摘要:
A solid-state imaging device includes a plurality of pixels arranged two-dimensionally. Each pixel includes a photoelectric converter (2) for converting incident light to a charge, and a gray filter (6a, 6b, 6c) having a visible light transmittance that is different depending on the photoelectric converter (2). According to this construction, the plurality of pixels have different sensitivities to incident light. By combining pixel signals obtained from three pixels having different sensitivities, a wider dynamic range can be achieved.
摘要:
A solid-state imaging device can be provided by which a signal charge stored in a photodiode can be transferred completely even when a power supply voltage is low. The solid-state imaging device includes: a plurality of pixel cells arranged on a semiconductor substrate; and a driving unit that is provided for driving the plurality of pixel cells. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a transfer transistor that is provided for reading out the signal charge stored in the photodiode; and a potential smoothing unit that is formed so as to allow a potential from the photodiode to the transfer transistor to change smoothly.
摘要:
A solid-state image sensing device includes: a pixel array in which pixels performing photoelectric conversion are arranged in rows and columns; and a column amplification section in which an image signal output from each pixel is amplified. The column amplification section includes amplifiers each of which is provided for each column, and the column amplification section is connected to a power supply voltage feed section and the ground. An impedance on the power supply side of the amplifier is greater than an impedance on the ground side.
摘要:
An imaging device chip set includes an imaging chip provided for obtaining an electric signal by photoelectric conversion of incident light, and a DSP chip provided for carrying out digital signal processing with respect to the electric signal obtained by the imaging chip. The imaging chip includes a plurality of unit pixels for generating the electric signal by the photoelectric conversion of incident light, a horizontal scanning circuit for selecting the unit pixels in a horizontal direction, and a vertical scanning circuit for selecting the unit pixels in a vertical direction. The DSP chip includes a timing generating circuit for generating timing pulses necessary for operations of the horizontal scanning circuit and the vertical scanning circuit, and a digital signal processing circuit for carrying out digital signal processing with respect to the electric signal generated by the plurality of unit pixels. The timing generating circuit and the digital signal processing circuit, which are included in the DSP chip, are formed with CMOS transistors. The plurality of unit pixels, the horizontal scanning circuit, and the vertical scanning circuit, which are included in the imaging chip, are formed with transistors of the same conductivity type.
摘要:
In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要:
An image system uses an amplification-type MOS sensor for receiving an optical image through a photoelectric conversion element, converting the image into an electrical signal, and outputting the signal. This system includes an optical system for guiding this optical image to a predetermined position, an image processing means having a sensor for photoelectrically converting the optical image guided to the predetermined position by the optical system into an electrical signal in units of pixels, and a signal process device for processing an output from the image processing means, and outputting the resultant data. The sensor includes a photoelectric conversion element placed at the predetermined position, an output circuit having an amplification MOS transistor connected to the photoelectric conversion element and serving to amplify and output an output from the photoelectric conversion element at a first timing and output noise independent of the output from the photoelectric conversion element at a second timing, and a noise reduction circuit, connected to the output of the output circuit, having the same impedance at the first and second timings when viewed from the output circuit, and obtaining the difference between outputs from the output circuits at the first and second timings. By setting the same impedance, proper noise cancellation can be performed.
摘要:
Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要:
The image pickup device comprises: an image pickup unit 1 in which a plurality of unit cells for generating reset and read voltages are arranged; a noise eliminating unit 6 for generating, with respect to each unit cell, a differential voltage corresponding to a difference between the reset and read voltages; and output units 5 and 7 for outputting the read and differential voltages, respectively, to a signal processing apparatus. The signal processing apparatus comprises: a judging unit 8 for judging whether each of the read voltages is within a predetermined range; and a system output unit 9 for outputting, for unit cells whose voltages are judged as being within the predetermined range, corresponding differential voltages as luminance information of the unit cells; for unit cells whose voltages are judged as not being within the predetermined range, a predetermined voltage indicating high luminance as luminance information of the unit cells.
摘要:
A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要:
A driving method for a solid state imaging device with a horizontal blanking period for each scanning line and a vertical blanking period for each field and including a plurality of cell sections formed in a matrix form on a semiconductor substrate, the plurality of cell sections including a plurality of signal charge storage sections for storing signal charges, a plurality of readout sections for reading out the signal charges from the signal charge storing sections, a plurality of signal charge transferring sections for transferring the readout signal charges, and a plurality of pixel electrodes electrically connected to the plurality of signal charge storage sections, a photoelectric converting layer including at least one photoelectric converting film stacked on the plurality of pixel electrodes, the photoelectric converting film being electrically connected to the electrodes and having a pn junction, and at least one transparent electrode formed on the photoelectric converting film.