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公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US08247817B2
公开(公告)日：2012-08-21
申请号：US12379874
申请日：2009-03-03
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251
摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.
摘要翻译： 在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。 按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。 在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。 在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。 为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了 多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。
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公开(公告)号：US08080449B2
公开(公告)日：2011-12-20
申请号：US12755584
申请日：2010-04-07
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L21/00
CPC分类号： H01L29/66765
摘要： Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.
摘要翻译： 栅电极形成在基板上。 形成栅绝缘膜以覆盖栅电极。 半导体层形成在与至少栅电极重叠的区域中的栅极绝缘膜上的区域中。 使用包含掺杂剂的气体将等离子体处理施加到半导体层，从而增加半导体层的表面层的杂质浓度。 在施加了等离子体处理的半导体层的表面层上形成导电膜。 通过蚀刻导电膜形成源电极和漏电极。
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公开(公告)号：US07727784B2
公开(公告)日：2010-06-01
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/00
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译： 本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。 在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入 前体膜。 这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。 当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。
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公开(公告)号：US20100109010A1
公开(公告)日：2010-05-06
申请号：US12608193
申请日：2009-10-29
申请人： Hidekazu MIYAKE , Takuo Kaitoh , Terunori Saitou
发明人： Hidekazu MIYAKE , Takuo Kaitoh , Terunori Saitou
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , H01L27/3262 , H01L29/78624
摘要： A display device having thin film transistors which can efficiently suppress an OFF-leak current while suppressing the decrease of an ON current is provided. The display device includes an insulation substrate, and thin film transistors which are formed on the insulation substrate. Each thin film transistor includes a conductive layer on which a gate electrode is formed, a first insulation layer which is formed on the conductive layer, a semiconductor layer which is formed on the first insulation layer and has a first semiconductor film thereof formed above the gate electrode, the first semiconductor film having a first region and a second region which are spaced apart from each other on an upper surface thereof, a first electrode which is connected to the upper surface of the first semiconductor film via the first region, and a second electrode which is connected to the upper surface of the first semiconductor film via the second region. A portion of the gate electrode which is covered with the first semiconductor film is arranged closer to the first region than the second region.
摘要翻译： 提供一种具有薄膜晶体管的显示装置，其能够有效地抑制断开电流同时抑制导通电流的降低。 显示装置包括绝缘基板和形成在绝缘基板上的薄膜晶体管。 每个薄膜晶体管包括其上形成有栅电极的导电层，形成在导电层上的第一绝缘层，形成在第一绝缘层上并具有形成在栅极上方的第一半导体膜的半导体层 电极，所述第一半导体膜具有在其上表面上彼此间隔开的第一区域和第二区域;第一电极，其经由所述第一区域连接到所述第一半导体膜的上表面;第二电极， 电极，其经由第二区域连接到第一半导体膜的上表面。 被第一半导体膜覆盖的栅电极的一部分配置成比第二区域更靠近第一区域。
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公开(公告)号：US20090050896A1
公开(公告)日：2009-02-26
申请号：US12219900
申请日：2008-07-30
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
CPC分类号： H01L27/1251 , H01L27/1229
摘要： The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+ Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+ Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.
摘要翻译： 本发明提供一种使用由多晶硅制成的底栅型TFT形成驱动电路的显示装置，其在显示区域的周围产生小的漏电流。 栅电极由具有高熔点的Mo制成，栅极绝缘膜形成在栅电极上。 在栅极绝缘膜上形成由多晶硅层构成的沟道层，多晶硅层被a-Si层覆盖。 在a-Si层上形成n + Si层，在n + Si层上形成SD电极。 虽然当向栅电极施加负电压（反向偏压）时，在多晶硅层中感应到空穴，但是空穴不能通过a-Si层，因此不会流过漏极电流。 因此，可以实现产生小漏电流的多晶硅的底栅型TFT。
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公开(公告)号：US07456433B2
公开(公告)日：2008-11-25
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译： 本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。 在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜 并且将植入物施加到前体膜。 这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。 当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。
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公开(公告)号：US20080142803A1
公开(公告)日：2008-06-19
申请号：US12000403
申请日：2007-12-12
申请人： Takuo Kaitoh , Eiji Oue
发明人： Takuo Kaitoh , Eiji Oue
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/1222 , H01L27/1296 , H01L29/04 , H01L29/458 , H01L29/78696
摘要： With the present invention, it is possible to provide a high quality image display by suppressing such faults as malfunction of a circuit or leakage of a current due to hump caused by the characteristic of a thin film transistor at a channel edge portion.An edge portion 302 of a polysilicon layer 301 functioning as a channel layer is converted into a noncrystalline or fine crystalline area. Because a silicon semiconductor film at the channel edge portion 302 is in the fine crystalline or noncrystalline state, a current flowing there is extremely small, or a current does not flow there. Thus, even when a threshold voltage Vth at a channel central portion is different from that at a channel edge portion, performance of the entire thin film transistor film is little affected, so that display faults due to hump are prevented.
摘要翻译： 通过本发明，可以通过抑制电路的故障或由沟道边缘部分的薄膜晶体管的特性引起的由于隆起引起的电流的泄漏而提供高质量的图像显示。 用作沟道层的多晶硅层301的边缘部分302被转换成非结晶或细晶体区域。 由于沟道边缘部302处的硅半导体膜处于微细或非结晶状态，所以流过的电流极小，或者电流不流过。 因此，即使在通道中心部分的阈值电压Vth与通道边缘部分的阈值电压Vth不同时，薄膜晶体管膜整体的性能也受到很小的影响，从而防止由于突起引起的显示故障。
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公开(公告)号：US09128286B2
公开(公告)日：2015-09-08
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US08970940B2
公开(公告)日：2015-03-03
申请号：US13526568
申请日：2012-06-19
CPC分类号： G02B26/0841 , B81B7/007 , B81B2201/045 , B81C2201/0132 , B81C2201/016
摘要： The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
摘要翻译： MEMS快门包括具有开口部分的快门，连接到快门的第一弹簧，连接到第一弹簧的第一锚杆，连接到第二弹簧的第二弹簧和第二锚固件，在挡板的表面上的绝缘膜 所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在垂直于基板表面的方向上，并且所述绝缘膜不存在于所述多个端子的表面上，并且所述表面 所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在与所述基板的表面平行的方向上以及在面向所述基板的所述一侧的相对侧上。
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