Abstract:
According to an embodiment of a method for manufacturing a MISFET device, in a semiconductor wafer, a semiconductor layer is formed, having a first type of conductivity and a first level of doping. A first body region and a second body region, having a second type of conductivity, opposite to the first type of conductivity, and an enriched region, extending between the first and second body regions are formed in the semiconductor layer. The enriched region has the first type of conductivity and a second level of doping, higher than the first level of doping. Moreover, a gate electrode is formed over the enriched region and over part of the first and second body regions, and a dielectric gate structure is formed between the gate electrode and the semiconductor layer, the dielectric gate structure having a larger thickness on the enriched region and a smaller thickness on the first and second body regions. To form the enriched region, a first conductive layer is made on the semiconductor layer, an enrichment opening is formed in the first conductive layer, and a dopant species is introduced into the semiconductor layer through the enrichment opening. Furthermore, the formation of the dielectric gate structure envisages filling the enrichment opening with dielectric material, prior to forming the first body region and the second body region.
Abstract:
An integrated circuit includes an array of memory cells arranged in a plurality of sectors. Each sector includes a plurality of distinct random access memory resources able to be accessed differently in different modes. Peripheral circuitry is commonly shared by at least some of the sectors for addressing and reading/writing data. A respective dedicated controllable power supply line is coupled to each sector.
Abstract:
A method and system for making error corrections on digital information coded as symbol sequences, for example digital information stored in electronic memory systems or transmitted from and to these systems is described, provides the transmission of sequences incorporating a portion of error corrector code allowing the sequence which is more probably the original transmitted through the calculation of an error syndrome using a parity matrix to be restored when received. Advantageously according to embodiments of the invention, the error code incorporated in the original sequence belongs to a non Boolean group.
Abstract:
A voltage booster for generating a boosted voltage, including a charge pump adapted to generate the boosted voltage starting from a supply voltage by a transfer of electric charge controlled by at least one oscillating signal having an oscillation frequency; an oscillator for providing the oscillating signal; and a regulation circuit arranged to receive and perform a comparison of a voltage related to the boosted voltage and a reference voltage, and adapted to provide at least one regulation signal indicative of a result of said comparison, wherein said regulation signal is fed to the oscillator to control said oscillation frequency. The regulation circuit is adapted to cause the at least one regulation signal take one among a plurality of discrete values, depending on the result of the comparison, so that the oscillation frequency of the at least one periodical signal accordingly can take one among a plurality of discrete oscillation frequency values.
Abstract:
A power converter having a noise component and a modulator configured to vary a frequency of the noise component of the power converter on the basis of a digital signal to be transmitted.
Abstract:
A sensing circuit for a semiconductor memory, comprising at least one detecting amplifier, said detecting amplifier comprising: a first circuital branch adapted to be electrically run through by a first current corresponding to the sum of a second current as a function of a comparison current and a cell current, said cell current being a function of a state of a memory cell to be read in a predetermined biasing condition; a second circuital branch coupled as a current mirror configuration with the first circuital branch, said second circuital branch being adapted in the operation to be run through by a third current proportional to the first current; a third circuital branch coupled to said second branch, said third circuital branch being adapted in the operation to sink a fourth current as a function of said comparison current; a fourth circuital branch coupled to said second and third circuital branches, said fourth circuital branch being adapted in the operation to be run through by a residual current equal to the difference between the third and the fourth current, said residual current assuming different values depending on the fact that the cell current is lower, equal or higher than the comparison current; residual current sensitive means adapted to generate an indication of the state of the memory cell as a function of a value of the residual current.
Abstract:
A level shifter is proposed. The level shifter includes a stage having a first branch and a second branch, each branch including: a selection terminal for receiving a selection signal, the selection signal received by the first branch and the second branch being alternatively at a first voltage and at a second voltage higher than the first voltage in absolute value, a service terminal for receiving a third voltage higher than the second voltage in absolute value, an input circuit for coupling an intermediate node to the selection terminal when at the second voltage or for insulating the intermediate node from the selection terminal otherwise, an interface circuit for coupling an output terminal to the intermediate node when coupled or for insulating the output terminal from the intermediate node otherwise, and an output circuit for insulating the service terminal from the output terminal when coupled or for coupling the service terminal to the output terminal otherwise, the output terminals of the first branch and the second branch providing an output signal being alternatively at the second voltage or at the third voltage according to the selection signal.
Abstract:
A non-volatile memory device integrated on semiconductor substrate and having a matrix of non-volatile memory cells organized in rows, called word lines, and columns, called bit lines, the device including a plurality of active areas formed on the semiconductor substrate equidistant from each other, and having at least a first and a second group of active areas; the non-volatile memory cells integrated in the first group of active areas, each non-volatile memory cell having a source region, a drain region, and a floating gate electrode coupled to a control gate electrode, at least one group of the memory cells sharing a common source region integrated on the semiconductor substrate; and a contact region integrated in the second group of active areas and provided with at least one common source contact of the common source region.
Abstract:
A detection circuit is provided with a differential capacitive sensor and with an interface circuit having a first sense input and a second sense input, electrically connected to the differential capacitive sensor. Provided in the interface circuit are: a sense amplifier connected at input to the first sense input and to the second sense input and supplying an output signal related to a capacitive unbalancing of the differential capacitive sensor; and a common-mode control circuit, connected to the first sense input and to the second sense input and configured to control a common-mode electrical quantity present on the first sense input and on the second sense input. The common-mode control circuit is of a totally passive type and is provided with a capacitive circuit, which is substantially identical to an equivalent electrical circuit of the differential capacitive sensor and is driven with a driving signal in phase opposition with respect to a read signal supplied to the differential capacitive sensor.
Abstract:
A method performs iterative decoding of information coded by an error correction code. The method includes: defining a transcendent first function representing a quantity to be evaluated for the decoding method; defining a quantized second function approximating the first function; computing first values of the second function obtained based on first arguments; the first values being not null and the first arguments being variable in a limited range having a maximum limit; computing second values of the second function obtained on the basis of second arguments, the second values being null; and generating a look-up table representing the first function and containing the first and second values associated to indexes correlated to said first arguments and to an expected maximum limit.