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    Apparatus for substrate processing with improved throughput and yield
    4.
    发明授权
    Apparatus for substrate processing with improved throughput and yield 有权
    用于基板处理的装置，具有改善的生产量和产量

    公开(公告)号：US6129044A

    公开(公告)日：2000-10-10

    申请号：US409477

    申请日：1999-10-06

    申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

    发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

    CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

    摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

    摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

    High temperature, high flow rate chemical vapor deposition apparatus and related methods
    5.
    发明授权
    High temperature, high flow rate chemical vapor deposition apparatus and related methods 失效
    高温，高流量化学气相沉积装置及相关方法

    公开(公告)号：US06189482B1

    公开(公告)日：2001-02-20

    申请号：US08799415

    申请日：1997-02-12

    申请人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

    发明人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

    IPC分类号： C23C1600

    CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

    摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

    Chemical vapor deposition hardware and process
    6.
    发明授权
    Chemical vapor deposition hardware and process 失效
    化学气相沉积硬件和工艺

    公开(公告)号：US06296712B1

    公开(公告)日：2001-10-02

    申请号：US09055689

    申请日：1998-04-06

    申请人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

    发明人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

    IPC分类号： C23C1600

    CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/68735

    摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

    摘要翻译： 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

    Apparatus for electro-chemical deposition with thermal anneal chamber
    8.
    发明授权
    Apparatus for electro-chemical deposition with thermal anneal chamber 有权
    具有热退火室的电化学沉积设备

    公开(公告)号：US6136163A

    公开(公告)日：2000-10-24

    申请号：US263126

    申请日：1999-03-05

    申请人： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

    发明人： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

    IPC分类号： B65G49/07 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  C25D17/00 ,  C25B9/00 ,  C25B15/00

    CPC分类号： H01L21/6723 ,  C25D17/001 ,  H01L21/67098

    摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.

    摘要翻译： 本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元， 以及流体连接到所述一个或多个电处理单元的电解质供应。 本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。 优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

    Etch chamber
    9.
    发明授权
    Etch chamber 失效
    蚀刻室

    公开(公告)号：US06270621B1

    公开(公告)日：2001-08-07

    申请号：US09593018

    申请日：2000-06-13

    申请人： Simon W. Tam ,  Semyon Sherstinsky ,  Mei Chang ,  Alan Morrison ,  Ashok Sinha

    发明人： Simon W. Tam ,  Semyon Sherstinsky ,  Mei Chang ,  Alan Morrison ,  Ashok Sinha

    IPC分类号： H01L2100

    CPC分类号： H01L21/68721 ,  H01J2237/022 ,  H01L21/68785

    摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.

    摘要翻译： 修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。 腔室中的夹紧环盖由陶瓷制成。 槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。 用于被处理的基板的夹紧环也由陶瓷制成。 通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。 此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板 处理。 使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。