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    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH DIFFERENTIALLY NITRIDED GATE INSULATORS
    51.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH DIFFERENTIALLY NITRIDED GATE INSULATORS 审中-公开
    用不同绝缘栅绝缘体制作半导体器件的方法

    公开(公告)号：US20110306171A1

    公开(公告)日：2011-12-15

    申请号：US13105652

    申请日：2011-05-11

    申请人： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

    发明人： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

    IPC分类号： H01L21/8238 ,  H01L21/28

    CPC分类号： H01L21/823857 ,  H01L21/28202 ,  H01L29/518

    摘要： An insulation layer is formed on a substrate having an NMOS region and a PMOS region defined therein. A first conductive layer is formed on the insulation layer in the PMOS region, leaving a portion of the insulation layer in the NMOS region exposed. Nitriding is performed to produce a first nitrogen concentration in the insulation layer in the NMOS region and a second nitrogen concentration less than the first nitrogen concentration in the insulation layer in the PMOS region. A second conductive layer is formed on the insulation layer and the first conductive layer and the first and second conductive layers and the insulation layer are patterned to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively.

    摘要翻译： 在其上限定有NMOS区和PMOS区的基板上形成绝缘层。 在PMOS区域中的绝缘层上形成第一导电层，使NMOS区域中的绝缘层的一部分露出。 进行氮化，以在NMOS区域中的绝缘层中产生第一氮浓度，并且在PMOS区域中的绝缘层中小于第一氮浓度的第二氮浓度。 第二导电层形成在绝缘层上，并且第一导电层以及第一和第二导电层和绝缘层被图案化以分别在NMOS区域和PMOS区域中形成第一栅极结构和第二栅极结构。

    Formation of a high-K crystalline dielectric composition
    53.
    发明授权
    Formation of a high-K crystalline dielectric composition 有权
    形成高K结晶介电组合物

    公开(公告)号：US08476155B1

    公开(公告)日：2013-07-02

    申请号：US12835790

    申请日：2010-07-14

    申请人： Ha-Jin Lim ,  Weon-Hong Kim

    发明人： Ha-Jin Lim ,  Weon-Hong Kim

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02181 ,  H01L21/02148 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3105 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an “M” crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric.

    摘要翻译： 提供形成电介质的方法和制造半导体器件的方法。 该方法包括在下层上形成包含Hf，O和“A”元素的预备电介质。 预置电介质形成为非晶结构或非晶结构和“M”晶体结构的混合结构。 “A”元素在“A”元素的总含量和预置电介质中的Hf的约1at％至约5at％的“A”元素。 通过氮化处理，将氮气加入到初步电介质中。 通过相变过程将含氮电介质变成具有“T”晶体结构的电介质，其中“T”晶体结构不同于“M”晶体结构。 在“T”晶体电介质上形成上层。

    Method for fabricating semiconductor device including nitrided gate insulator
    55.
    发明授权
    Method for fabricating semiconductor device including nitrided gate insulator 有权
    包括氮化栅极绝缘体的半导体器件制造方法

    公开(公告)号：US09318335B2

    公开(公告)日：2016-04-19

    申请号：US14685618

    申请日：2015-04-14

    申请人： Weon-Hong Kim ,  Moon-Kyun Song ,  Min-Joo Lee ,  Hyung-Suk Jung

    发明人： Weon-Hong Kim ,  Moon-Kyun Song ,  Min-Joo Lee ,  Hyung-Suk Jung

    IPC分类号： H01L21/28 ,  H01L29/51

    CPC分类号： H01L29/511 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7848

    摘要： A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al).

    摘要翻译： 一种制造半导体器件的方法包括在衬底上形成界面层，在界面层上形成具有第一介电常数的第一栅极绝缘层，形成具有小于第一介电常数的第二介电常数的第二栅极绝缘层， 所述第一栅极绝缘层退火所述基板，对所述退火的第一和第二栅极绝缘层进行氮化，以形成氮化栅极绝缘体，在所述氮化物栅极绝缘体上形成功函数控制层，以及在所述工件上形成金属栅电极 功能控制层。 工作功能控制层和金属栅电极中的至少一个为铝或铝。