Solid-state imaging device with internal smear eliminator
    2.
    发明授权
    Solid-state imaging device with internal smear eliminator 失效
    具有内部抹污消除器的固态成像装置

    公开(公告)号:US5463232A

    公开(公告)日:1995-10-31

    申请号:US43632

    申请日:1993-04-08

    CPC分类号: H01L29/1062 H01L27/14831

    摘要: A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.

    摘要翻译: 固态成像装置包括光敏电池阵列,每个光敏单元包括光电转换部分,该光电转换部分布置在基板的表面上并具有光接收开口。 光电转换部分响应于通过该开口的入射光量而产生电载体的分组。 在基板表面上与光电转换部相邻配置电荷转移部。 该转印部分限定在基板表面中沿预定方向线性延伸的转移通道区域,并且使由此获得的载体依次移动。 遮光部被配置为将除了开口部之外的光电转换部覆盖,以防止通过开口的入射光作为泄漏部件被引入到传送通道区域,通过切断泄漏部件的内部反射路径 到此。

    Solid-state image sensor
    4.
    发明授权
    Solid-state image sensor 有权
    固态图像传感器

    公开(公告)号:US06211509B1

    公开(公告)日:2001-04-03

    申请号:US09280722

    申请日:1999-03-30

    IPC分类号: H01L2700

    摘要: A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state.

    摘要翻译: MOS型固态图像传感器具有以矩阵形式布置在p型Si衬底上的多个像素单元。 每个像素单元具有包括光电二极管的光电转换部分和包括放大MOS晶体管的信号提取部分。 用于隔离像素单元的每个元件隔离区域具有形成在基板上的场氧化膜和形成在氧化膜正下方的基板层中的p型扩散层,以具有比基板层更高的载流子杂质浓度。 每个元件隔离区域的底部位于比平衡状态从光电二极管的p-n结延伸到衬底的耗尽层的底部更深的位置。

    Solid-state image pickup device and method of manufacturing the same
    8.
    发明授权
    Solid-state image pickup device and method of manufacturing the same 有权
    固体摄像装置及其制造方法

    公开(公告)号:US07554141B2

    公开(公告)日:2009-06-30

    申请号:US11392616

    申请日:2006-03-30

    CPC分类号: H01L27/14689 H01L27/1463

    摘要: A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

    摘要翻译: 一种固态摄像装置,包括:半导体衬底,其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层,所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层,其位于基板主体上,多个光电转换部分由第二N型半导体层形成,该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层,其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层,并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

    Solid-state imaging device with gate contacts overlapping both an isolation region and an active region
    9.
    发明授权
    Solid-state imaging device with gate contacts overlapping both an isolation region and an active region 有权
    具有栅极触点的固态成像器件与隔离区域和有源区域重叠

    公开(公告)号:US07456889B2

    公开(公告)日:2008-11-25

    申请号:US11251825

    申请日:2005-10-18

    摘要: A solid-state imaging device has an imaging region in which unit cells, each of which includes a photoelectric conversion section and a signal scanning circuit section, are disposed on a semiconductor substrate in a two-dimensional manner. The signal scanning circuit section is composed of a plurality of transistors. At least part of a gate contact of each transistor in the signal scanning circuit section is formed on an active region of each transistor.

    摘要翻译: 固态成像装置具有成像区域,其中包括光电转换部分和信号扫描电路部分的单元电池以二维方式设置在半导体衬底上。 信号扫描电路部分由多个晶体管构成。 信号扫描电路部分中的每个晶体管的栅极接触的至少一部分形成在每个晶体管的有源区上。

    Solid-state image pickup device and method of manufacturing the same

    公开(公告)号:US20060219867A1

    公开(公告)日:2006-10-05

    申请号:US11392616

    申请日:2006-03-30

    IPC分类号: H01L27/00 H01L31/00

    CPC分类号: H01L27/14689 H01L27/1463

    摘要: A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.