公开(公告)号：US20080062574A1

公开(公告)日：2008-03-13

申请号：US11898079

申请日：2007-09-07

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/0002 ,  G11C11/16 ,  H01L43/08 ,  Y10T428/1107

摘要： A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between said first magnetic layer and said second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of said first magnetic layer, said second magnetic layer and said intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.

摘要翻译： 磁阻效应元件包括其磁化方向固定的第一磁性层; 磁化方向固定的第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的中间层; 以及一对电极，用于垂直于由所述第一磁性层，所述第二磁性层和所述中间层构成的所得叠层体的膜表面流动电流。 中间层包括绝缘部分和含有选自Fe，Co，Ni，Cr中的至少一种的金属部分，金属部分与第一磁性层和第二磁性层接触。

公开(公告)号：US20080005891A1

公开(公告)日：2008-01-10

申请号：US11822435

申请日：2007-07-05

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/39 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a fixed magnetization layer; forming a free magnetization layer; and forming a spacer layer with an insulating layer and a non-magnetic metallic path penetrating through the insulating layer, includes: forming a first non-magnetic metallic layer; forming, a metallic layer on a surface of the first non-magnetic metallic layer; irradiating, onto the metallic layer, ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, kr so as to convert the metallic layer into the insulating layer and the non-magnetic metallic path containing the first non-magnetic metallic layer; forming a second non-magnetic metallic layer on the non-magnetic metallic path; and irradiating ions or plasma onto at least one of the fixed magnetization layer, the first metallic layer, the metallic layer, the insulating layer converted from the second metallic layer and the second non-magnetic metallic layer.

摘要翻译： 制造磁阻效应元件的方法包括：形成固定磁化层; 形成自由磁化层; 以及形成具有穿过所述绝缘层的绝缘层和非磁性金属路径的间隔层，包括：形成第一非磁性金属层; 在所述第一非磁性金属层的表面上形成金属层; 在金属层上照射包括氧和氮中的至少一种的离子或等离子体，以及选自Ar，Xe，He，Ne，kr中的至少一种，以将金属层转化成绝缘层， 含有第一非磁性金属层的非磁性金属路径; 在非磁性金属路径上形成第二非磁性金属层; 并且将离子或等离子体照射到固定磁化层，第一金属层，金属层，从第二金属层转换的绝缘层和第二非磁性金属层中的至少一个上。

公开(公告)号：US20070092639A1

公开(公告)日：2007-04-26

申请号：US11583968

申请日：2006-10-20

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： B05D5/12

CPC分类号： C23C8/02 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C8/34 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  C23C28/42 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/305

摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.

摘要翻译： 提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。 该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化 将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。

公开(公告)号：US08351164B2

公开(公告)日：2013-01-08

申请号：US13454846

申请日：2012-04-24

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39 ,  G11C11/16

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。 第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。

公开(公告)号：US08256095B2

公开(公告)日：2012-09-04

申请号：US12871593

申请日：2010-08-30

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/39 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An example method for manufacturing a magneto-resistance effect element includes forming a free magnetization layer and forming a spacer layer. The spacer layer is formed, for example, by forming a non-magnetic first metallic layer and forming a second metallic layer on a surface of the non-magnetic first metallic layer. A first irradiating process includes irradiating, onto the second metallic layer, first ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr, so as to convert the second metallic layer into an insulating layer and to form a non-magnetic metallic path penetrating through the insulating layer and containing elements of the non-magnetic first metallic layer. A second irradiating process includes irradiating second ions or plasma onto the insulating layer. A non-magnetic third metallic layer is formed on the non-magnetic metallic path.

摘要翻译： 用于制造磁阻效应元件的示例性方法包括形成自由磁化层并形成间隔层。 间隔层例如通过形成非磁性第一金属层而在非磁性第一金属层的表面上形成第二金属层而形成。 第一照射方法包括向第二金属层照射包含氧和氮中的至少一种的第一离子或等离子体以及选自Ar，Xe，He，Ne，Kr中的至少一种，以便将 第二金属层形成绝缘层，并且形成穿过绝缘层并且包含非磁性第一金属层的元件的非磁性金属路径。 第二照射工艺包括将第二离子或等离子体照射到绝缘层上。 非磁性金属层形成在非磁性金属路径上。

公开(公告)号：US08208229B2

公开(公告)日：2012-06-26

申请号：US13243553

申请日：2011-09-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.

摘要翻译： 一种磁电阻效应元件，包括第一磁性层，第一金属层，其形成在所述第一磁性层上，主要包含选自由Cu，Au，Ag组成的组的元素，包含绝缘体的电流限制层 层和电流路径，其通过对形成在所述第一金属层上的主要包含Al的第二金属层进行氧化，氮化或氧氮化而形成，功能层，其形成在所述电流限制层上，主要含有选自 由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组，形成在所述功能层上的第三金属层，主要含有选自Cu，Au，Ag ; 以及形成在所述第三金属层上的第二磁性层。

公开(公告)号：US07948717B2

公开(公告)日：2011-05-24

申请号：US11898079

申请日：2007-09-07

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/0002 ,  G11C11/16 ,  H01L43/08 ,  Y10T428/1107

摘要： A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of the first magnetic layer, the second magnetic layer and the intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.

摘要翻译： 磁阻效应元件包括其磁化方向固定的第一磁性层; 磁化方向固定的第二磁性层; 中间层，设置在第一磁性层和第二磁性层之间; 以及一对电极，用于垂直于由第一磁性层，第二磁性层和中间层构成的所得叠层体的膜表面流动电流。 中间层包括绝缘部分和含有选自Fe，Co，Ni，Cr中的至少一种的金属部分，金属部分与第一磁性层和第二磁性层接触。

公开(公告)号：US07821748B2

公开(公告)日：2010-10-26

申请号：US11525076

申请日：2006-09-22

申请人： Hideaki Fukuzawa ,  Masahiro Takashita ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Masahiro Takashita ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1121

摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.

摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

公开(公告)号：US07808747B2

公开(公告)日：2010-10-05

申请号：US11702582

申请日：2007-02-06

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3281 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent.

摘要翻译： 磁阻效应元件包括固定磁化层; 自由磁化层; 在固定磁化层和自由磁化层之间的非磁性间隔层; 以及插入层，其设置在所述自由磁化层与所述非磁性间隔层的相对侧上，其中，所述第一绝缘层具有氧化物，氮化物或氮氧化物，所述氧化物，氮化物或氮氧化物包含选自由Al组成的组中的至少一种元素 铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）作为主要成分，并且所述插入层具有氧化物，氮化物或氧氮化物，其包含至少一种选自 以Al（铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）为主要成分的基团。

公开(公告)号：US07785662B2

公开(公告)日：2010-08-31

申请号：US11583968

申请日：2006-10-20

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： H05H1/00 ,  H01F41/00 ,  H01F41/22

CPC分类号： C23C8/02 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C8/34 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  C23C28/42 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/305

摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.

摘要翻译： 提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。 该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化 将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。