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公开(公告)号：US07767020B2
公开(公告)日：2010-08-03
申请号：US10589587
申请日：2005-02-18
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , C30B15/305 , C30B29/06 , Y10T117/1056 , Y10T117/1068
摘要： A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (6), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor (6) is reduced. Especially, a width of speed fluctuation (ΔV) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor (6) becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt (5).
摘要翻译： 一种用于制造单晶半导体的方法，其中在将单晶半导体从用于生长的熔体中提取单个晶体的过程中，杂质更均匀地结合到单晶半导体中，使得跨越半导体晶片的杂质浓度的变化 可以减少表面，从而可以提高晶片的平面性。 在提升单晶半导体（6）的过程中，控制上拉速度的波动，从而降低单晶半导体（6）中杂质浓度的变化。 特别地，将10秒内的速度波动（＆Dgr; V）的宽度调整为小于0.025mm / min。 此外，在进行用于调节上升速度使得单晶半导体（6）的直径成为期望直径的控制时，对熔体（5）施加强度为1500高斯或更高的磁场。
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公开(公告)号：US07614392B2
公开(公告)日：2009-11-10
申请号：US12033525
申请日：2008-02-19
申请人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Kunihiko Takamatsu , Masaki Hirata , Takahiro Suzuki
发明人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Kunihiko Takamatsu , Masaki Hirata , Takahiro Suzuki
IPC分类号： F02D41/22
CPC分类号： F02D41/1456 , F02D41/123 , F02D41/126 , F02D41/1495 , F02D2250/14 , G01N27/4175
摘要： A gas sensor diagnostic method includes: a fuel supply detecting step of detecting an interruption of a fuel supply to the internal combustion engine, and a restart of the fuel supply after the interruption of the fuel supply; a response time period accumulating step of determining a response time period by accumulating a first time period that the sensor output value reaches from a first threshold value to a second threshold value after the detection of the interruption of the fuel supply, and a second time period that the sensor output value reaches from a third threshold value to a fourth threshold value after the detection of the restart of the fuel supply after the interruption of the fuel supply; and an abnormal state diagnosing section of determining an abnormal state of the gas sensor when the response time period is greater than a predetermined time period.
摘要翻译： 一种气体传感器诊断方法，包括：燃料供给检测步骤，检测对内燃机的燃料供给的中断，以及在燃料供给中断之后重新启动燃料供给; 响应时间累积步骤，通过在检测到燃料供给中断之后，将传感器输出值从第一阈值到达第一阈值的第一时间段确定为响应时间段，以及第二时间段 在燃料供应中断之后检测到燃料供应的重新启动之后，传感器输出值从第三阈值到达第四阈值; 以及异常状态诊断部，其在所述响应时间段大于预定时间段时确定所述气体传感器的异常状态。
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公开(公告)号：US20090229343A1
公开(公告)日：2009-09-17
申请号：US12402012
申请日：2009-03-11
IPC分类号： G01N7/00
CPC分类号： G01N27/4065 , G01N1/2252
摘要： In a sensor control apparatus (2), a GND1 terminal for signal-system circuits and a GND2 terminal for a power-system circuit are separately provided in an external circuit terminal section (31). The ground for the drive circuit of the power system and the ground for the drive circuits of the signal system are disposed independently of each other on a circuit board (20). Further, a first electrical path for connecting the circuit board (20) and an engine control unit is provided independently of a second electrical path for connecting the circuit board (20) and a battery. Therefore, even when a heater control circuit (28) is turned ON, the influence of heater current on an Ip1 cell/Vs cell control circuit (26), an Ip2 cell control circuit (27), and a CAN (Controller Area Network) circuit (29) can be suppressed. Further, since the ground for the sensor-system circuit and the ground for the CAN circuit (29) are rendered common, the layout of the ground wring can be simplified.
摘要翻译： 在传感器控制装置（2）中，用于信号系统电路的GND1端子和用于电力系统电路的GND2端子分别设置在外部电路端子部（31）中。 用于电力系统的驱动电路和信号系统的驱动电路的地的接地在电路板（20）上彼此独立地设置。 此外，独立于用于连接电路板（20）和电池的第二电路设置用于连接电路板（20）和发动机控制单元的第一电路。 因此，即使加热器控制电路（28）接通，加热器电流对Ip1单元/ Vs单元控制电路（26），Ip2单元控制电路（27）和CAN（控制器局域网络） 可以抑制电路（29）。 此外，由于用于传感器系统电路的接地和CAN电路（29）的接地是共同的，因此可以简化接地线的布局。
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公开(公告)号：US07481094B2
公开(公告)日：2009-01-27
申请号：US11393840
申请日：2006-03-31
申请人： Hiroshi Inagaki
发明人： Hiroshi Inagaki
CPC分类号： F02D41/222 , F02D35/021 , F02D41/1443 , F02D41/1495 , G01N27/4065 , G01N33/0031 , G01N33/0063 , Y02T10/40
摘要： A gas sensor control unit (1) including a single signal-switching and outputting circuit (33) adapted for switching and outputting plural signals transmitted from plural gas sensors (8,9).
摘要翻译： 一种气体传感器控制单元（1），包括适于切换和输出从多个气体传感器（8,9）发送的多个信号的单个信号切换和输出电路（33）。
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公开(公告)号：US07396406B2
公开(公告)日：2008-07-08
申请号：US10588533
申请日：2004-02-09
IPC分类号： C30B15/20
CPC分类号： C30B15/14 , C30B15/22 , C30B15/305 , C30B29/06 , C30B30/04 , Y10S117/917 , Y10T117/10 , Y10T117/1016 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal (14) and the size (diameter D) of the seed crystal (14). When the seed crystal (14) comes into contact with the melt (5), electric power supplied to a bottom heater (19) is fixed, and a magnetic field produced by a magnet (20) is applied to the melt (5). Electric power supplied to a main heater (9) is controlled so that the temperature at the surface of the melt (5) which the seed crystal (14) comes into contact with may be a target value. After the seed crystal (14) comes into contact with the melt (5), single crystal silicon is pulled up without performing a necking process.
摘要翻译： 一种单晶半导体制造方法，用于在晶种与熔体接触的同时，在不改变或几乎不变化供给加热器的电力的情况下实现无位错单晶。 根据添加到晶种（14）中的杂质浓度（C）和晶种（14）的尺寸（直径D）来确定晶种中不产生位错的允许温差DeltaTc。 当籽晶（14）与熔体（5）接触时，提供给底部加热器（19）的电力被固定，并且由磁体（20）产生的磁场被施加到熔体（5）。 控制提供给主加热器（9）的电力使得晶种（14）接触的熔体（5）的表面处的温度可以是目标值。 在籽晶（14）与熔体（5）接触之后，单晶硅被拉起而不进行缩颈处理。
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56.发明申请GAS SENSOR SYSTEM WITH FAILURE DIAGNOSTIC FUNCTION AND FAILURE DIAGNOSIS METHOD FOR GAS SENSOR SYSTEM 有权具有故障诊断功能和气体传感器系统故障诊断方法的气体传感器系统公开(公告)号：US20070273540A1
公开(公告)日：2007-11-29
申请号：US11748720
申请日：2007-05-15
CPC分类号： G01N27/407 , G01N27/4175
摘要： A gas sensor system includes a gas sensor capable of producing an output signal responsive to the concentration of a specific gas component in measurement gas, a gas concentration determination device that makes electrical connections to the gas sensor and determines the concentration of the specific gas component according to the output signal of the gas sensor, a failure detection device that detects a potential failure in any one of the electrical connections, a sensor temperature determination device that judges whether the gas sensor has been cooled to a predetermined temperature or lower with reference to a sensor temperature parameter and a failure identification device that, when the gas sensor has been cooled to the predetermined temperature or lower, outputs a diagnosis signal to the gas sensor, measures potentials of the electrical connections under the diagnosis signal and identifies in which of the electrical connections the potential failure is occurring based on the measured potentials.
摘要翻译： 一种气体传感器系统，包括能够响应于测量气体中的特定气体成分的浓度而产生输出信号的气体传感器，气体浓度确定装置，其与气体传感器进行电连接，并且确定特定气体成分的浓度，根据 涉及气体传感器的输出信号，检测任何一个电气连接中的潜在故障的故障检测装置，传感器温度判定装置，其判断气体传感器是否已经被冷却到预定温度或更低温度 传感器温度参数和故障识别装置，当气体传感器已经被冷却到预定温度或更低温度时，向气体传感器输出诊断信号，测量诊断信号下的电气连接的电位，并识别哪个电气 连接潜在的故障正在发生，基于测量 有潜力
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公开(公告)号：US20070256625A1
公开(公告)日：2007-11-08
申请号：US11809357
申请日：2007-05-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译： 在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。 此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。 为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面 破折号的脖子法。
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公开(公告)号：US20070193500A1
公开(公告)日：2007-08-23
申请号：US10589587
申请日：2005-02-18
IPC分类号： C30B11/00
CPC分类号： C30B15/20 , C30B15/305 , C30B29/06 , Y10T117/1056 , Y10T117/1068
摘要： A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (6), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor (6) is reduced. Especially, a width of speed fluctuation (ΔV) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor (6) becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt (5).
摘要翻译： 一种用于制造单晶半导体的方法，其中在将单晶半导体从用于生长的熔体中提取单个晶体的过程中，杂质更均匀地结合到单晶半导体中，使得跨越半导体晶片的杂质浓度的变化 可以减少表面，从而可以提高晶片的平面性。 在提升单晶半导体（6）的过程中，控制上拉速度的波动，从而减小单晶半导体（6）中杂质浓度的变化。 特别地，10秒内的速度波动（DeltaV）的宽度被调整为小于0.025mm / min。 此外，在进行用于调节上升速度使得单晶半导体（6）的直径成为期望直径的控制时，对熔体（5）施加强度为1500高斯或更高的磁场。
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公开(公告)号：US20070157871A1
公开(公告)日：2007-07-12
申请号：US10588533
申请日：2004-02-09
CPC分类号： C30B15/14 , C30B15/22 , C30B15/305 , C30B29/06 , C30B30/04 , Y10S117/917 , Y10T117/10 , Y10T117/1016 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal (14) and the size (diameter D) of the seed crystal (14). When the seed crystal (14) comes into contact with the melt (5), electric power supplied to a bottom heater (19) is fixed, and a magnetic field produced by a magnet (20) is applied to the melt (5). Electric power supplied to a main heater (9) is controlled so that the temperature at the surface of the melt (5) which the seed crystal (14) comes into contact with may be a target value. After the seed crystal (14) comes into contact with the melt (5), single crystal silicon is pulled up without performing a necking process.
摘要翻译： 一种单晶半导体制造方法，用于在晶种与熔体接触的同时，在不改变或几乎不变化供给加热器的电力的情况下实现无位错单晶。 根据添加到晶种（14）中的杂质浓度（C）和晶种（14）的尺寸（直径D）来确定晶种中不产生位错的允许温差DeltaTc。 当籽晶（14）与熔体（5）接触时，提供给底部加热器（19）的电力被固定，并且由磁体（20）产生的磁场被施加到熔体（5）。 控制提供给主加热器（9）的电力使得晶种（14）接触的熔体（5）的表面处的温度可以是目标值。 在籽晶（14）与熔体（5）接触之后，单晶硅被拉起而不进行缩颈处理。
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公开(公告)号：US07155890B2
公开(公告)日：2007-01-02
申请号：US10479973
申请日：2002-06-11
IPC分类号： B65H69/06
CPC分类号： D01F9/32 , B65H69/061 , B65H2701/314
摘要： A production device and production method for carbon fibers of the present invention is utilized to reliably obtain a connecting portion having a high process passing property with a simple mechanism so as to achieve a continuous operation and improve a firing process operability for achieving a low cost. A pair of yarn gripping devices for overlaying precursor fiber yarns to be connected one upon another and gripping the overlaid ends is provided, and a fluid processing unit for applying an entangling process by jetting a plurality of rows of fluid in along a yarn length direction is provided between the pair of yarn gripping devices. A plurality of discontinuous thread handling areas of the precursor fiber yarns in a fluid jet area of the fluid processing unit having fluid jet holes are disposed at predetermined intervals.
摘要翻译： 采用本发明的碳纤维的制造装置和制造方法，通过简单的机构可靠地获得具有高工艺通过性的连接部，以实现连续的动作，提高烧成工序的可操作性，实现低成本。 提供一对纱线夹持装置，用于将前端纤维纱线叠加并夹紧重叠的端部，并且用于通过沿着纱线长度方向喷射多排流体来进行缠结处理的流体处理单元是 设置在一对纱线夹持装置之间。 具有流体喷射孔的流体处理单元的流体喷射区域中的前体纤维纱线的多个不连续的纱线处理区域以预定间隔布置。
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