Semiconductor package
    52.
    发明授权

    公开(公告)号:US11837551B2

    公开(公告)日:2023-12-05

    申请号:US17215517

    申请日:2021-03-29

    CPC classification number: H01L23/5384 H01L23/5386 H01L24/14

    Abstract: A semiconductor package includes a redistribution substrate having a semiconductor chip mounted on a top surface thereof with and a connection terminal between the semiconductor chip and the redistribution substrate. The redistribution substrate includes a first redistribution pattern on a bottom surface of the connection terminal and comprising a first via and a first interconnection on the first via, a pad pattern between the first redistribution pattern and the connection terminal and comprising a pad via and a pad on the pad via, and a second redistribution pattern between the first redistribution pattern and the pad pattern and comprising a second via and a second interconnection on the second via with a recess region where a portion of a top surface of the second interconnection is recessed. A bottom surface of the recess region is located at a lower level than a topmost surface of the second interconnection.

    Semiconductor package and method of fabricating the same

    公开(公告)号:US11626393B2

    公开(公告)日:2023-04-11

    申请号:US17179470

    申请日:2021-02-19

    Abstract: A method of fabricating a semiconductor package includes providing a semiconductor chip, forming a redistribution substrate, and fabricating a package including the semiconductor chip disposed on the redistribution substrate. The forming of the redistribution substrate may include forming a first insulating layer on a substrate, the first insulating layer having a first opening formed therein, forming an integrally formed first redistribution pattern in the first opening and on the first insulating layer, forming a second insulating layer on the first insulating layer to cover the first redistribution pattern, and performing a planarization process on the second insulating layer to expose the first redistribution pattern.

    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230056041A1

    公开(公告)日:2023-02-23

    申请号:US17706978

    申请日:2022-03-29

    Abstract: A semiconductor package includes: a base substrate including a lower redistribution layer; a lower semiconductor chip including a first active surface and on the base substrate; an upper semiconductor chip including a second active surface on the lower semiconductor chip and having an area larger than that of the lower semiconductor chip; an intermediate connection member including an upper redistribution layer on the second active surface of the upper semiconductor chip between the lower and upper semiconductor chips; a plurality of vertical interconnectors disposed around the lower semiconductor chip on the base substrate and connecting the lower redistribution layer and the upper redistribution layer; and a molding portion on the base substrate and including a first portion surrounding the lower semiconductor chip and the vertical interconnectors, and a second portion extending upwardly from the first portion and on side surfaces of the upper semiconductor chip and the intermediate connection member.

    VIDEO DECODING APPARATUS AND VIDEO DECODING METHOD

    公开(公告)号:US20220224927A1

    公开(公告)日:2022-07-14

    申请号:US17575414

    申请日:2022-01-13

    Abstract: A video decoding apparatus includes a first buffer storing input data received from an entropy decoder, a first motion compensation processor extracting motion compensation reference data based on the input data, and store the motion compensation reference data in a pixel cache, a second buffer, and a controller. The input data comprises one of first data including motion information and second data including intra prediction information. The controller controls the second buffer to store the motion compensation reference data stored in the pixel cache when the input data is the first data, and controls the second buffer to store the second data stored in the first buffer when the input data is the second data.

    SEMICONDUCTOR PACKAGE
    57.
    发明申请

    公开(公告)号:US20220077048A1

    公开(公告)日:2022-03-10

    申请号:US17329256

    申请日:2021-05-25

    Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

    Method of fabricating semiconductor package

    公开(公告)号:US11018108B2

    公开(公告)日:2021-05-25

    申请号:US16914384

    申请日:2020-06-28

    Abstract: A semiconductor package includes: a redistribution substrate; a semiconductor chip on the redistribution substrate; and an external terminal on a bottom surface of the redistribution substrate, wherein the redistribution substrate comprises: a first insulating layer including a first opening; a second insulating layer on the first insulating layer and including a second opening, wherein the second opening is positioned in the first opening in a plan view; a first barrier metal layer disposed along a sidewall of the first opening and along a sidewall of the second opening; a first redistribution conductive pattern on the first barrier metal layer; a third insulating layer on a bottom surface of the first insulating layer; and a pad penetrating the third insulating layer and electrically connecting to the first redistribution conductive pattern, wherein the external terminal is provided on the pad, wherein the second insulating layer at least partially covers a chip pad of the semiconductor chip, and the second opening at least partially exposes the chip pad, wherein, inside the second insulating layer, the first barrier metal layer is in contact with the chip pad through the second opening, and wherein the first redistribution conductive pattern has a surface roughness including protrusions extending in a range of from about 0.01 μm to about 0.5 μm, and the first insulating layer has a surface roughness smaller than the surface roughness of the first redistribution conductive pattern.

    DISPLAY MODULE PACKAGE
    59.
    发明申请

    公开(公告)号:US20210066560A1

    公开(公告)日:2021-03-04

    申请号:US16860255

    申请日:2020-04-28

    Abstract: A display module package includes a semiconductor chip, a wiring member disposed on the semiconductor chip, including an insulating layer and a wiring layer, and contacting at least a portion of the semiconductor chip, a light emitting device array disposed on the wiring member and including a plurality of light emitting devices disposed on one surface, wherein the wiring member is between the semiconductor chip and the light emitting device, and a molding member disposed on the wiring member, sealing part of the light emitting device array, and having an opening for exposing the plurality of light emitting devices.

    Semiconductor package and method of fabricating the same

    公开(公告)号:US10930625B2

    公开(公告)日:2021-02-23

    申请号:US16430426

    申请日:2019-06-04

    Abstract: A method of fabricating a semiconductor package includes providing a semiconductor chip, forming a redistribution substrate, and fabricating a package including the semiconductor chip disposed on the redistribution substrate. The forming of the redistribution substrate may include forming a first insulating layer on a substrate, the first insulating layer having a first opening formed therein, forming an integrally formed first redistribution pattern in the first opening and on the first insulating layer, forming a second insulating layer on the first insulating layer to cover the first redistribution pattern, and performing a planarization process on the second insulating layer to expose the first redistribution pattern.

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