公开(公告)号：US20200294565A1

公开(公告)日：2020-09-17

申请号：US16539775

申请日：2019-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Sebastian Schafer

IPC: G11C11/16 ,  G11C11/15

Abstract: A memory system includes a memory track including a plurality of magnetic domains having alternating magnetic polarities and positioned along a path, and a plurality of domain walls separating adjacent ones of the plurality of magnetic domains, each one of the domain walls being configured to store data.

公开(公告)号：US10381550B1

公开(公告)日：2019-08-13

申请号：US15968471

申请日：2018-05-01

Applicant: Samsung Electronics Co., LTD.

Inventor： Zheng Duan ,  Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.

公开(公告)号：US10297300B2

公开(公告)日：2019-05-21

申请号：US14854251

申请日：2015-09-15

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Robert Beach ,  Zheng Duan

IPC: G11C29/00 ,  G01K13/00 ,  G11C11/16 ,  G01R33/14 ,  G11C7/04 ,  G11C29/50 ,  G01R33/09 ,  G01K7/36

Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.

公开(公告)号：US10276225B2

公开(公告)日：2019-04-30

申请号：US15903926

申请日：2018-02-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Dmytro Apalkov ,  Gen Feng ,  Mohamad Towfik Krounbi

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

公开(公告)号：US10274571B2

公开(公告)日：2019-04-30

申请号：US15478226

申请日：2017-04-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Robert Beach ,  Dmytro Apalkov ,  Volodymyr Voznyuk ,  Ilya Krivorotov ,  Chengcen Sha

IPC: G01R33/60 ,  H01L27/22 ,  H01L43/08 ,  G11C11/02 ,  H01L43/12 ,  G01N24/10 ,  G11C29/02 ,  G11C29/24 ,  G11C29/50 ,  G11C11/16

Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.

公开(公告)号：US20180294024A1

公开(公告)日：2018-10-11

申请号：US16005595

申请日：2018-06-11

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Robert Beach ,  Zheng Duan

IPC: G11C11/16 ,  G11C7/04 ,  G11C29/50 ,  G01K7/36 ,  G01R33/14 ,  G01R33/09 ,  G01K13/00

CPC classification number: G11C11/161 ,  G01K7/36 ,  G01R33/098 ,  G01R33/14 ,  G11C7/04 ,  G11C11/16 ,  G11C11/1695 ,  G11C29/50 ,  G11C2029/5002

Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.

公开(公告)号：US20180269384A1

公开(公告)日：2018-09-20

申请号：US15976844

申请日：2018-05-10

Applicant: Samsung Electronics Co., LTD.

Inventor： Shuxia Wang ,  Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L27/226 ,  G11C11/161 ,  G11C11/165 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the free layer physical length and less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.

公开(公告)号：US20180205001A1

公开(公告)日：2018-07-19

申请号：US15478226

申请日：2017-04-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Robert Beach ,  Dmytro Apalkov ,  Volodymyr Voznyuk ,  Ilya Krivorotov ,  Chengcen Sha

IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G01R33/60

CPC classification number: G01R33/60 ,  G01N24/10 ,  G11C11/02 ,  G11C11/1675 ,  G11C29/021 ,  G11C29/028 ,  G11C29/24 ,  G11C29/50008 ,  G11C2029/5006 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.

公开(公告)号：US20180108833A1

公开(公告)日：2018-04-19

申请号：US15373396

申请日：2016-12-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Roman Chepulskyy ,  Dmytro Apalkov

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a free layer, providing a pinned layer and providing a nonmagnetic spacer between the free and pinned layers. The free layer is switchable between stable magnetic states using a write current passed through the magnetic junction. At least one of the step of providing the free layer and the step of providing the pinned layer includes depositing a magnetic layer; depositing an adsorber layer on the magnetic layer and performing at least one anneal. The magnetic layer is amorphous as-deposited and includes an interstitial glass-promoting component. The adsorber layer attracts the interstitial glass-promoting component and has a lattice mismatch with the nonmagnetic spacer layer of not more than ten percent. Each of the anneal(s) is at a temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius.

公开(公告)号：US20170263859A1

公开(公告)日：2017-09-14

申请号：US15177138

申请日：2016-06-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Dmytro Apalkov ,  Gen Feng ,  Mohamad Towfik Krounbi

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy. The pinned layer includes a high perpendicular magnetic anisotropy (PMA) layer including at least one nonmagnetic component, a magnetic layer and a magnetic barrier layer between the high PMA layer and the magnetic layer. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component of the high PMA layer.