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    Semiconductor substrate cutting method
    53.
    发明授权
    Semiconductor substrate cutting method 有权
    半导体衬底切割方法

    公开(公告)号：US08551817B2

    公开(公告)日：2013-10-08

    申请号：US13269274

    申请日：2011-10-07

    申请人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama ,  Ryuji Sugiura ,  Kazuhiro Atsumi

    发明人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama ,  Ryuji Sugiura ,  Kazuhiro Atsumi

    IPC分类号： H01L21/00

    CPC分类号： B23K26/0884 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

    摘要： A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.

    摘要翻译： 用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位晶片内的聚光点，从而产生多光子吸收，从而形成 一个起始点区域，用于沿着一条线在晶片内熔融的处理区域进行切割。 因此，可以从用于自然切割的起点区域或以相对小的力产生断裂，从而到达前表面和后表面。 因此，在形成切割起点区域之后，通过芯片接合树脂层将膨胀膜附着到晶片的背面，然后扩大时，可以沿着线切割晶片和芯片接合树脂层。

    Semiconductor substrate cutting method
    58.
    发明授权
    Semiconductor substrate cutting method 有权
    半导体衬底切割方法

    公开(公告)号：US08058103B2

    公开(公告)日：2011-11-15

    申请号：US12603145

    申请日：2009-10-21

    申请人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama ,  Ryuji Sugiura ,  Kazuhiro Atsumi

    发明人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama ,  Ryuji Sugiura ,  Kazuhiro Atsumi

    IPC分类号： H01L21/00

    CPC分类号： B23K26/0884 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

    摘要： A method for cutting a semiconductor substrate having a front face formed with functional devices together with a die bonding resin layer. A wafer having a front face formed with functional devices is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to form a starting point region for cutting due to a modified region within the wafer along a cutting line. When an expansion film is attached to the rear face by way of a die bonding resin layer after forming the starting point region and then expanded, a fracture can be generated from the starting point region which reaches the front face and rear face, consequently, the wafer and die bonding resin layer can be cut along the cutting line.

    摘要翻译： 一种用于切割具有由功能元件形成的正面与半导体接合树脂层的半导体基板的方法。 用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位在晶片内的聚光点，从而形成切割起点区域 由于沿着切割线的晶片内的改质区域。 当在形成起点区域之后通过芯片接合树脂层将膨胀膜附着到后表面，然后膨胀时，可以从到达正面和背面的起点区域产生断裂，因此， 晶片和芯片接合树脂层可以沿切割线切割。