摘要:
COMPOSITIONS, WHICH YIELD ELECTRICAL ELEMENTS SUCH AS RESISTORS HAVING A WIDE RANGE OF RESISTANCES, LOW TCR''S AND GOOD STABILITY PROPERTIES, COMPRISING (1) AND OXIDE OF THE FORMULA
(MXBI2-X)M''YM"2-Y)O7-Z
WHEREIN M IS AT LEAST ONE METAL SELECTED FROM THE GROUP CONSISTING OF YTTRIUM, THALLIUM, INDIUM, CADMIUM, LEAD AND THE RARE EARTH METALS OF ATOMIC NUMBER 57-71, INCLUSIVE, M'' IS AT LEAST ONE METAL SELECTED FROM THE GROUP CONSISTING OF PLATINUM, TITANIUM, TIN, CHROMIUM, RHODIUM, RHENIUM, ZIRCONIUM, ANTIMONY AND GERMANIUM, M" IS AT LEAST ONE OF RUTHENIUM AND IRIDIUM, AND (2) DIELECTRIC MATERIAL.
摘要:
An electrically nonconductive crystal growth controlling agent comprising submicron inert particles is mixed with a crystalline conductive phase comprising an oxide of Ruthenium or Iridium, a vehicle, and a moisture impervious binder with which the inert particles will not react and in which the inert particles will not dissolve to any appreciable extent at elevated temperatures. After being applied to a high temperature-resistant, electrically nonconductive substrate, the composition is fired at elevated temperatures for a sufficient period of time to permit the crystals of the conductive phase to grow until an equilibrium condition is reached. This condition is determined in part by the crystal growth controlling agent. Upon cooling, the binder bonds together a composite mass comprising an inert intersticed matrix made up of the crystal growth controlling agent and the crystalline conductive phase which forms an interstitial mass within the interstices of the matrix. The method comprises the steps of thoroughly mixing the above-identified materials, applying a layer of the mixture to the substrate, and firing the substrate and layer of material for 45 to 60 minutes to a preferred peak temperature in the range of 975*-1025* C. During the firing cycle the crystals of the conductive phase increase in size until further growth is limited by the crystal growth controlling agent.
摘要:
CERTAIN NOVEL ELECTRICALLY CONDUCTIVE BISMUTH RUTHENIUM AND BISMUTH IRIDIUM OXIDES, BI2(RU,IR)2O7, E.G., BI2RU2O7 AND BI2IR2O7, ARE PREPARED BY FIRING TOGETHER THE APPROPRIATE PRECURSORS, E.G., THE RESPECTIVE OXIDES. THE COMPOUNDS ARE USEFUL IN ELECTRICAL RESISTORS.
摘要:
A thick film resistor composition with a low length effect of TCR is provided. The thick film resistor composition containing at least one of an oxide of ruthenium and a ruthenium pyrochlore oxide as a conducting component, characterized in that the composition having 0.02-5.0 wt. % of silver incorporated therein.
摘要:
A thick film low-end resistor composition comprising an admixture of finely divided particles of (a) silver, palladium, an alloy of palladium and silver, or mixtures thereof; (b) an admixture of (1) glass having a softening point of 350.degree. to 500.degree. C., which when molten is wetting with respect to the other solids in the composition, and (2) glass having a softening point of 550.degree. to 650.degree. C.; and (c) 5-20% by volume, basis total solids, of sub-micron particles of RuO.sub.2, all of (a) through (c) being dispersed in (d) an organic medium.
摘要:
Disclosed herein is resistive paste containing conductive powder, which is composed of iron oxide, ruthenium oxide, lead oxide and zinc oxide, glass frit, and organic varnish. The conductive powder contains 10 to 25 atomic percent of iron oxide in terms of Fe atoms, 25 to 34 atomic percent of ruthenium oxide in terms of Ru atoms, 25 to 34 atomic percent of lead oxide in terms of Pb atoms, and 10 to 25 atomic percent of zinc oxide in terms of Zn atoms. According to this resistive paste, it is possible to obtain a resistor with small sliding noise at a low cost.
摘要:
The invention relates to a method of manufacturing a device in which a homogeneous electrical resistance layer of a resistive material having 10 ohm.cm is formed on an insulating substrate. According to the invention a stable binder-free suspension containing ruthenium hydroxide and glass particles is provided on the insulating substrate from which a ruthenium oxide-containing electrical resistance layer is formed by heating. The method according to the invention may be used successfully, for example, in the manufacture of cathode ray tubes.
摘要:
This invention is concerned with the fabrication of thick film, RuO.sub.2 -based resistors. More specifically, this invention is directed to the formulation of glass frits for use in such resistors exhibiting temperature coefficient of resistance values of less than 100 ppm. Such glass frits consist essentially, expressed in terms of mole percent on the oxide basis, of about 32-39% PbO, 44-47% B.sub.2 O.sub.3, 14-17% SiO.sub.2, and an effective amount up to 5% of WO.sub.3 or MoO.sub.3.
摘要翻译:本发明涉及厚膜RuO2基电阻器的制造。 更具体地,本发明涉及用于这种电阻器的玻璃料的配方,其显示电阻值小于100ppm的温度系数。 这种玻璃料基本上由氧化物的摩尔百分数表示,约32-39%的PbO,44-47%的B 2 O 3,14-17%的SiO 2和有效量的至多5%的WO 3或MoO 3。