LIGHT EMITTING DIODE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20220392879A1

    公开(公告)日:2022-12-08

    申请号:US17844653

    申请日:2022-06-20

    Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

    Light emitting device
    58.
    发明授权

    公开(公告)号:US10886447B2

    公开(公告)日:2021-01-05

    申请号:US16561440

    申请日:2019-09-05

    Abstract: A light emitting device including a first light emitting part including a first ohmic layer, a second light emitting part and including a second ohmic layer, a third light emitting part including first and second metal patterns respectively contacting semiconductor layers thereof, a first pad electrically coupled with the first ohmic layer, a second pad electrically coupled with the second ohmic layer, a third pad electrically coupled with the first metal pattern, a common pad electrically coupled with a semiconductor layer of the first and second light emitting parts and the second metal pattern, and a via structure electrically coupling the second metal pattern and the common pad between the second metal pattern and the common pad, in which the second metal pattern has a first portion contacting the first via structure and a second portion contacting the semiconductor layer of the third light emitting part.

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