公开(公告)号：US20170263859A1

公开(公告)日：2017-09-14

申请号：US15177138

申请日：2016-06-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Dmytro Apalkov ,  Gen Feng ,  Mohamad Towfik Krounbi

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy. The pinned layer includes a high perpendicular magnetic anisotropy (PMA) layer including at least one nonmagnetic component, a magnetic layer and a magnetic barrier layer between the high PMA layer and the magnetic layer. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component of the high PMA layer.

公开(公告)号：US20170256708A1

公开(公告)日：2017-09-07

申请号：US15177159

申请日：2016-06-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Mohamad Towfik Krounbi ,  Dustin William Erickson ,  Xueti Tang ,  Donkoun Lee

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.

公开(公告)号：US09577181B2

公开(公告)日：2017-02-21

申请号：US14880650

申请日：2015-10-12

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jangeun Lee

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，不对称自由层和垂直磁各向异性（PMA）诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 第一和第二铁磁层各自含有Co和CoFe中的至少一种。 磁结被配置成使得当写入电流通过磁结时，非对称自由层可在稳定磁状态之间切换。

公开(公告)号：US20160197265A1

公开(公告)日：2016-07-07

申请号：US14981391

申请日：2015-12-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 写入电流产生焦耳加热，使得自由层具有大于室温的开关温度。 自由层包括温度敏感且具有至少一个双层的多层。 每个双层包括第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括磁性层。 该多层膜具有室温矫顽力和切换温度矫顽力。 开关温度矫顽力不超过室温矫顽力的一半。

公开(公告)号：US20160086645A1

公开(公告)日：2016-03-24

申请号：US14852422

申请日：2015-09-11

Applicant: Samsung Electronics Co., LTD.

Inventor： Dustin William Erickson ,  Xueti Tang ,  Jangeun Lee ,  Eugene Chen

IPC: G11C11/14 ,  C23C14/34 ,  C23C14/58 ,  G11C11/16

CPC classification number: G11C11/14 ,  C23C14/081 ,  C23C14/5806 ,  C23C14/5873 ,  G11C11/161

Abstract: A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置和磁性结的磁结的方法。 提供了参考层，结晶MgO隧道势垒层和自由层。 结晶MgO隧道势垒层是连续的，具有（001）取向并且具有不超过11​​埃和不小于2埃的厚度。 结晶MgO隧道势垒层位于自由层和参考层之间。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20160035970A1

公开(公告)日：2016-02-04

申请号：US14880650

申请日：2015-10-12

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jangeun Lee

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，不对称自由层和垂直磁各向异性（PMA）诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 第一和第二铁磁层各自含有Co和CoFe中的至少一种。 磁结被配置成使得当写入电流通过磁结时，非对称自由层可在稳定磁状态之间切换。

公开(公告)号：US09184375B1

公开(公告)日：2015-11-10

申请号：US14558145

申请日：2014-12-02

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jangeun Lee

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，不对称自由层和垂直磁各向异性（PMA）诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 磁结被配置成使得当写入电流通过磁结时，非对称自由层可在稳定磁状态之间切换。