公开(公告)号：US20240222510A1

公开(公告)日：2024-07-04

申请号：US18600901

申请日：2024-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/12 ,  H01L27/146 ,  H01L27/15 ,  H01L29/66 ,  H10K59/121 ,  H10K59/124

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/66742 ,  H01L29/7869 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/14612 ,  H01L27/15 ,  H10K59/1213 ,  H10K59/124

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20230387276A1

公开(公告)日：2023-11-30

申请号：US18214623

申请日：2023-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L29/78696 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/42356 ,  H01L29/24 ,  H01L29/78618 ,  H01L27/124

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US20230268348A1

公开(公告)日：2023-08-24

申请号：US18113188

申请日：2023-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G09G3/20 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L27/1248 ,  G09G3/20 ,  H01L29/78693 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20220139967A1

公开(公告)日：2022-05-05

申请号：US17573792

申请日：2022-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20210343877A1

公开(公告)日：2021-11-04

申请号：US17373879

申请日：2021-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

公开(公告)号：US20210057582A1

公开(公告)日：2021-02-25

申请号：US16897586

申请日：2020-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/146

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20200286928A1

公开(公告)日：2020-09-10

申请号：US16879853

申请日：2020-05-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20190172849A1

公开(公告)日：2019-06-06

申请号：US16270079

申请日：2019-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20190115455A1

公开(公告)日：2019-04-18

申请号：US16209023

申请日：2018-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/786 ,  H01L21/425 ,  H01L21/02 ,  H01L29/423 ,  H01L21/477

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

公开(公告)号：US20190088793A1

公开(公告)日：2019-03-21

申请号：US16191609

申请日：2018-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.