公开(公告)号：US5812842A

公开(公告)日：1998-09-22

申请号：US783381

申请日：1997-01-13

Applicant: Brett Williams ,  Scott Schaefer

Inventor： Brett Williams ,  Scott Schaefer

IPC: G11C7/10 ,  G11C11/4072 ,  G11C11/4096 ,  G06F9/00

CPC classification number: G11C11/4096 ,  G11C11/4072 ,  G11C7/1045 ,  G11C7/1072

Abstract: A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command without interrupting the active state of the memory array.

Abstract translation: 一种用于最初编程同步动态随机存取存储器（SDRAM）装置的方法，用于响应于第一命令具有第一控制操作选项，并且用于重新编程SDRAM装置以响应于第二命令具有第二控制操作选项而不中断 存储器阵列的活动状态。

公开(公告)号：US5751656A

公开(公告)日：1998-05-12

申请号：US772974

申请日：1996-12-23

Applicant: Scott Schaefer

Inventor： Scott Schaefer

IPC: G11C7/10 ,  G11C8/00 ,  G11C8/06 ,  G11C11/408

CPC classification number: G11C7/22 ,  G11C11/4076 ,  G11C11/4082 ,  G11C11/4087 ,  G11C7/1018 ,  G11C7/1027 ,  G11C7/1072 ,  G11C8/06 ,  G11C8/10 ,  G11C8/18

Abstract: Disclosed is a synchronous DRAM memory module with control circuitry that allows the memory module to operate partially asynchronously. Specifically, a circuit is disclosed which utilizes address transition detection to begin decoding the column-address immediately after a new column-address is present on the address bus lines and without waiting for the column-address strobe signal to synchronize with the rising or falling edge of the synchronizing clock signal. Also disclosed is a manner of controlling the latching circuitry whereby each new column-address may be decoded and held within a buffer until the column-address strobe signal notifies the circuitry that the column-address is correct and is to be input into the microprocessor. Thus, each new column-address will be decoded immediately after it is present on the address lines and undesired column-addresses will be discarded, while desired column-addresses are input into the memory array bank immediately upon the presence of the column-address strobe which denotes that the column-address is final. The present invention improves the access times of read and write operations in synchronous DRAM memory by up to a complete clock cycle.

公开(公告)号：US5566122A

公开(公告)日：1996-10-15

申请号：US407721

申请日：1995-03-20

Applicant: Scott Schaefer

Inventor： Scott Schaefer

IPC: G11C7/22 ,  G11C8/12 ,  G11C7/00

CPC classification number: G11C7/22 ,  G11C8/12

Abstract: A memory array for an electronic device comprises a design which requires fewer memory devices to be activated to access a plurality of data bits, thereby reducing the amount of power required to access the data bits. The design comprises the use of a plurality of memory devices, each of which has a plurality of arrays and data out lines.

Abstract translation: 用于电子设备的存储器阵列包括需要更少的存储器件被激活以访问多个数据位的设计，从而减少访问数据位所需的功率量。 该设计包括使用多个存储器件，每个存储器件具有多个阵列和数据输出线。

公开(公告)号：US08045415B2

公开(公告)日：2011-10-25

申请号：US12707491

申请日：2010-02-17

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G11C17/18

CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

Abstract: Techniques are disclosed for reading operating parameters from programmable elements on memory devices to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, operating voltages, or timing parameters. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for each memory device in the system.

Abstract translation: 公开了用于从存储器设备上的可编程元件读取操作参数以配置存储器系统的技术。 更具体地，位于存储器件上的诸如反熔丝的可编程元件在制造期间被编程，其中测量的操作参数对应于存储器件。 操作参数可以包括例如工作电流值，工作电压或时序参数。 存储器件可以并入到并入到系统中的存储器模块中。 一旦存储器模块被并入到系统中，可以访问可编程元件，使得可以将存储器系统配置成根据为系统中的每个存储器件测量的操作参数进行最佳操作。

公开(公告)号：US20100142251A1

公开(公告)日：2010-06-10

申请号：US12707491

申请日：2010-02-17

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G11C5/06 ,  G06F12/00 ,  G11C17/18

CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

Abstract: Techniques are disclosed for reading operating parameters from programmable elements on memory devices to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, operating voltages, or timing parameters. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for each memory device in the system.

Abstract translation: 公开了用于从存储器设备上的可编程元件读取操作参数以配置存储器系统的技术。 更具体地，位于存储器件上的诸如反熔丝的可编程元件在制造期间被编程，其中测量的操作参数对应于存储器件。 操作参数可以包括例如工作电流值，工作电压或时序参数。 存储器件可以并入到并入到系统中的存储器模块中。 一旦存储器模块被并入到系统中，可以访问可编程元件，使得可以将存储器系统配置成根据为系统中的每个存储器件测量的操作参数进行最佳操作。

公开(公告)号：US20100122061A1

公开(公告)日：2010-05-13

申请号：US12690790

申请日：2010-01-20

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G06F12/02

CPC classification number: G06F1/206 ,  G06F1/3203 ,  G06F1/3275 ,  G11C5/04 ,  G11C7/04 ,  G11C7/20 ,  G11C2029/4402 ,  Y02D10/13 ,  Y02D10/14

Abstract: Systems, memory modules and methods of configuring systems including memory modules are provided. The memory modules include device parameters specifically corresponding to memory devices of the memory module. The device parameters may be retrieved from a database, and the system may be configured in accordance with the device parameters retrieved from the database.

Abstract translation: 提供了系统，存储器模块和配置包括存储器模块的系统的方法。 存储器模块包括特别对应于存储器模块的存储器件的器件参数。 可以从数据库检索设备参数，并且可以根据从数据库检索的设备参数来配置系统。

公开(公告)号：US07684276B2

公开(公告)日：2010-03-23

申请号：US12366550

申请日：2009-02-05

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G11C17/18

CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

Abstract: Techniques are disclosed for reading operating parameters from programmable elements on memory devices to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, or voltage and timing parameters. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for each memory device in the system.

Abstract translation: 公开了用于从存储器设备上的可编程元件读取操作参数以配置存储器系统的技术。 更具体地，位于存储器件上的诸如反熔丝的可编程元件在制造期间被编程，其中测量的操作参数对应于存储器件。 操作参数可以包括例如工作电流值或电压和定时参数。 存储器件可以并入到并入到系统中的存储器模块中。 一旦存储器模块被并入到系统中，可以访问可编程元件，使得可以将存储器系统配置成根据为系统中的每个存储器件测量的操作参数进行最佳操作。

公开(公告)号：US07499362B2

公开(公告)日：2009-03-03

申请号：US11338279

申请日：2006-01-24

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G11C17/18

CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

Abstract: A technique for storing accurate operating current values using programmable elements on memory devices. More specifically, programmable elements, such as antifuses, located on a memory device are programmed with measured operating current values corresponding to the memory device, during fabrication. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract translation: 一种使用可编程元件在存储器件上存储精确的工作电流值的技术。 更具体地，在制造期间，位于存储器件上的诸如反熔丝的可编程元件被编程为对应于存储器件的测量的工作电流值。 存储器件可以并入到并入到系统中的存储器模块中。 一旦将存储器模块并入到系统中，可以访问可编程元件，使得系统可以被配置为根据对系统中的每个存储器件测量的工作电流值进行最佳操作。

公开(公告)号：US20080130343A1

公开(公告)日：2008-06-05

申请号：US12013266

申请日：2008-01-11

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G11C5/02

CPC classification number: G06F1/206 ,  G06F1/3203 ,  G06F1/3275 ,  G11C5/04 ,  G11C7/04 ,  G11C7/20 ,  G11C2029/4402 ,  Y02D10/13 ,  Y02D10/14

Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique device parameters corresponding to specific memory devices on the memory modules are accessed from a database such that the device parameters may be implemented to improve system performance. The device parameters may include sizes, speeds, operating voltages, or timing parameters of the memory modules. Memory modules comprising a number of volatile memory devices may be fabricated. Device parameters corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique device parameters corresponding to the specific memory devices on the memory modules.

Abstract translation: 用于制造和实现存储器模块的存储器模块和方法，其中与存储器模块上的特定存储器件相对应的独特器件参数从数据库访问，使得可以实现器件参数以提高系统性能。 设备参数可以包括存储器模块的尺寸，速度，工作电压或定时参数。 可以制造包括多个易失性存储器件的存储器模块。 对应于存储器模块上的特定存储器件的器件参数可以存储在数据库中，并且在制造期间或在系统中的存储器模块的实现期间被访问。 可以通过实现与存储器模块上的特定存储器设备相对应的唯一设备参数来优化系统性能。

公开(公告)号：US07333355B2

公开(公告)日：2008-02-19

申请号：US11211940

申请日：2005-08-24

Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

IPC: G11C5/02

CPC classification number: G06F1/206 ,  G06F1/3203 ,  G06F1/3275 ,  G11C5/04 ,  G11C7/04 ,  G11C7/20 ,  G11C2029/4402 ,  Y02D10/13 ,  Y02D10/14

Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique operating current values corresponding to specific memory devices on the memory modules are accessed from a database such that the operating current values may be implemented to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique operating current values corresponding to the specific memory devices on the memory modules.

Abstract translation: 用于制造和实现存储器模块的存储器模块和方法，其中对应于存储器模块上的特定存储器件的独特工作电流值从数据库访问，使得可以实现工作电流值以提高系统性能。 可以制造包括多个易失性存储器件的存储器模块。 对应于存储器模块上的特定存储器件的工作电流值可以存储在数据库中，并且在系统中的存储器模块的制造期间或实现期间被访问。 可以通过实现与存储器模块上的特定存储器设备相对应的独特的工作电流值来优化系统性能。