公开(公告)号：US6129044A

公开(公告)日：2000-10-10

申请号：US409477

申请日：1999-10-06

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

公开(公告)号：US5983644A

公开(公告)日：1999-11-16

申请号：US939926

申请日：1997-09-29

申请人： Hooman Bolandi ,  Avi Tepman

发明人： Hooman Bolandi ,  Avi Tepman

IPC分类号： H01L21/027 ,  H01L21/00 ,  F25B21/02

CPC分类号： H01L21/67103

摘要： A method and apparatus for providing integrated bake and chill thermal cycling applied to a material substrate is provided. The apparatus is a module comprising an integrated bake and chill plate with one or more fluid channels in a generally spiraling arrangement. The fluid channels have inlets and outlets near the center and perimeter of the integrated bake and chill plate. Additionally, the fluid channels can have microchannels through portions thereof. The module can also comprise one or more thermoelectric devices, a thermally conductive plate on which the substrate directly or indirectly rests, a printed circuit board, and a variable power source. The integrated bake and chill plate, the thermally conductive plate and the thermoelectric devices are all in thermal contact with each other. The thermoelectric devices are also in electrical contact with the variable power source and comprise a top plate, a bottom plate, a support positioned between the top and bottom plates, and one or more copper pads beneath the bottom plate for establishing electrical contact. The module bakes and chills a substrate by flowing fluids of different temperatures through the generally spiraling fluid channels and adjusting the temperature of the thermoelectric devices according to a preprogrammed cycle. Different fluid flow patterns can be chosen where fluid enters near the center of the integrated bake and chill plate and drains near the perimeter, where fluid enters near the perimeter and drains near the center, or where the two patterns are combined.

摘要翻译： 提供了一种用于提供应用于材料基底的集成烘烤和冷却热循环的方法和装置。 该装置是包括具有一个或多个流体通道的集成烘烤和冷却板的模块，其大致螺旋形布置。 流体通道在集成烘烤和冷却板的中心和周边附近具有入口和出口。 此外，流体通道可以通过其一部分具有微通道。 该模块还可以包括一个或多个热电装置，基板直接或间接放在其上的导热板，印刷电路板和可变电源。 集成的烘烤和冷却板，导热板和热电装置都彼此热接触。 热电装置也与可变电源电接触，并且包括顶板，底板，位于顶板和底板之间的支撑以及底板下方的一个或多个铜焊盘，用于建立电接触。 该模块通过使不同温度的流体通过通常的螺旋形流体通道流动并根据预编程循环调节热电装置的温度来烘烤和冷却基板。 可以选择不同的流体流动模式，其中流体在集成烘烤和冷却板的中心附近进入并且在周边附近排出，其中流体在周边附近进入并在中心附近排水，或者两个图案组合在一起。

公开(公告)号：US5907220A

公开(公告)日：1999-05-25

申请号：US615771

申请日：1996-03-13

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subseguent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

摘要翻译： 一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制 主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在溅射的次级高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。 溅射的高压相的压力高于溅射的低压相的压力。

公开(公告)号：US5868847A

公开(公告)日：1999-02-09

申请号：US358161

申请日：1994-12-16

申请人： Aihua Chen ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  Igor Kogan

发明人： Aihua Chen ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  Igor Kogan

IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68721 ,  C23C14/50 ,  C23C16/4585

摘要： A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a clamp ring suspended in the chamber on a chamber shield. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the clamp ring off the shield. After deposition is complete, the support member retracts through the shield, to reposition the clamp on the shield. In the event that a deposition material layer has formed between the substrate and the clamp ring, the clamp ring includes a plurality of actuators thereon which force the substrate out of the clamp ring as the clamp ring is repositioned on the shield.

摘要翻译： 用于在衬底上沉积膜层的腔室包括支撑构件，衬底被定位在其上用于在腔室中进行处理，以及在室屏蔽罩上悬挂在腔室中的夹紧环。 支撑构件可定位在腔室中以在其上接收衬底，并且还可定位成使衬底穿过屏蔽件，从而将夹紧环提离屏蔽。 沉积完成后，支撑构件通过屏蔽件缩回，以将夹具重新定位在屏蔽上。 在衬底和夹紧环之间形成沉积材料层的情况下，夹紧环包括多个致动器，当钳位环重新定位在屏蔽上时，该致动器迫使衬底离开夹紧环。

公开(公告)号：USD400511S

公开(公告)日：1998-11-03

申请号：US52010

申请日：1996-03-21

申请人： Avi Tepman

设计人： Avi Tepman

公开(公告)号：USD381030S

公开(公告)日：1997-07-15

申请号：US47081

申请日：1995-11-21

申请人： Avi Tepman

设计人： Avi Tepman

公开(公告)号：US5516403A

公开(公告)日：1996-05-14

申请号：US357695

申请日：1994-12-16

申请人： John Forster ,  James S. Van Gogh ,  Avi Tepman

发明人： John Forster ,  James S. Van Gogh ,  Avi Tepman

IPC分类号： C23C14/34 ,  C23C14/56 ,  H01J37/34 ,  H01L21/203

CPC分类号： H01J37/3447 ,  C23C14/34 ,  C23C14/564 ,  H01J37/34

摘要： A sputtering apparatus deposits a layer of material on a substrate. The apparatus includes a screening member, such as a plate collimator or a tube collimator, located between the target and substrate. A motor drive reverses the respective positions of the two opposite sides of the screening device which respectively face the substrate and the target.

摘要翻译： 溅射装置在衬底上沉积一层材料。 该装置包括位于靶和衬底之间的屏蔽构件，例如板准直器或管准直器。 电动机驱动器反转分别面对基板和目标的屏蔽装置的两个相对侧的相应位置。

公开(公告)号：US5484011A

公开(公告)日：1996-01-16

申请号：US289989

申请日：1994-08-12

申请人： Avi Tepman ,  Howard Grunes ,  Dana Andrews

发明人： Avi Tepman ,  Howard Grunes ,  Dana Andrews

IPC分类号： C23C14/50 ,  H01J37/32 ,  H01L21/00 ,  H01L21/687 ,  H01L21/02

CPC分类号： H01L21/68721 ,  C23C14/50 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32862 ,  H01L21/67069 ,  Y10T29/41

摘要： A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few contact regions of the interface between the wafer and clamp from receiving depositing particles so that a coating formed on the wafer makes continuous contact with the clamping ring in only a few narrow regions that act as conductive bridges when the depositing layer is conductive.

摘要翻译： 用于将晶片夹持到压板并调节晶片的温度的夹紧环和温度调节压板。 夹紧环抵靠晶片的力由夹紧环的重量产生。 屋顶屏蔽来自接收沉积颗粒的晶片和夹具之间的接口的所有除了几个接触区域，使得形成在晶片上的涂层在仅存在几个狭窄区域中与夹紧环连续接触，当狭缝区域当存在 层是导电的。

公开(公告)号：US5380414A

公开(公告)日：1995-01-10

申请号：US75259

申请日：1993-06-11

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC分类号： H01J37/32862 ,  C23C14/34 ,  C23C14/564

摘要： A deposition chamber includes a target and an acceptor for supporting a wafer during a deposition cycle. The acceptor is made out of a pasting material in order that a pasting cycle can be run periodically in the deposition chamber to form a barrier between the layers of the target material to prevent the layer of target material from becoming too thick and thereby cracking and flaking. A shield protects the interior of the chamber during a deposition cycle. A collimator may be present between the target and the acceptor. A plasma is formed in the chamber and selectively attracted toward the target for deposition of target material onto a wafer or toward the acceptor for pasting acceptor material onto the shield and the bottom of the collimator, if present. A plurality of wafers are cycled through the deposition chamber for depositing the deposition material on their surface. After the plurality of wafers, a pasting cycle is run, depositing the pasting material around the interior of the shield, on the collimator and on the target. The target is then cleaned of pasting material while using a dummy wafer in the deposition chamber.

摘要翻译： 沉积室包括靶和用于在沉积循环期间支撑晶片的受体。 受体由粘贴材料制成，以便可以在沉积室中周期性地运行粘贴循环，以在目标材料层之间形成阻挡层，以防止目标材料层变得太厚，从而破裂和剥落 。 屏蔽在沉积循环期间保护室的内部。 目标和受体之间可能存在准直仪。 在室中形成等离子体并选择性地朝向靶吸附，以将目标材料沉积到晶片上或朝向受体，以将受体材料粘贴到屏蔽件和准直仪的底部（如果存在）上。 多个晶片循环通过沉积室，用于在其表面上沉积沉积材料。 在多个晶片之后，运行粘贴循环，将粘贴材料围绕屏蔽件的内部，准直器和目标物体沉积。 然后在沉积室中使用伪晶片的同时清除目标物的粘贴材料。

公开(公告)号：US5186718A

公开(公告)日：1993-02-16

申请号：US685976

申请日：1991-04-15

申请人： Avi Tepman ,  Howard Grunes ,  Sasson Somekh ,  Dan Maydan

发明人： Avi Tepman ,  Howard Grunes ,  Sasson Somekh ,  Dan Maydan

IPC分类号： H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67167 ,  H01L21/67184 ,  H01L21/67742 ,  Y10S148/006 ,  Y10S148/169 ,  Y10T29/41 ,  Y10T29/413

摘要： A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chambers to facilitate the use of a very high degree of vacuum in the processing chambers without lengthy pump down times. Separate robot chambers are associated with the vacuum processing chambers and the load lock(s). In addition, separate transport paths are provided between the two robot chambers to facilitate loading and unloading of workpieces. Pre-treatment and post-treatment chambers may be incorporated in the two transport paths.

摘要翻译： 公开了一种用于诸如半导体晶片的工件的处理系统，其在盒加载锁定站和主真空处理室之间并入多个隔离的真空级。 在盒式加载锁和主处理室之间施加真空梯度，以便在处理室中使用非常高的真空度，而不需要冗长的抽空时间。 分离的机器人腔室与真空处理室和负载锁相关联。 另外，在两个机器人室之间提供单独的输送路径，以便于加工和卸载工件。 预处理和后处理室可以并入两个运输路径中。