Magnetic recording head with nano scale pole tip bulge
    51.
    发明授权
    Magnetic recording head with nano scale pole tip bulge 有权
    磁记录头带有纳米级极尖凸起

    公开(公告)号:US08520336B1

    公开(公告)日:2013-08-27

    申请号:US13315098

    申请日:2011-12-08

    IPC分类号: G11B5/127

    CPC分类号: G11B5/1278 G11B5/3116

    摘要: A perpendicular magnetic recording head for use in a hard disk drive has a main pole that has a main pole tip in proximity to an air bearing surface. The main pole tip has a first width at the ABS, extending distally at a first angle measured from the plane of the ABS to a second width measured at a first distance from the ABS. The main pole tip extends distally at a second angle measured from the plane of the ABS from the second width to a third width, wherein the second angle is less than the first angle. The main pole tip extends distally at a third angle measured from the plane of the ABS from the third width to a fourth width, wherein the third angle is greater than the second angle. The first distance is between 25 and 100 nanometers.

    摘要翻译: 用于硬盘驱动器的垂直磁记录头具有主极,该主极具有靠近空气轴承表面的主极尖。 主极端部在ABS处具有第一宽度,以从ABS的平面测量的第一角度向距离ABS的第一距离测量的第二宽度向远侧延伸。 主极尖以从ABS的平面从第二宽度测量到第二宽度的第二角度向远侧延伸,其中第二角度小于第一角度。 主极尖以从ABS的平面测量的第三角度从第三宽度向第四宽度向远侧延伸,其中第三角度大于第二角度。 第一个距离在25到100纳米之间。

    Magnetoresistive sensors having an improved free layer
    52.
    发明授权
    Magnetoresistive sensors having an improved free layer 有权
    具有改进自由层的磁阻传感器

    公开(公告)号:US08498084B1

    公开(公告)日:2013-07-30

    申请号:US12506978

    申请日:2009-07-21

    IPC分类号: G11B5/127

    摘要: A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).

    摘要翻译: 公开了一种具有新型自由层的磁阻传感器及其制造方法。 磁阻传感器包括被钉扎层,设置在钉扎层上的阻挡层和设置在阻挡层上的自由层。 自由层包括设置在阻挡层上的第一磁性层。 第一磁性层具有正自旋极化,正磁致伸缩和多晶结构。 自由层还包括设置在第一磁性层上的第二磁性层。 第二磁性层具有负的磁致伸缩,并且至少包括钴(Co)和硼(B)。

    Magnetic storage element responsive to spin polarized current
    53.
    发明授权
    Magnetic storage element responsive to spin polarized current 有权
    响应于自旋极化电流的磁存储元件

    公开(公告)号:US08243503B2

    公开(公告)日:2012-08-14

    申请号:US12958106

    申请日:2010-12-01

    IPC分类号: G11C11/00

    摘要: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

    摘要翻译: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间,并且当存储单元处于第一数据状态时,具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层, 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

    Magnetic Storage Element Responsive to Spin Polarized Current
    55.
    发明申请
    Magnetic Storage Element Responsive to Spin Polarized Current 有权
    响应于旋转极化电流的磁存储元件

    公开(公告)号:US20110069537A1

    公开(公告)日:2011-03-24

    申请号:US12958106

    申请日:2010-12-01

    IPC分类号: G11C11/16 G11C11/15

    摘要: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

    摘要翻译: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间,并且当存储单元处于第一数据状态时,具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层, 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

    Magnetic storage element with storage layer magnetization directed for increased responsiveness to spin polarized current
    56.
    发明授权
    Magnetic storage element with storage layer magnetization directed for increased responsiveness to spin polarized current 有权
    具有存储层磁化的磁存储元件,用于增加对自旋极化电流的响应

    公开(公告)号:US07859069B2

    公开(公告)日:2010-12-28

    申请号:US11724740

    申请日:2007-03-16

    IPC分类号: G11C11/15

    摘要: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

    摘要翻译: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间,并且当存储单元处于第一数据状态时,具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层, 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

    Method and system for providing a magnetic recording media
    57.
    发明授权
    Method and system for providing a magnetic recording media 失效
    用于提供磁记录介质的方法和系统

    公开(公告)号:US07755861B1

    公开(公告)日:2010-07-13

    申请号:US11951670

    申请日:2007-12-06

    IPC分类号: G11B5/02

    摘要: A method and system for providing a magnetic recording medium is disclosed. The magnetic recording medium includes a plurality of regions. Each region corresponds to a bit and includes at least one grain. The grain(s) include a plurality of magnetic layers and at least one interlayer between the magnetic layers. The grain(s) have a thickness less than an exchange length of each of the magnetic layers. In addition, at least one of the magnetic layers has a coercivity different from another of the magnetic layers.

    摘要翻译: 公开了一种用于提供磁记录介质的方法和系统。 磁记录介质包括多个区域。 每个区域对应一位,并且包括至少一个颗粒。 颗粒包括多个磁性层和磁性层之间的至少一个中间层。 颗粒的厚度小于每个磁性层的交换长度。 此外,至少一个磁性层具有与另一个磁性层不同的矫顽力。

    DISCRETE TRACK MEDIA
    58.
    发明申请
    DISCRETE TRACK MEDIA 有权
    分离轨道介质

    公开(公告)号:US20100021767A1

    公开(公告)日:2010-01-28

    申请号:US12178443

    申请日:2008-07-23

    申请人: Nurul Amin Sining Mao

    发明人: Nurul Amin Sining Mao

    IPC分类号: G11B5/66 B05D5/12 B26D3/00

    摘要: A method of fabricating a discrete track magnetic recording media. A base layer is provided onto which repeating and alternating magnetic layer and non-magnetic layers are deposited. The thickness of the magnetic layer corresponds to the width of the track of the recording media. A cylindrical rod can be used as the base layer, such that the alternating magnetic and non-magnetic layers spiraling or concentric layers around the rod. The resulting media layer can be cut or sliced into individual magnetic media or used to imprint other media discs with the discrete pattern of the media layer.

    摘要翻译: 一种制造离散轨道磁记录介质的方法。 提供基层,沉积重复和交替的磁性层和非磁性层。 磁性层的厚度对应于记录介质的轨道的宽度。 可以使用圆柱形棒作为基层,使得交替的磁性和非磁性层围绕杆螺旋或同心层。 所得到的介质层可以被切割或切成单独的磁性介质,或用于用介质层的离散图案印刷其它介质盘。

    Differential CPP reader for perpendicular magnetic recording
    59.
    发明授权
    Differential CPP reader for perpendicular magnetic recording 有权
    用于垂直磁记录的差分CPP读码器

    公开(公告)号:US07016160B2

    公开(公告)日:2006-03-21

    申请号:US10715695

    申请日:2003-11-18

    IPC分类号: G11B5/127

    摘要: A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first free layer, a second free layer, and a nonmagnetic layer positioned therebetween. A nonmagnetic spacer is positioned between the plurality of tri-layer readers for electrically connecting the plurality of tri-layer readers in series such that a single CPP sense current representing a differential signal flows serially through the read head. With a single tri-layer reader, the free layers are spaced by a width substantially similar to the transition width of the magnetic medium.

    摘要翻译: 差分读取头包括在垂直于平面(CPP)模式的电流中操作的一个三层读取器或多个三层读取器。 三层读取器各自包括位于其间的第一自由层,第二自由层和非磁性层。 非磁性间隔件位于多个三层读取器之间,用于串联电连接多个三层读取器,使得表示差分信号的单个CPP感测电流串行地流过读取头。 使用单个三层读取器,自由层间隔开与磁介质的过渡宽度基本相似的宽度。

    Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
    60.
    发明授权
    Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments 失效
    结构实现热稳定的高灵敏度和线性范围的桥梁GMR传感器使用SAF磁性对准

    公开(公告)号:US06771472B1

    公开(公告)日:2004-08-03

    申请号:US10314458

    申请日:2002-12-06

    IPC分类号: G11B539

    摘要: The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.

    摘要翻译: 本发明提供一种磁传感器,其具有配置在惠斯通电桥中的第一相对对和第二相对对的电阻元件,其中电阻元件是具有参考层和不同厚度的钉扎层的合成反铁磁巨磁阻传感器,其中, 第一相对对具有与第二相对对相反的净磁矩,并且其中第一相对对具有比被钉扎层更厚的参考层,并且第二相对对具有比参考层更厚的钉扎层。 本发明的其它实施例具有相反的双层和三层合成反铁磁巨磁阻传感器或相反的合成和标准反铁磁巨磁阻传感器的电阻元件。