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    Wrap-around fin for contacting a capacitor strap of a DRAM
    51.
    发明授权
    Wrap-around fin for contacting a capacitor strap of a DRAM 有权
    用于接触DRAM电容带的绕包片

    公开(公告)号：US09385131B2

    公开(公告)日：2016-07-05

    申请号：US13484739

    申请日：2012-05-31

    申请人： Felix Beaudoin ,  Stephen M. Lucarini ,  Xinhui Wang ,  Xinlin Wang

    发明人： Felix Beaudoin ,  Stephen M. Lucarini ,  Xinhui Wang ,  Xinlin Wang

    IPC分类号： H01L27/108 ,  H01L27/12 ,  H01L21/8242

    CPC分类号： H01L27/10867 ,  H01L27/10826 ,  H01L27/10829 ,  H01L27/10879 ,  H01L27/1207 ,  H01L27/1211

    摘要： A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

    摘要翻译： 在深沟槽电容器的内部电极上形成与顶部半导体层横向接触的导电带结构。 覆盖导电带结构的空腔填充介电材料以形成具有顶表面的介电电容器盖，该顶表面与上焊盘层的最上表面共面。 形成与介质电容器盖侧向接触的半导体芯棒。 使用介质电容器盖和半导体芯棒的组合作为突出结构，在其周围形成有翅片限定的间隔物。 去除半导体芯棒，并且在蚀刻蚀刻下部焊盘层和顶部半导体层以形成横向缠绕导电带结构的半导体鳍片的蚀刻工艺中，将鳍状限定衬垫用作蚀刻掩模。 使用半导体鳍片的两个平行部分形成访问finFET。

    METHODS FOR TREATING A TUMOR USING AN ANTIBODY THAT SPECIFICALLY BINDS GRP94
    52.
    发明申请
    METHODS FOR TREATING A TUMOR USING AN ANTIBODY THAT SPECIFICALLY BINDS GRP94 审中-公开
    使用特异性GRP94抗体治疗肿瘤的方法

    公开(公告)号：US20140234324A1

    公开(公告)日：2014-08-21

    申请号：US14268925

    申请日：2014-05-02

    申请人： Soldano Ferrone ,  Xinhui Wang ,  Elvira Favoino ,  Ling Yu ,  Yangyang Wang

    发明人： Soldano Ferrone ,  Xinhui Wang ,  Elvira Favoino ,  Ling Yu ,  Yangyang Wang

    IPC分类号： C07K16/18 ,  A61K45/06 ,  A61K39/395 ,  A61K31/437

    CPC分类号： C07K16/18 ,  A61K31/437 ,  A61K39/3955 ,  A61K39/39558 ,  A61K45/06 ,  A61K2039/505 ,  C07K16/3053 ,  C07K2317/21 ,  C07K2317/622 ,  C07K2317/73 ,  A61K2300/00

    摘要： Combinations of agents that have a synergistic effect for the treatment of a tumor are disclosed herein. These combinations of agents can be used to treat tumors, wherein the cells of the cancer express a mutated BRAF. Methods are disclosed for treating a subject diagnosed with a tumor that expresses a mutated BRAF. The methods include administering to the subject (1) a therapeutically effective amount of an antibody or antigen binding fragment thereof that specifically binds glucose regulated protein (GRP) 94; and (2) a therapeutically effective amount of a BRAF inhibitor. In some embodiments, the tumor is melanoma. In some embodiments the method includes selecting a subject with primary or secondary resistance to a BRAF inhibitor. In further embodiments, treating the tumor comprises decreasing the metastasis of the tumor. In additional embodiments, the BRAF inhibitor comprises PLX4032 or PLX4720.

    摘要翻译： 本文公开了对治疗肿瘤具有协同作用的药剂的组合。 这些药剂组合可用于治疗肿瘤，其中癌细胞表达突变的BRAF。 公开了用于治疗诊断患有表达突变型BRAF的肿瘤的受试者的方法。 所述方法包括向受试者（1）施用治疗有效量的特异性结合葡萄糖调节蛋白（GRP）94的抗体或其抗原结合片段; 和（2）治疗有效量的BRAF抑制剂。 在一些实施方案中，肿瘤是黑素瘤。 在一些实施方案中，该方法包括选择具有对BRAF抑制剂的一级或二级抗性的受试者。 在另外的实施方案中，治疗肿瘤包括减少肿瘤的转移。 在另外的实施方案中，BRAF抑制剂包括PLX4032或PLX4720。

    MONOCLONAL ANTIBODIES FOR CSPG4 FOR THE DIAGNOSIS AND TREATMENT OF BASAL BREAST CARCINOMA
    53.
    发明申请
    MONOCLONAL ANTIBODIES FOR CSPG4 FOR THE DIAGNOSIS AND TREATMENT OF BASAL BREAST CARCINOMA 有权
    CSPG4用于诊断和治疗基础乳腺癌的单克隆抗体

    公开(公告)号：US20140004124A1

    公开(公告)日：2014-01-02

    申请号：US13921133

    申请日：2013-06-18

    申请人： Soldano Ferrone ,  Xinhui Wang

    发明人： Soldano Ferrone ,  Xinhui Wang

    IPC分类号： C07K16/18 ,  A61K39/00 ,  A61K45/06 ,  G01N33/68

    CPC分类号： A61K39/0011 ,  A61K45/06 ,  A61K2039/505 ,  A61K2039/57 ,  C07K16/18 ,  C07K16/3015 ,  C07K16/3053 ,  C07K2317/73 ,  C07K2317/76 ,  G01N33/57415 ,  G01N33/6854 ,  G01N2333/4722

    摘要： It is disclosed herein that condroitin sulfate proteoglycan 4 (CSPG4), also known as high molecular weight melanoma associated antigen, is overexpressed on basal breast carcinoma cells (BBC), specifically triple negative basal breast carcinoma cells (TNBC). Methods for detecting basal breast cancer in a subject are disclosed. Methods are also disclosed for inhibiting the growth of a basal breast cancer cell. These methods include contacting the basal breast cancer cell with an effective amount of an antibody that specifically binds CSPG4. Additional treatment methods, and the use of antibody panels, are also described herein.

    摘要翻译： 本文公开了硫酸蛋白多糖蛋白聚糖4（CSPG4）（也称为高分子量黑素瘤相关抗原）在基础乳腺癌细胞（BBC），特别是三阴性基底乳腺癌细胞（TNBC）上过表达。 公开了用于检测受试者中基底乳腺癌的方法。 还公开了抑制基底乳腺癌细胞生长的方法。 这些方法包括使基底乳腺癌细胞与有效量的特异性结合CSPG4的抗体接触。 本文还描述了另外的治疗方法和抗体面板的使用。

    Stressed source/drain CMOS and method for forming same
    54.
    发明授权
    Stressed source/drain CMOS and method for forming same 有权
    源极/漏极CMOS及其形成方法

    公开(公告)号：US08603894B2

    公开(公告)日：2013-12-10

    申请号：US13423716

    申请日：2012-03-19

    申请人： Amlan Majumdar ,  Xinhui Wang

    发明人： Amlan Majumdar ,  Xinhui Wang

    IPC分类号： H01L21/76

    CPC分类号： H01L21/84 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/1203 ,  H01L29/7848

    摘要： A complementary metal-oxide semiconductor (CMOS) structure includes a substrate and a P-type field effect transistor (FET) and an N-type FET disposed adjacent to one another on the substrate. Each FET includes a silicon-on-insulator (SOI) region, a gate electrode disposed on the SOI region, a source stressor, and a drain stressor disposed across from the source stressor relative to the gate electrode, wherein proximities of the source stressor and the drain stressor to a channel of a respective FET are substantially equal.

    摘要翻译： 互补金属氧化物半导体（CMOS）结构包括在衬底上彼此相邻布置的衬底和P型场效应晶体管（FET）和N型FET。 每个FET包括绝缘体上硅（SOI）区域，设置在SOI区域上的栅极电极，源极应力源和从源极应力源相对于栅电极相对设置的漏极应力源，其中源极应力源和 相应FET的通道的漏极应力基本相等。

    SYSTEM, METHOD AND BASE STATION SUBSYSTEM FOR REALIZING HANDOVER IN LOCAL SWITCH
    55.
    发明申请
    SYSTEM, METHOD AND BASE STATION SUBSYSTEM FOR REALIZING HANDOVER IN LOCAL SWITCH 有权
    用于在本地开关中实现切换的系统，方法和基站系统

    公开(公告)号：US20130040646A1

    公开(公告)日：2013-02-14

    申请号：US13581639

    申请日：2011-04-15

    申请人： Jing Li ,  Xinhui Wang

    发明人： Jing Li ,  Xinhui Wang

    IPC分类号： H04W36/00

    CPC分类号： H04W36/0016 ,  H04W36/08

    摘要： The present invention discloses a method for implementing a handover in a local switch, and the method includes: a core network transmitting indication information to a source base station subsystem during any terminal of communication parties which carries out a local switch is performing a base station subsystem handover, and the source base station subsystem determining whether to transmit user-plane speech data received from a media gateway to the terminal which has not performed the base station subsystem handover, or to transmit the user-plane speech data received from an internal link to the terminal which has not performed the base station subsystem handover, according to the indication information. The present invention also discloses a system for implementing a handover in a local switch as well as a base station subsystem.

    摘要翻译： 本发明公开了一种在本地交换机中实现切换的方法，所述方法包括：在执行本地交换机的通信方的任何终端期间向源基站子系统发送指示信息的核心网络正在执行基站子系统 切换，并且源基站子系统确定是否将从媒体网关接收的用户平面语音数据传送到尚未执行基站子系统切换的终端，或者将从内部链路接收到的用户平面语音数据发送到 根据指示信息，未执行基站子系统切换的终端。 本发明还公开了一种在本地交换机以及基站子系统中实现切换的系统。

    Self-aligned contacts for field effect transistor devices
    56.
    发明授权
    Self-aligned contacts for field effect transistor devices 有权
    场效应晶体管器件的自对准触点

    公开(公告)号：US08367508B2

    公开(公告)日：2013-02-05

    申请号：US12757201

    申请日：2010-04-09

    申请人： Dechao Guo ,  Wilfried E. Haensch ,  Xinhui Wang ,  Keith Kwong Hon Wong

    发明人： Dechao Guo ,  Wilfried E. Haensch ,  Xinhui Wang ,  Keith Kwong Hon Wong

    IPC分类号： H01L21/336

    CPC分类号： H01L29/665 ,  H01L21/28088 ,  H01L21/28114 ,  H01L21/28525 ,  H01L21/76897 ,  H01L21/78 ,  H01L29/66545

    摘要： A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region.

    摘要翻译： 一种用于形成场效应晶体管的方法，包括：形成栅极叠层，与栅叠层的相对侧相邻的间隔物，在间隔物的相对侧上的硅化物源区和硅化物漏极区，在源区上外延生长硅， 漏区; 在栅极堆叠和间隔物上形成衬垫层，去除衬里层的一部分以露出硬掩模层的一部分，去除硬掩模层的暴露部分以暴露栅堆叠的硅层，将暴露的硅去除 暴露栅叠层，源极区和漏区的金属层的一部分; 以及在栅叠层，硅化物源区和硅化物漏极区的金属层上沉积导电材料。

    GD3 peptide mimics
    59.
    发明授权
    GD3 peptide mimics 失效
    GD3肽模拟物

    公开(公告)号：US06998237B1

    公开(公告)日：2006-02-14

    申请号：US10618336

    申请日：2003-07-11

    申请人： Soldano Ferrone ,  Xinhui Wang ,  Jeff Chi-Feng Hsu ,  Chun-Yen Tsao ,  Wei Luo

    发明人： Soldano Ferrone ,  Xinhui Wang ,  Jeff Chi-Feng Hsu ,  Chun-Yen Tsao ,  Wei Luo

    IPC分类号： C12Q1/68 ,  A61K38/04 ,  C07K16/00

    CPC分类号： C07K16/3084 ,  A61K38/00

    摘要： The present invention provides peptide mimics for GD3 ganglioside. The peptide mimics were identified by panning phage display peptide libraries with an anti-GD3 monoclonal antibody. The peptide mimics inhibit the binding of an anti-GD3 antibody to GD3 positive cells and also elicit antibodies which can bind to GD3 positive cells. The identified peptide mimics can be used as immunogens for cancer therapy.

    摘要翻译： 本发明提供GD3神经节苷脂的肽模拟物。 通过用抗GD3单克隆抗体淘选噬菌体展示肽文库来鉴定肽模拟物。 肽模拟物抑制抗GD3抗体与GD3阳性细胞的结合，并引发可结合GD3阳性细胞的抗体。 鉴定的肽模拟物可用作癌症治疗的免疫原。

    Endpoint detection in chemical-mechanical polishing of patterned wafers having a low pattern density
    60.
    发明授权
    Endpoint detection in chemical-mechanical polishing of patterned wafers having a low pattern density 失效
    具有低图案密度的图案化晶片的化学机械抛光中的端点检测

    公开(公告)号：US06835117B1

    公开(公告)日：2004-12-28

    申请号：US10707120

    申请日：2003-11-21

    申请人： Xinhui Wang ,  Leping Li ,  Yingru Gu ,  Hung-Chin Guthrie

    发明人： Xinhui Wang ,  Leping Li ,  Yingru Gu ,  Hung-Chin Guthrie

    IPC分类号： B24B4900

    CPC分类号： B24B37/013 ,  B24B49/00 ,  B24B57/02

    摘要： A chemical-mechanical polishing (CMP) system and method includes pumping polishing slurry from a CMP apparatus through a sampling tube to an endpoint detection apparatus during a polishing operation, and flushing the sampling tube while a polishing operation is not in progress. The flushing of the sampling tube is commenced in accordance with a control signal from the endpoint detection apparatus terminating the polishing operation; the flushing is terminated in accordance with a starting signal to the CMP apparatus. The pump, which pumps a sample of slurry into the endpoint detection apparatus, continuously pumps slurry and/or water. Clogging of the slurry sampling tube is thus eliminated, thereby ensuring robust operation of the CMP apparatus. Contamination of the sampling tube is also avoided, so that the system may reliably provide sensitive endpoint detection and process control, even when a film of low pattern density is polished.

    摘要翻译： 化学机械抛光（CMP）系统和方法包括在抛光操作期间将抛光浆料从CMP装置通过采样管泵送到端点检测装置，并且在抛光操作未进行时冲洗采样管。 取样管的冲洗是根据来自终点检测装置的终止抛光操作的控制信号开始的; 根据到CMP设备的启动信号来终止冲洗。 将浆料样品泵入端点检测装置的泵连续地泵送浆液和/或水。 因此消除了浆料采样管的堵塞，从而确保CMP设备的稳定操作。 也避免了采样管的污染，使得系统可以可靠地提供敏感的端点检测和过程控制，即使当低图案密度的膜被抛光时。