公开(公告)号：US11482686B2

公开(公告)日：2022-10-25

申请号：US17085167

申请日：2020-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Moon Gyu Han ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L29/06 ,  H01L51/50 ,  H01L51/56 ,  C09K11/02 ,  C09K11/88 ,  B82Y40/00 ,  B82Y20/00

Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

公开(公告)号：US11060019B2

公开(公告)日：2021-07-13

申请号：US16158483

申请日：2018-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwook Kim ,  Eun Joo Jang ,  Tae Gon Kim ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Young-soo Jeong

IPC: C09K11/65 ,  C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/88 ,  C09K11/08 ,  G02F1/1335 ,  G02F1/13357 ,  H01L27/32

Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.

公开(公告)号：US10975298B2

公开(公告)日：2021-04-13

申请号：US16817902

申请日：2020-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Yuho Won ,  Sungwoo Hwang ,  Ji Yeong Kim ,  Eun Joo Jang

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/13357

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US10808174B2

公开(公告)日：2020-10-20

申请号：US15855436

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Young Seok Park ,  Shang Hyeun Park ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Dae Young Chung ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/00 ,  G02B5/22 ,  H01L27/32 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.

公开(公告)号：US10739634B2

公开(公告)日：2020-08-11

申请号：US15670399

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun A Kang ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun

IPC: G02F1/1335 ,  C09D123/08 ,  C09K11/02 ,  G02F1/13357 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  C08K9/08

Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

公开(公告)号：US10717649B2

公开(公告)日：2020-07-21

申请号：US16117394

申请日：2018-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Shin Ae Jun ,  Eun Joo Jang

IPC: C09K11/00 ,  C09K11/08 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  B82Y30/00

Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy  [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.

公开(公告)号：US09334440B2

公开(公告)日：2016-05-10

申请号：US13904724

申请日：2013-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Joo Jang ,  Hyo Sook Jang ,  Won Joo Lee

IPC: C09K11/02 ,  B82B3/00 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/025 ,  B82B3/00 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/70 ,  C09K11/883 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/95

Abstract: A process of synthesizing nanocrystals, the process including contacting a first precursor, a ligand compound, and a second precursor in a solvent having a boiling point of less than or equal to about 150° C. and a polarity index of less than or equal to 5, and performing a thermal decomposition reaction between the first precursor and the second precursor at a higher pressure than atmospheric pressure and at a higher temperature than a boiling point of the solvent, wherein at least one of the first precursor and the second precursor is a metal-containing precursor.

Abstract translation: 一种合成纳米晶体的方法，该方法包括使第一前体，配体化合物和第二前体在沸点小于或等于约150℃的溶剂中和极性指数小于或等于 5，并且在比大气压更高的压力和比溶剂的沸点更高的温度下，在第一前体和第二前体之间进行热分解反应，其中第一前体和第二前体中的至少一个是 含金属的前体。

公开(公告)号：US09284484B2

公开(公告)日：2016-03-15

申请号：US14296658

申请日：2014-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Eun Joo Jang ,  Shin Ae Jun

IPC: C09K11/02 ,  C09K11/62 ,  B82Y40/00 ,  C30B29/60 ,  C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C09K11/08 ,  C09K11/56

CPC classification number: C09K11/02 ,  B82Y40/00 ,  C09K11/0805 ,  C09K11/0811 ,  C09K11/56 ,  C09K11/62 ,  C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/60 ,  Y02P20/542

Abstract: A process of synthesizing nanocrystals, the process including: obtaining a metal precursor, a non-metal precursor, a ligand compound, and an ionic liquid; and contacting the metal precursor, the non-metal precursor, the ligand compound, and the ionic liquid to form a mixture and synthesize a first semiconductor nanocrystal.

Abstract translation: 一种合成纳米晶体的方法，该方法包括：获得金属前体，非金属前体，配体化合物和离子液体; 并使金属前体，非金属前体，配体化合物和离子液体接触以形成混合物并合成第一半导体纳米晶体。

公开(公告)号：US09082982B2

公开(公告)日：2015-07-14

申请号：US13656327

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin Ae Jun ,  Hyun A Kang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Hyo Sook Jang

IPC: H01L29/08 ,  H01L51/00 ,  C09K11/02 ,  C09K11/56 ,  H01L33/50 ,  C09K11/88 ,  C01B17/20 ,  C01B19/00 ,  B82Y30/00 ,  H01L51/50

CPC classification number: H01L51/0043 ,  B82Y30/00 ,  C01B17/20 ,  C01B19/007 ,  C01P2002/88 ,  C01P2004/64 ,  C01P2004/84 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/501 ,  H01L33/502 ,  H01L33/507 ,  H01L51/004 ,  H01L51/50 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO−) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.

Abstract translation: 包括半导体纳米晶体的半导体纳米晶体 - 聚合物复合物，包含可与半导体纳米晶体的表面结合的多个羧酸根阴离子基团（-COO-）的聚合物和可结合多个羧酸根阴离子的羧酸根阴离子基团的金属阳离子 团体

公开(公告)号：US12225746B2

公开(公告)日：2025-02-11

申请号：US17515652

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Eun Joo Jang ,  Ilyoung Lee ,  Tae Ho Kim ,  Kun Su Park ,  Jun-Mo Yoo

IPC: H10K50/115 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/88 ,  H10K85/30

Abstract: A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.