，导致电子迁移率驱动电流增加。 然而，这种技术提高了工艺复杂度，并且可能降低PMOS性能。 本发明的实施例在MOSFET衬底中产生位错环以在衬底中引入应力和注入氮以控制位错环的生长，使得应力保持在MOSFET的沟道下方。