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168 条记录 (耗时 0.039 秒)

    Stent inserting device
    52.
    发明申请
    Stent inserting device 有权
    支架插入装置

    公开(公告)号：US20080262591A1

    公开(公告)日：2008-10-23

    申请号：US12070095

    申请日：2008-02-14

    申请人： Kyong-Min Shin ,  Sung-Min Kim

    发明人： Kyong-Min Shin ,  Sung-Min Kim

    IPC分类号： A61F2/06

    CPC分类号： A61F2/95 ,  A61F2/90 ,  A61F2002/9505 ,  A61F2002/9665

    摘要： A stent inserting device is used in inserting a self-expandable stent with leading and trailing ends into a tubular organ of a living body. The stent inserting device includes a grip body, an external tube attached to a front end of the grip body, a push member movably inserted into the external tube from a rear end of the grip body, and a tubular cap for removably receiving the stent in a compressed state. The tubular cap has a front end operatively connected to the push member and a rear end slidably fitted to a front end of the external tube. The stent inserting device is designed to hold the stent within the tubular cap in such a manner that the stent is first expanded at the trailing end and then gradually expanded toward the leading end when the tubular cap is pushed away from the external tube.

    摘要翻译： 支架插入装置用于将具有前端和后端的自扩张支架插入活体的管状器官中。 所述支架插入装置包括握持体，附接到所述把手本体的前端的外部管，从所述把手主体的后端可移动地插入到所述外部管中的推动构件，以及用于将所述支架可拆卸地接收的管状帽 压缩状态。 管状帽具有可操作地连接到推动构件的前端和可滑动地装配到外部管的前端的后端。 支架插入装置被设计成将支架保持在管状帽内，使得支架首先在后端膨胀，然后当管状帽被推离外管时朝向前端逐渐膨胀。

    Methods of forming a pattern and methods of manufacturing a memory device using the same
    54.
    发明申请
    Methods of forming a pattern and methods of manufacturing a memory device using the same 有权
    形成图案的方法和使用该图案的存储器件的制造方法

    公开(公告)号：US20080081442A1

    公开(公告)日：2008-04-03

    申请号：US11605266

    申请日：2006-11-29

    申请人： Min-Sang Kim ,  Sung-Young Lee ,  Sung-Min Kim ,  Eun-Jung Yun ,  In-Hyuk Choi

    发明人： Min-Sang Kim ,  Sung-Young Lee ,  Sung-Min Kim ,  Eun-Jung Yun ,  In-Hyuk Choi

    IPC分类号： H01L21/20

    CPC分类号： H01L27/115 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/792

    摘要： In a method of forming a pattern, a sacrificial layer pattern and a stop layer pattern for preventing or reducing an epitaxial growth may be formed on a substrate. The sacrificial layer pattern may have a first hole therethrough, and the first hole partially exposes a top surface of the substrate. At least one active pattern may be formed on a bottom and a sidewall of the first hole by performing a selective epitaxial growth process on the top surface of the substrate and a sidewall of the sacrificial layer pattern. The sacrificial layer pattern and the stop layer pattern for preventing or reducing the epitaxial growth may be removed from the substrate. The at least one active pattern formed by the above method may have a finer size and an improved shaped compared to a conventional active pattern formed by directly patterning layers using a photoresist pattern. Damages in a photolithography process may be prevented or reduced from being generated.

    摘要翻译： 在形成图案的方法中，可以在基板上形成用于防止或减少外延生长的牺牲层图案和停止层图案。 牺牲层图案可以具有穿过其的第一孔，并且第一孔部分地暴露衬底的顶表面。 通过在衬底的顶表面和牺牲层图案的侧壁上执行选择性外延生长工艺，可以在第一孔的底部和侧壁上形成至少一个活性图案。 可以从衬底去除用于防止或减少外延生长的牺牲层图案和停止层图案。 与通过使用光致抗蚀剂图案直接图案化图案形成的常规有源图案相比，通过上述方法形成的至少一个有源图案可以具有更细的尺寸和改进的形状。 可以防止或减少光刻工艺中的损伤。

    Portable electronic device
    56.
    发明申请
    Portable electronic device 有权
    便携式电子设备

    公开(公告)号：US20080019083A1

    公开(公告)日：2008-01-24

    申请号：US11723912

    申请日：2007-03-22

    申请人： Seung-Geun Lim ,  Won-Seok Joo ,  Sung-Min Kim

    发明人： Seung-Geun Lim ,  Won-Seok Joo ,  Sung-Min Kim

    IPC分类号： H05K5/00 ,  H04M1/00

    CPC分类号： H04M1/0283 ,  B29C45/1671 ,  B29L2031/3437

    摘要： A portable electronic device having a front cover, a rear cover, and wherein one of the front cover and the rear cover is metallic and has a pattern portion with a predetermined pattern. In addition, a portable electronic device having a front cover, a rear cover, and a metallic pattern layer provided on at least one of the covers, the metallic pattern layer having a predetermined pattern.

    摘要翻译： 一种具有前盖，后盖的便携式电子设备，其中前盖和后盖中的一个是金属的并且具有预定图案的图案部分。 此外，具有设置在至少一个盖上的前盖，后盖和金属图案层的便携式电子装置，金属图案层具有预定图案。

    Semiconductor devices having field effect transistors and methods of fabricating the same
    57.
    发明申请
    Semiconductor devices having field effect transistors and methods of fabricating the same 有权
    具有场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US20050158934A1

    公开(公告)日：2005-07-21

    申请号：US11030770

    申请日：2005-01-05

    申请人： Eun-Jung Yun ,  Hye-Jin Cho ,  Dong-Won Kim ,  Sung-Min Kim

    发明人： Eun-Jung Yun ,  Hye-Jin Cho ,  Dong-Won Kim ,  Sung-Min Kim

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/786 ,  H01L21/425

    CPC分类号： H01L29/785 ,  H01L21/823437 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795

    摘要： A semiconductor device having a field effect transistor and a method of fabricating the same. In-situ doped epitaxial patterns are respectively formed at both sidewalls of a protruded channel pattern from a substrate by performing an in-situ doped epitaxial growth process. The in-situ doped epitaxial pattern has a conformal impurity concentration throughout. Accordingly, source/drain regions with a conformal impurity concentration are connected throughout a channel width of a channel region including both sidewalls of a protruded channel pattern. As a result, it is possible to maximize a driving current of the filed effect transistor, and an on-off characteristic can be highly stabilized.

    摘要翻译： 一种具有场效应晶体管的半导体器件及其制造方法。 通过进行原位掺杂的外延生长工艺，从衬底分别在突出沟道图案的两个侧壁处形成原位掺杂的外延图案。 原位掺杂的外延图案贯穿整个杂质浓度。 因此，具有共形杂质浓度的源极/漏极区域贯穿包括突出沟道图案的两个侧壁的沟道区域的沟道宽度。 结果，可以使场效应晶体管的驱动电流最大化，并且开 - 关特性可以高度稳定。

    SEMICONDUCTOR DEVICE INCLUDING ACTIVE FIN
    58.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING ACTIVE FIN 审中-公开
    包括有源FIN的半导体器件

    公开(公告)号：US20160276482A1

    公开(公告)日：2016-09-22

    申请号：US15060265

    申请日：2016-03-03

    申请人： Sung-Min Kim ,  Dong-Ho Cha ,  Sunhom Steve Paak

    发明人： Sung-Min Kim ,  Dong-Ho Cha ,  Sunhom Steve Paak

    IPC分类号： H01L29/78 ,  H01L27/092 ,  H01L27/11

    CPC分类号： H01L29/7848 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/165

    摘要： A semiconductor device includes first through fourth active fins, which extend alongside one another in a first direction; and a field insulating film that covers lower portions of the first through fourth active fins, the first and second active fins protrude from the field insulating film at a first height, the third active fin protrudes from the field insulating film at a second height different from the first height, and an interval between the first and second active fins is different from an interval between the third and fourth active fins.

    摘要翻译： 半导体器件包括在第一方向上彼此并列延伸的第一至第四活性鳍片; 以及覆盖所述第一至第四活性鳍片的下部的场绝缘膜，所述第一和第二活性鳍片在所述场绝缘膜处以第一高度突出，所述第三活性鳍片从所述场绝缘膜突出，所述第二高度不同于 第一高度以及第一和第二活动翅片之间的间隔与第三和第四活动翅片之间的间隔不同。

    Wideband single resonance antenna
    59.
    发明授权
    Wideband single resonance antenna 有权
    宽带单共振天线

    公开(公告)号：US08760357B2

    公开(公告)日：2014-06-24

    申请号：US13325118

    申请日：2011-12-14

    申请人： Sung-Min Kim

    发明人： Sung-Min Kim

    IPC分类号： H01Q9/04

    CPC分类号： H01Q1/243 ,  H01Q1/38 ,  H01Q5/378 ,  H01Q9/42

    摘要： Wideband single resonance antenna. An antenna may include a first conductor unit and a second conductor unit. The first conductor unit may be configured to have one end electrically coupled to a power. The second conductor unit may be configured to have one end electrically coupled to a ground, to surround at least one side of the first conductor unit, and to be electrically separated from the first conductor unit.

    摘要翻译： 宽带单共振天线。 天线可以包括第一导体单元和第二导体单元。 第一导体单元可以被配置为具有电耦合到电力的一端。 第二导体单元可以被配置为具有电耦合到地的一端，以围绕第一导体单元的至少一侧，并且与第一导体单元电隔离。