公开(公告)号：US20030107311A1

公开(公告)日：2003-06-12

申请号：US10017656

申请日：2001-12-12

申请人： Candescent Technologies Corporation

发明人： Steven J. Radigan ,  Matthew A. Bonn ,  Hidenori Kemmotsu ,  Theodore S. Fahlen

IPC分类号： H01L027/15 ,  H01J001/62

CPC分类号： H01J3/022

摘要： An electron-emitting device (20, 70, 80, or 90) contains an electrode, either a control electrode (38) or an emitter electrode (32), having a specified portion situated off to the side of the bulk of the electrode. For a control electrode, the specified portion is an exposure portion (38EA or 38EB) having openings that expose electron-emissive elements (50A or 50B) situated over an emitter electrode. For an emitter electrode, the specified portion is an emitter-coupling portion situated below at least one electron-emissive element exposed through at least one opening in a control electrode. Configuring the device in this way enables the control-electrode-to-emitter-electrode capacitance to be quite small, thereby enhancing the device's switching speed. If the specified portion of the electrode becomes short circuited to the other electrode, the short-circuit defect can be removed by severing the specified portion from the remainder of its electrode.

摘要翻译： 电子发射器件（20,70,80或90）包含电极，控制电极（38）或发射极（32），其具有位于电极本体侧面的特定部分。 对于控制电极，指定部分是具有露出位于发射极上方的电子发射元件（50A或50B）的开口的曝光部分（38EA或38EB）。 对于发射电极，指定的部分是位于通过控制电极中的至少一个开口暴露的至少一个电子发射元件下方的发射极耦合部分。 以这种方式配置器件使控制电极对发射极之间的电容非常小，从而提高器件的开关速度。 如果电极的指定部分与另一个电极短路，则可以通过从电极的其余部分切断指定部分来消除短路缺陷。

公开(公告)号：US06552477B2

公开(公告)日：2003-04-22

申请号：US09244558

申请日：1999-02-03

申请人： Ji Ung Lee

发明人： Ji Ung Lee

IPC分类号： H01J1304

CPC分类号： H01J9/025 ,  H01J3/022 ,  H01J2201/30407

摘要： A field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.

摘要翻译： 一种场发射显示背板，包括具有表面的基板; 从衬底的表面延伸的发射体; 以及具有上表面，下表面和限定与发射器对准的开口的开口表面的阳极，所述开口表面包括相对于阳极向外弯曲的第一部分和相对于阳极向内弯曲的第二部分 。

公开(公告)号：US06537427B1

公开(公告)日：2003-03-25

申请号：US09243942

申请日：1999-02-04

申请人： Kanwal K. Raina

发明人： Kanwal K. Raina

IPC分类号： C23C1500

CPC分类号： H01J3/022

摘要： This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 &mgr;&OHgr;-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

公开(公告)号：US20030054723A1

公开(公告)日：2003-03-20

申请号：US10263580

申请日：2002-10-02

发明人： Sung-Yool Choi ,  Mun-Cheol Paek ,  Kyoung-Ik Cho ,  Jeen Hur ,  Gi-Pyung Han

IPC分类号： H01J009/04

CPC分类号： H01J3/022 ,  H01J31/127

摘要： A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.

公开(公告)号：US06518699B2

公开(公告)日：2003-02-11

申请号：US09907845

申请日：2001-07-17

申请人： John K. Lee ,  Behnam Moradi

发明人： John K. Lee ,  Behnam Moradi

IPC分类号： H01J162

CPC分类号： H01J3/022

摘要： An emitter substructure and methods for manufacturing the substructure are described. A substrate has a p-region formed at a surface of the substrate. A n-tank is formed such that the p-region surrounds a periphery of the n-tank. An emitter is formed on and electrically coupled to the n-tank. A dielectric layer is formed on the substrate that includes an opening surrounding the emitter. An extraction grid is formed on the dielectric layer. The extraction grid includes an opening surrounding and in close proximity to a tip of the emitter. An insulating region is formed at a lower boundary of the n-tank. The insulating region electrically isolates the emitter and the n-tank along at least a portion of the lower boundary beneath the opening. The insulating region thus functions to displace a depletion region associated with a boundary between the p-region and the n-tank from an area that can be illuminated by photons traveling through the extraction grid or openings in the extraction grid. This reduces distortion in field emission displays.

公开(公告)号：US20030025441A1

公开(公告)日：2003-02-06

申请号：US10191677

申请日：2002-07-08

发明人： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC分类号： H01J001/02

CPC分类号： H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

摘要： An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

摘要翻译： 用于稳定有源矩阵场发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

公开(公告)号：US20020193036A1

公开(公告)日：2002-12-19

申请号：US09882933

申请日：2001-06-14

发明人： Paul J. Benning ,  William R. Knight ,  Michael J. Regan

IPC分类号： H01J009/24

CPC分类号： B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/1418 ,  G11C11/23 ,  H01J3/022

摘要： An electron lens is used for focusing electrons from a cathode to an anode. The lens includes a first conductive layer with a first opening at a first distance from the cathode. The first conductive layer is held at a first voltage. The lens also includes a second conductive layer with a second opening at a second distance from the first conductive layer and a third distance from the anode. The second conductive layer is held at a second voltage substantially equal to the voltage of the anode. The first and second openings are chosen based on the first voltage, the second voltage, the first distance, the second distance and the third distance. The opening focuses the electrons emitted from the cathode onto the anode to a spot size preferably less than 40 nanometers. The force created between the cathode and anode is minimized by the structure of the lens.

摘要翻译： 电子透镜用于将电子从阴极聚焦到阳极。 透镜包括第一导电层，其具有距离阴极第一距离的第一开口。 第一导电层保持在第一电压。 透镜还包括第二导电层，其具有距离第一导电层第二距离的第二开口和离阳极的第三距离。 第二导电层被保持在基本上等于阳极电压的第二电压上。 基于第一电压，第二电压，第一距离，第二距离和第三距离来选择第一和第二开口。 开口将从阴极发射的电子聚焦到阳极上至优选小于40纳米的光斑尺寸。 通过透镜的结构，在阴极和阳极之间产生的力最小化。

公开(公告)号：US06448100B1

公开(公告)日：2002-09-10

申请号：US09880159

申请日：2001-06-12

申请人： Donald W. Schulte ,  Terry E. McMahon

发明人： Donald W. Schulte ,  Terry E. McMahon

IPC分类号： H01L2100

CPC分类号： H01J3/022 ,  H01J9/025

摘要： An efficient and economical method for fabricating field emitter tips within a layered substrate. The layered substrate is patterned using standard photolithographic techniques and etched to form a rectangular or cylindrical column on top of the substrate composed of conductive and non-conductive layers. The layered substrate is then exposed to an anisotropic etching medium which removes the column to produce a well through the conductive and non-conductive layers and which produces a conical or pyramid-shaped field emitter tip within the silicon substrate directly below the well. Finally, a pull-back etch is used to remove dielectric material from the walls of the well. In an optional step, a thin metal coating may be sputtered onto the surface of the silicon-based field emitter tip.

摘要翻译： 一种用于在层状衬底内制造场发射器尖端的有效且经济的方法。 使用标准光刻技术对层状衬底进行构图，并在由导电层和非导电层构成的衬底顶部上蚀刻以形成矩形或圆柱形柱。 然后将分层衬底暴露于各向异性蚀刻介质，其移除柱以通过导电和非导电层产生阱，并且在正好在阱下方的硅衬底内产生锥形或棱锥形的场致发射极尖端。 最后，使用拉回蚀刻来从阱的壁去除电介质材料。 在可选步骤中，可以将薄金属涂层溅射到硅基场发射器尖端的表面上。

公开(公告)号：US06445124B1

公开(公告)日：2002-09-03

申请号：US09654708

申请日：2000-09-01

申请人： Hironori Asai ,  Masahiko Yamamoto ,  Koji Suzuki

发明人： Hironori Asai ,  Masahiko Yamamoto ,  Koji Suzuki

IPC分类号： H01J162

CPC分类号： H01J3/022 ,  H01J31/127

摘要： A field emission device essentially consists of three electrodes, and comprises a cathode on the surface of which an emissive material is formed, a gate electrode formed on an insulation layer formed to upwardly surround the cathode, and having an opening for passing electrons emitted from the emissive material, and an anode for accelerating the electrons passing through the opening, wherein L/S is one or above, where S represents an aperture diameter of the opening, and L represents a typical shortest distance that the electrons emitted from the emissive material take to pass through the insulation layer surrounding the cathode. Based on this structure, it is possible to provide a field emission device that can control the orbit of emitted electrons while employing a simple three-electrode structure.

摘要翻译： 场致发射器件基本上由三个电极组成，并且包括在其表面上形成发光材料的阴极，形成在向上包围阴极的绝缘层上的栅电极，并且具有用于使从 发射材料和用于加速穿过开口的电子的阳极，其中L / S是一个或更多个，其中S表示开口的孔径，L表示从发射材料发射的电子的典型最短距离 穿过阴极周围的绝缘层。 基于该结构，可以提供一种可以在采用简单的三电极结构的同时控制发射的电子的轨道的场发射装置。

公开(公告)号：US06441543B1

公开(公告)日：2002-08-27

申请号：US09016222

申请日：1998-01-30

申请人： Zvi Yaniv ,  Ronald Charles Robinder

发明人： Zvi Yaniv ,  Ronald Charles Robinder

IPC分类号： H01J102

CPC分类号： H01J29/467 ,  H01J3/021 ,  H01J3/022 ,  H01J29/04 ,  H01J2329/00

摘要： A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.

摘要翻译： 多个场发射器件阴极各自产生电子的发射，然后使用各种电极来控制和聚焦电子以产生电子束。 水平和垂直偏转技术类似于在阴极射线管内使用的技术，其操作是将各个电子束扫描到荧光屏的部分上以产生图像。 使用多个场致发射阴极提供比通常的阴极射线管更可能的屏幕深度。