公开(公告)号：US20150282012A1

公开(公告)日：2015-10-01

申请号：US14662883

申请日：2015-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunggi BAEK ,  Jiyeon Lee ,  Jonghwa Choi ,  Dongwoo Kim ,  Jinhong Seol ,  Changhwan Lee ,  Yonggil Han

IPC: H04W36/00 ,  H04W4/16 ,  H04L29/06

CPC classification number: H04W36/0022 ,  H04L65/1006 ,  H04L65/1016 ,  H04L65/1069 ,  H04L65/1076 ,  H04L65/1096 ,  H04W4/16

Abstract: A method of providing call services for an electronic device is provided. The method may include receiving a call request from the user; determining whether the call request is a request for a call via an Internet Protocol (IP) Multimedia System (IMS) network; making, when it is determined that the call request is a request for a call via an IMS network, an attempt to set up the call via the IMS network; determining whether the attempt for the call setup via the IMS network is successful; and performing Circuit Switched Fallback (CSFB) when it is determined that the attempt for the call setup via the IMS network is unsuccessful.

Abstract translation: 提供了一种为电子设备提供呼叫服务的方法。 该方法可以包括从用户接收呼叫请求; 确定所述呼叫请求是否是经由因特网协议（IP）多媒体系统（IMS）网络的呼叫请求; 当确定呼叫请求是经由IMS网络进行呼叫的请求时，尝试通过IMS网络建立呼叫; 确定通过IMS网络建立呼叫的尝试是否成功; 并且当确定通过IMS网络建立呼叫的尝试不成功时执行电路交换回退（CSFB）。

公开(公告)号：US08980731B2

公开(公告)日：2015-03-17

申请号：US13724632

申请日：2012-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Ho Kim ,  Sunghae Lee ,  Hanvit Yang ,  Dongwoo Kim ,  Chaeho Kim ,  Daehyun Jang ,  Ju-Eun Kim ,  Yong-Hoon Son ,  Sangryol Yang ,  Myoungbum Lee ,  Kihyun Hwang

IPC: H01L21/04 ,  H01L21/82 ,  H01L21/336 ,  H01L21/3205 ,  H01L29/76 ,  H01L29/792 ,  H01L27/115 ,  H01L29/66

CPC classification number: H01L21/04 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

Abstract: Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.

Abstract translation: 提供了形成半导体器件的方法。 所述方法可以包括形成在衬底上交替和重复堆叠的第一和第二层，以及形成穿透第一层和第二层的开口。 所述方法还可以包括在开口中形成第一半导体图案。 所述方法还可以包括在第一半导体图案上形成绝缘图案。 所述方法还可以包括在绝缘图案上形成第二半导体图案。 所述方法还可以包括在第一半导体图案中提供掺杂剂。 此外，所述方法可以包括热处理第一半导体图案的一部分以形成第三半导体图案。

公开(公告)号：US08765538B2

公开(公告)日：2014-07-01

申请号：US14061304

申请日：2013-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bio Kim ,  Kihyun Hwang ,  Jaeyoung Ahn ,  SeungHyun Lim ,  Dongwoo Kim

IPC: H01L21/336

CPC classification number: H01L29/66666 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

Abstract: Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.

Abstract translation: 提供三维半导体存储器件及其形成方法。 该器件包括衬底，堆叠在衬底上的导电图案，以及穿透要连接到衬底的导电图案的有源图案。 有源图案可以包括设置在有源图案的上部的第一掺杂区域和与第一掺杂区域的至少一部分重叠的扩散阻抗掺杂区域。 扩散阻止掺杂区域可以是掺杂有碳的区域。