公开(公告)号：US20060274983A1

公开(公告)日：2006-12-07

申请号：US11439264

申请日：2006-05-24

申请人： Akira Takahashi ,  Tatsuo Wakabayashi

发明人： Akira Takahashi ,  Tatsuo Wakabayashi

IPC分类号： F16C41/04 ,  F16C32/00

CPC分类号： F16C19/186 ,  F16C19/52 ,  F16C33/723 ,  F16C41/007 ,  F16C41/008 ,  F16C2326/02

摘要： An IC tag 23 is fixed to a central portion of an axially outer end portion face of a hub 10a which is a rotational ring which makes up the wheel supporting bearing unit 5a. Historical information of the wheel supporting bearing unit 5a is stored in the IC tag 23. The historical information stored in the IC tag 23 can be read easily by the use of an external device 28. Due to this, the traceability of the wheel supporting bearing unit 5a can be increased.

摘要翻译： IC标签23固定在构成车轮支撑轴承单元5a的旋转环的轮毂10a的轴向外端部面的中心部分。 轮支撑轴承单元5a的历史信息被存储在IC标签23中。 存储在IC标签23中的历史信息可以通过使用外部设备28容易地读取。 由此，能够提高轮支撑轴承单元5a的可追溯性。

公开(公告)号：US20060269776A1

公开(公告)日：2006-11-30

申请号：US10551159

申请日：2004-03-30

申请人： Koki Tanaka ,  Yoichi Ikematsu ,  Shunichi Hayashi ,  Hideaki Sawada ,  Akira Takahashi ,  Kazuhiko Honda ,  Masayoshi Suehiro ,  Yoshihisa Takada

发明人： Koki Tanaka ,  Yoichi Ikematsu ,  Shunichi Hayashi ,  Hideaki Sawada ,  Akira Takahashi ,  Kazuhiko Honda ,  Masayoshi Suehiro ,  Yoshihisa Takada

IPC分类号： B05D1/18 ,  C23C2/28 ,  C25D5/10

CPC分类号： C23C2/02 ,  C23C2/06 ,  C23C2/28 ,  Y10T428/12799

摘要： The present invention provides an alloyed molten zinc plated steel sheet having an area of the Fe and Zn alloy phase in the unformed parts in the plating layer of less than 10% of the area of the steel sheet as a whole and superior in strength and shapeability and a method of producing this alloyed molten zinc plating steel sheet by a continuous zinc plating production system which enables production at a low cost without modification of the system or addition of steps, said alloyed molten zinc plated steel sheet characterized by comprising a steel sheet including C: 0.05 to 0.40%, Si: 0.2 to 3.0%, and Mn: 0.1 to 2.5%, the balance comprised of Fe and unavoidable impurities, having on its surface a Zn alloy plating layer comprised of Fe in a concentration of 7 to 15 wt %, Al in a concentration of 0.01 to 1 wt %, and the balance of Zn and unavoidable impurities, said plating layer containing oxide particles of at least one type of oxide selected from an Al oxide, Si oxide, Mn oxide, and complex oxides of the same alone or in combination.

摘要翻译： 本发明提供一种合金化的镀锌钢板，其镀层中未成形部分中的Fe和Zn合金相的面积小于钢板整体面积的10％，强度和成形性优良 以及通过连续镀锌生产系统生产该合金化熔融镀锌钢板的方法，其能够在不改变系统或添加步骤的情况下以低成本生产，所述合金化的镀锌钢板的特征在于包括： C：0.05〜0.40％，Si：0.2〜3.0％，Mn：0.1〜2.5％，余量由Fe和不可避免的杂质组成，其表面上含有浓度为7〜15的Fe的Zn合金镀层 重量％，Al为0.01〜1重量％的Al，余量由Zn和不可避免的杂质构成，所述镀层含有选自Al氧化物，Si氧化物，Mn氧化物中的至少一种氧化物的氧化物粒子，以及 相同的复合氧化物单独或组合使用。

公开(公告)号：US20060269078A1

公开(公告)日：2006-11-30

申请号：US11442357

申请日：2006-05-30

申请人： Kosuke Sakamoto ,  Toshio Inoue ,  Akira Takahashi ,  Yasunori Kobayashi

发明人： Kosuke Sakamoto ,  Toshio Inoue ,  Akira Takahashi ,  Yasunori Kobayashi

IPC分类号： A61F11/06 ,  G10K11/16 ,  H03B29/00

CPC分类号： G10K11/178 ,  G10K2210/1282 ,  G10K2210/12821 ,  G10K2210/12822 ,  G10K2210/129 ,  G10K2210/3016 ,  G10K2210/3031 ,  G10K2210/3046 ,  G10K2210/3214 ,  G10K2210/3219

摘要： An active noise/vibration/sound control system for a vehicle has an ANC (active noise control apparatus), an AVC (active vibration control apparatus), and an ASC (active sound control apparatus). To prevent the ANC, the AVC, and the ASC from interfering with each other and hence to prevent vehicle cabin environment of vibrations, noise, and sound from being impaired, activation and inactivation of the ANC, the AVC, and the ASC are controlled or their control characteristics are controlled in relation to each other by a weighting variable calculator as a coordination controller, depending on an engine rotation frequency and a frequency change which are representative of a running state of the vehicle as detected by an engine rotation frequency detector and a frequency change detector that serve as a running state detector.

摘要翻译： 用于车辆的有源噪声/振动/声音控制系统具有ANC（主动噪声控制装置），AVC（主动振动控制装置）和ASC（有源声音控制装置）。 为了防止ANC，AVC和ASC彼此干扰，因此防止车辆的振动，噪声和声音的环境受到损害，ANC，AVC和ASC的激活和失活被控制或 根据由发动机旋转频率检测器检测到的代表车辆行驶状态的发动机旋转频率和频率变化，其控制特性通过作为协调控制器的加权变量计算器彼此相互控制， 频率变化检测器，用作运行状态检测器。

公开(公告)号：US07105438B2

公开(公告)日：2006-09-12

申请号：US11055770

申请日：2005-02-11

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/823475

摘要： In a manufacturing method of a semiconductor device, a metallic gate electrode film, a protective film and an offset nitride film are formed on a semiconductor substrate to compose a stacked structure. An insulating film which covers the stacked structure is etched to expose the offset nitride film, and the exposed offset nitride film is etched to expose the protective film. The exposed protective film may be etched to expose the metallic gate electrode film under predetermined etching conditions. An etching rate of the protective film is greater than that of the metallic gate electrode film. The etching of the insulating film and the etching of the exposed offset nitride film may form a contact hole. A conductive plug is formed in the contact hole.

摘要翻译： 在半导体装置的制造方法中，在半导体基板上形成金属栅电极膜，保护膜和偏移氮化物膜，构成层叠结构。 蚀刻覆盖堆叠结构的绝缘膜，以露出偏移氮化物膜，并且暴露的偏移氮化物膜被蚀刻以露出保护膜。 可以蚀刻暴露的保护膜，以在预定的蚀刻条件下暴露金属栅电极膜。 保护膜的蚀刻速率大于金属栅电极膜的蚀刻速率。 绝缘膜的蚀刻和暴露的偏移氮化物膜的蚀刻可以形成接触孔。 导电插塞形成在接触孔中。

公开(公告)号：US07094333B2

公开(公告)日：2006-08-22

申请号：US10726935

申请日：2003-12-03

申请人： Ralph T. Yang ,  Arturo J. Hernandez-Maldonado ,  Frances H. Yang ,  Akira Takahashi

发明人： Ralph T. Yang ,  Arturo J. Hernandez-Maldonado ,  Frances H. Yang ,  Akira Takahashi

IPC分类号： C10G29/00

CPC分类号： C10G25/05 ,  B01J20/186 ,  C10G25/03

摘要： A method for removing thiophene and thiophene compounds from liquid fuel includes contacting the liquid fuel with an adsorbent which preferentially adsorbs the thiophene and thiophene compounds. The adsorption takes place at a selected temperature and pressure, thereby producing a non-adsorbed component and a thiophene/thiophene compound-rich adsorbed component. The adsorbent includes either a metal or a metal cation that is adapted to form π-complexation bonds with the thiophene and/or thiophene compounds, and the preferential adsorption occurs by π-complexation. A further method includes selective removal of aromatic compounds from a mixture of aromatic and aliphatic compounds.

摘要翻译： 从液体燃料中除去噻吩和噻吩化合物的方法包括使液体燃料与优先吸附噻吩和噻吩化合物的吸附剂接触。 吸附在选定的温度和压力下进行，从而产生非吸附组分和富含噻吩/噻吩化合物的吸附组分。 吸附剂包括适于与噻吩和/或噻吩化合物形成π-络合键的金属或金属阳离子，并且优先吸附通过π-络合而发生。 另一种方法包括从芳族和脂族化合物的混合物中选择性除去芳族化合物。

公开(公告)号：US20060094173A1

公开(公告)日：2006-05-04

申请号：US11311365

申请日：2005-12-20

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/84

CPC分类号： H01L29/66772 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H01L29/78654

摘要： In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, substrate-biasing between an SOI transistor and the silicon substrate is performed via a plug. As a result, the contact hole for the substrate-biasing does not need to pass through an insulating layer, a silicon layer, and an interlayer insulating layer. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can be implanted to the surface of the substrate via the contact hole for substrate biasing. As a result, contact holes for substrate-biasing can be formed without the contact holes for substrate-biasing causing an opening fault.

摘要翻译： 在形成提供给基板的固定电位的接触的绝缘体上硅FET的方法中，通过插头进行SOI晶体管和硅衬底之间的衬底偏置。 结果，用于衬底偏压的接触孔不需要通过绝缘层，硅层和层间绝缘层。 因此，可以使层间绝缘层的深度较浅。 离子可以通过用于衬底偏压的接触孔植入衬底的表面。 结果，可以形成用于基板偏压的接触孔，而不会产生用于基板偏置的接触孔，从而导致打开故障。

公开(公告)号：US07029574B2

公开(公告)日：2006-04-18

申请号：US10393962

申请日：2003-03-21

申请人： Ralph T. Yang ,  Frances H. Yang ,  Akira Takahashi ,  Arturo J. Hernandez-Maldonado

发明人： Ralph T. Yang ,  Frances H. Yang ,  Akira Takahashi ,  Arturo J. Hernandez-Maldonado

IPC分类号： C10G29/10

CPC分类号： B01J20/186 ,  C10G25/03 ,  C10G25/05

摘要： A method for removing thiophene and thiophene compounds from liquid fuel includes contacting the liquid fuel with an adsorbent which preferentially adsorbs the thiophene and thiophene compounds. The adsorption takes place at a selected temperature and pressure, thereby producing a non-adsorbed component and a thiophene/thiophene compound-rich adsorbed component. The adsorbent includes either a metal or a metal ion that is adapted to form π-complexation bonds with the thiophene and/or thiophene compounds, and the preferential adsorption occurs by π-complexation. A further method includes selective removal of aromatic compounds from a mixture of aromatic and aliphatic compounds.

摘要翻译： 从液体燃料中除去噻吩和噻吩化合物的方法包括使液体燃料与优先吸附噻吩和噻吩化合物的吸附剂接触。 吸附在选定的温度和压力下进行，从而产生非吸附组分和富含噻吩/噻吩化合物的吸附组分。 吸附剂包括适于与噻吩和/或噻吩化合物形成π-络合键的金属或金属离子，并且通过π络合发生优先吸附。 另一种方法包括从芳族和脂族化合物的混合物中选择性除去芳族化合物。

公开(公告)号：US20060035096A1

公开(公告)日：2006-02-16

申请号：US10507126

申请日：2003-05-16

申请人： Masayuki Tsutsumi ,  Hisato Kobayashi ,  Keizo Kawahara ,  Shigeto Yoshida ,  Shinsuke Yamaguchi ,  Kazutaka Okamoto ,  Akira Takahashi ,  Eiji Kumagai ,  Akinobu Nagara ,  Yoshiko Akitomo ,  Kazumoto Imai ,  Naonobu Oda

发明人： Masayuki Tsutsumi ,  Hisato Kobayashi ,  Keizo Kawahara ,  Shigeto Yoshida ,  Shinsuke Yamaguchi ,  Kazutaka Okamoto ,  Akira Takahashi ,  Eiji Kumagai ,  Akinobu Nagara ,  Yoshiko Akitomo ,  Kazumoto Imai ,  Naonobu Oda

IPC分类号： B32B27/00

CPC分类号： C08J7/047 ,  C08J2325/06 ,  Y10T428/28 ,  Y10T428/2878 ,  Y10T428/2887 ,  Y10T428/2891 ,  Y10T428/2896 ,  Y10T428/31573 ,  Y10T428/31583 ,  Y10T428/31587 ,  Y10T428/31721 ,  Y10T428/3175 ,  Y10T428/31757 ,  Y10T428/31786 ,  Y10T428/31797 ,  Y10T428/31801 ,  Y10T428/31855 ,  Y10T428/31909 ,  Y10T428/31913 ,  Y10T428/31928 ,  Y10T428/31935 ,  Y10T428/31938

摘要： An oriented syndiotactic polystyrene-based film composed of an oriented film made of a syndiotactic styrene polymer and an adhesiveness-improving layer formed from a specific water-dispersible resin on at least one surface of the oriented film, which is excellent in the tight adhesion between the oriented film and the adhesiveness-improving layer, the adhesion between the adhesiveness-improving layer and an ink layer or laminate layer applied thereon, economical efficiency, recyclability, and environmental compatibility in production. It is particularly preferable that the film be produced by applying the aqueous dispersion of the water-dispersible resin on unstretched or uniaxially stretched film to form the adhesiveness-improving layer, stretching the obtained laminate uni- or bi-axially at least one time, and then heat-treating the resulting laminate.

公开(公告)号：US06995049B2

公开(公告)日：2006-02-07

申请号：US10445859

申请日：2003-05-28

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66772 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H01L29/78654

摘要： In a method for forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via a plug. As a result, a contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer of the structure. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can thus be implanted to the surface of the substrate via the contact hole for substrate-biasing. The contact hole for substrate-biasing can be formed without causing an opening fault.

摘要翻译： 在形成具有向衬底提供固定电位的接触的绝缘体上硅FET的方法中，通过插头来执行SOI晶体管和硅衬底之间的衬底偏置。 结果，用于基板偏置的接触孔不需要通过该结构的绝缘层，硅层和层间绝缘层。 因此，可以使层间绝缘层的深度较浅。 因此，离子可以经由用于衬底偏置的接触孔植入到衬底的表面。 可以形成用于基板偏置的接触孔而不引起打开故障。

公开(公告)号：US06939786B2

公开(公告)日：2005-09-06

申请号：US10779752

申请日：2004-02-18

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device having self-aligned contact structure with side wall spacers and offset nitride films. The method includes forming the side wall spacers as having lower side wall spacers that are composed of silicon oxide films and that are in contact with lower sides of gate electrode side walls, and as having upper side wall spacers that are composed of silicon nitride films and that are in contact with upper sides of the gate electrodes side walls. A distance is thus formed between the device substrate and an interface between the silicon nitride film and the silicon oxide film. This suppresses the hot carrier phenomenon and the occurence of poor contact.

摘要翻译： 一种制造具有侧壁间隔物和偏移氮化物膜的自对准接触结构的半导体器件的方法。 该方法包括将侧壁间隔物形成为具有由氧化硅膜构成并与栅电极侧壁的下侧接触的下侧壁间隔物，以及具有由氮化硅膜构成的上侧壁间隔物， 其与栅电极侧壁的上侧接触。 因此在器件基板和氮化硅膜与氧化硅膜之间的界面之间形成距离。 这样就抑制了热载体现象和接触不良的发生。