摘要:
A method of securing a prosthesis placed at a desired site in a passageway of a human body comprises delivering a fastener having a proximal piercing end portion and a distal piercing end portion to a site where a prosthesis having a tubular wall has been placed in the passageway, which has a wall, advancing the proximal piercing end portion beyond the prosthesis, penetrating the proximal piercing end portion into the wall of the passageway without passing the proximal piercing end portion through the tubular wall of the prosthesis, and passing the distal piercing end portion through the tubular wall of the prosthesis and into the wall of the passageway. One surgical fastener delivery apparatus for delivering a surgical fastener to a target site comprises a support having a first end, a second end, and a longitudinal axis and being adapted for placement in a passageway in a human body. A surgical fastener having a first piercing end portion, a second piercing end portion and a central portion extending therebetween and having a longitudinal axis is releasably mounted to the support with the central portion longitudinal axis generally parallel to the support longitudinal axis.
摘要:
The invention provides a method of providing an endovascular bypass. The method includes the steps of inserting an elastic needle carrying a guidewire adjacent an ostium via a catheter and extending the needle through a branch vessel wall. The method continues by extending the needle through the extravascular space and inserting the needle through a main vessel wall to create an opening. The needle is retracted, leaving the guidewire in place. A bypass stent graft is inserted along the guidewire to provide a pathway between the branch vessel and the main vessel, and the inserted bypass stent graft is expanded. The branch vessel is occluded between the ostium of the bypass stent graft and the main vessel, and a main stent graft is inserted in the main vessel proximate the opening in the main vessel wall.
摘要:
A stent graft includes at least one aperture extending through the main body thereof, into which an extension portion may be deployed for positioning within an adjacent branch flow lumen. The extension portions include self biasing features, wherein the extension is biased into engagement with the main body to seal the interface thereof. Additionally, the extension portion may be configured for tortuous or deviated anatomy, to enable sealing of the extension portion with the body while extending the extension portion in a substantially non-radial direction from the main body.
摘要:
In a client-server system where a client system presents a browser for user interaction, a browser user interface includes functionality for handling dynamic interface elements received by the browser in connection with received pages, presented as part of the browser user interface and modified in response to selected user input without requiring further interaction with a server. In addition to, or in place of, dynamic interface elements such as slide sheets, the browser user interface might also include a rotation display area, tool displays that can overlay a page, opaquely or semi-transparently, menu structures, and an ability for the user to modify a page layout without requiring server interaction. The browser might comprise storage for a plurality of rotation display items for storing a summary and a primary presentation for each rotation display item, logic for displaying, by the browser, primary presentations for less all of the plurality of rotation display items in the rotation display area, logic for displaying, by the browser, summaries for items wherein the number of summaries is greater than the number of primary presentations presented at one time, logic for highlighting, among the summaries displayed, the ones of the summaries that correspond to the primary presentations displayed in the rotation display area; and logic for rotating the plurality of rotation display items to display primary presentations for a different subsets of the rotation display items and for updating highlighting of summaries to correspond to the different subsets of rotation display items.
摘要:
Treatment of aneurysmal blood vessels with local delivery of therapeutic agents thereby reduces or lessens the severity of an aneurysm, and, where used in conjunction with the placement of an excluding device, provides for more rapid recovery of the blood vessel from any disturbance occurring during placement of the excluding device. Therapeutic agents are placed in the aneurysmal site in a time-release carrier medium, such that the therapeutic agent is released into the aneurysmal site over a period of time without the need to provide systemic introduction of the therapeutic agent. The carrier may be introduced through the patient's dermis, such as with the use of a laparoscope, or intravascularly, through the use of a catheter. The carrier may be in a solid matrix, viscous liquid or liquid form.
摘要:
Methods for ameliorating stent graft migration and endoleak using treatment site-specific platelet gel compositions in combination with stent grafts are disclosed. Also disclosed are platelet gel compositions directly to treatment sites before, during or after stent graft implantation. Additional embodiments include medical devices having platelet gel coatings and/or platelet gel delivery devices useful for treating aneurysms.
摘要:
Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.
摘要:
MOSFET devices suitable for operation at gate lengths less than about 40 nm, and methods of their fabrication is being presented. The MOSFET devices include a ground plane formed of a monocrystalline Si based material. A Si based body layer is epitaxially disposed over the ground plane. The body layer is doped with impurities of opposite type than the ground plane. The gate has a metal with a mid-gap workfunction directly contacting a gate insulator layer. The gate is patterned to a length of less than about 40 nm, and possibly less than 20 nm. The source and the drain of the MOSFET are doped with the same type of dopant as the body layer. In CMOS embodiments of the invention the metal in the gate of the NMOS and the PMOS devices may be the same metal.
摘要:
A method of securing a prosthesis placed at a desired site in a passageway of a human body comprises delivering a fastener having a proximal piercing end portion and a distal piercing end portion to a site where a prosthesis having a tubular wall has been placed in the passageway, which has a wall, advancing the proximal piercing end portion beyond the prosthesis, penetrating the proximal piercing end portion into the wall of the passageway without passing the proximal piercing end portion through the tubular wall of the prosthesis, and passing the distal piercing end portion through the tubular wall of the prosthesis and into the wall of the passageway. One surgical fastener delivery apparatus for delivering a surgical fastener to a target site comprises a support having a first end, a second end, and a longitudinal axis and being adapted for placement in a passageway in a human body. A surgical fastener having a first piercing end portion, a second piercing end portion and a central portion extending therebetween and having a longitudinal axis is releasably mounted to the support with the central portion longitudinal axis generally parallel to the support longitudinal axis.
摘要:
A structure and method of fabrication for PFET devices in a compressively strained Ge layer is disclosed. The fabrication method of such devices is compatible with standard CMOS technology and it is fully scalable. The processing includes selective epitaxial depositions of an over 50% Ge content buffer layer, a pure Ge layer, and a SiGe top layer. Fabricated buried channel PMOS devices hosted in the compressively strained Ge layer show superior device characteristics relative to similar Si devices.