公开(公告)号：US06649021B2

公开(公告)日：2003-11-18

申请号：US09908844

申请日：2001-07-20

申请人： Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

发明人： Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

IPC分类号： H01L2100

CPC分类号： H01J37/32706

摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

公开(公告)号：US06610171B2

公开(公告)日：2003-08-26

申请号：US10107353

申请日：2002-03-28

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H05H100

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

公开(公告)号：US06524428B2

公开(公告)日：2003-02-25

申请号：US09849405

申请日：2001-05-07

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： C23C1600

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

公开(公告)号：US06482747B1

公开(公告)日：2002-11-19

申请号：US09218038

申请日：1998-12-22

申请人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

发明人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

IPC分类号： H01L213065

CPC分类号： C23F4/00 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3322 ,  H01L21/32136 ,  H01L21/6875

摘要： Plasma treatment apparatus and method in which an influence on the treatment characteristics of reaction products in plasma treatment such as etching is offset, thereby enabling uniform treatment characteristics to be obtained in the plane of a substrate are provided. In a plasma treatment method of treating a substrate to be processed by using a gas plasma via a mask in a treatment chamber, plasma treatment is performed while optimizing an amount of deposition of a side wall protection layer, equalizing the optimized deposition amount in the center of the substrate and that in a peripheral part, and maintaining the uniformity in the plane of the side wall protection layer.

摘要翻译： 提供了等离子体处理装置和方法，其中对诸如蚀刻的等离子体处理中的反应产物的处理特性的影响被偏移，从而能够在基板的平面中获得均匀的处理特性。 在处理室中经由掩模使用气体等离子体处理待处理基板的等离子体处理方法中，在优化侧壁保护层的沉积量的同时进行等离子体处理，使中心的最佳沉积量均匀化 并且保持在侧壁保护层的平面中的均匀性。

公开(公告)号：US06336991B1

公开(公告)日：2002-01-08

申请号：US09109178

申请日：1998-07-02

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： C23C1600

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

摘要翻译： 在保持基板和基板保持系统的方法中，可以减少基板的背面上的异物量，并且只有少量的异物从安装台传递到基板。 为此，基板保持系统具有环形防漏表面，在对应于基板的周边的样品台上提供平滑的支撑表面，多个接触保持部分抵靠在样品台上的基板上， 与基板的周边相对应的位置以及与基板的中心对应的位置，以及静电引导装置，用于通过使基板的背面与环状防漏面接触而固定基板，以及接触保持部 。 将基板暴露于环状防漏表面处的冷却表面和位于环形防漏表面内的位置处的接触保持部。 基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

公开(公告)号：US06221201B1

公开(公告)日：2001-04-24

申请号：US09108835

申请日：1998-07-02

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H05H100

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

公开(公告)号：US6048434A

公开(公告)日：2000-04-11

申请号：US670180

申请日：1996-06-20

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  C23F1/02 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： A substrate holding system is provided for holding a substrate in a substrate etching apparatus by using electrostatic force. An electrical insulating member is also provided having a top surface approximately at the same level as the treated surface of the substrate and having an inner side surface in adjacent relationship with a surface of the substrate forming the periphery of the substrate. The inner side surface of the electrical insulating member faces the periphery of the substrate in substantially parallel relationship with a direction normal to the treated surface of the substrate. A dielectric film is formed on one surface of a metallic member having a flow passage for circulating a coolant to control the temperature of the substrate. An electrically insulating material member is placed on and in contact with a surface of the metallic member. An electrically conductive material member grounded to a standard electric potential is placed on and in contact with a surface of the electrically insulating material member. Three kinds of members are overlaid and fixed to each other in order of the metallic member having the dielectric film, the electrically insulating material member and the standard electric potential member. A coolant hole penetrates from the standard electric potential member side to the coolant flow passage of the metallic member being formed, at least three through holes penetrating the three kinds of members being formed and movable members linked to a substrate transporting mechanism being inserted in the through holes.

摘要翻译： 提供了通过使用静电力将基板保持在基板蚀刻装置中的基板保持系统。 还提供一种电绝缘构件，其具有与基板的处理表面大致相同水平面的顶表面，并且具有与形成基板周边的基板的表面相邻的内侧表面。 电绝缘构件的内侧表面基本上与基板的被处理表面垂直的方向平行。 在具有用于循环冷却剂的流路的金属构件的一个表面上形成电介质膜以控制衬底的温度。 电绝缘材料构件放置在金属构件的表面上并与金属构件的表面接触。 接地到标准电位的导电材料构件放置在电绝缘材料构件的表面上并与电绝缘材料构件的表面接触。 按照具有电介质膜的金属构件，电绝缘材料构件和标准电位构件的顺序将三种构件重叠并固定。 冷却剂孔从标准电位部件侧穿过形成的金属部件的冷却剂流路，至少形成贯通形成有三个部件的3个贯通孔，与基板传送机构连结的可动部件插入贯通孔 孔。

公开(公告)号：US5697751A

公开(公告)日：1997-12-16

申请号：US445863

申请日：1995-05-22

申请人： Kazue Takahashi

发明人： Kazue Takahashi

IPC分类号： B65G49/07 ,  C23C14/56 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6838 ,  Y10S414/136 ,  Y10T29/41

摘要： Transfer and processing of semiconductor wafers are performed while maintaining the wafer surfaces in a vertical orientation by holding the water substrate with electrostatic chucking of the rear face thereof. Thereby, the floor area of the transfer and processing system becomes almost the same regardless of the wafer size. Because only the back of the wafer comes in contact with a transfer member, the wafer front surface is kept clean and moreover wafer transfer can be done quickly.

摘要翻译： 通过用其后表面的静电夹持来保持水基板，同时保持晶片表面处于垂直取向的同时进行半导体晶片的转移和处理。 因此，无论晶片尺寸如何，转印和处理系统的底面积变得几乎相同。 因为只有晶片的背面与转印部件接触，所以晶片正面保持清洁，而且可以快速地进行晶片转印。

公开(公告)号：US5536359A

公开(公告)日：1996-07-16

申请号：US309409

申请日：1994-09-20

申请人： Hiroki Kawada ,  Kazue Takahashi ,  Manabu Edamura ,  Saburo Kanai ,  Naoyuki Tamura

发明人： Hiroki Kawada ,  Kazue Takahashi ,  Manabu Edamura ,  Saburo Kanai ,  Naoyuki Tamura

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32862 ,  H01J37/32935 ,  H01J37/32972 ,  H01J2237/022

摘要： A semiconductor device manufacturing apparatus and its method, measures the amount or chemical composition of reaction products adhering to or deposited on the inside of a processing chamber of the semiconductor device manufacturing apparatus, without exposing the chamber to the air. External light, such as infrared light, is introduced from a light introducing unit into the processing chamber. A light receiving unit provided outside the processing chamber receives light reflected from a specified location inside the processing chamber or light reflected from an arbitrary location inside the chamber. The received light is then subjected to spectrometry or photometry to judge how badly the chamber is contaminated and to judge the state of the process being carried out.

摘要翻译： 一种半导体器件制造装置及其方法，用于测量粘附或沉积在半导体器件制造装置的处理室内部的反应产物的量或化学组成，而不将该室暴露于空气。 诸如红外光的外部光从光引入单元引入处理室。 设置在处理室外部的光接收单元接收从处理室内的指定位置反射的光或从室内的任意位置反射的光。 然后将接收的光进行光谱测定或光度测定，以判断室被污染的程度如何，并判断正在进行的过程的状态。

公开(公告)号：US20090289035A1

公开(公告)日：2009-11-26

申请号：US12534491

申请日：2009-08-03

申请人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

发明人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

IPC分类号： H01L21/3065 ,  C23C16/513

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table by electrostatic force, a specimen table cover arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface for cooling the specimen, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover.

摘要翻译： 一种等离子体处理装置和方法，其包括真空处理室，等离子体产生单元，处理气体供应单元，样品台和真空泵送单元。 样本台包括用于通过静电力将样本保持在样品台的保持表面上的静电装置，设置在样本台周围的样本台盖以及第一和第二传热气体供应单元。 第一传热气体供给单元具有用于向试样保持面供给传热气体以冷却试样的主路径，第二传热气体供给单元具有从第一传热气体的主路径分支的分支路径 供应单元，用于将一部分传热气体供应到样品保持表面的外部与样品台盖之间的间隙。