公开(公告)号：US5680008A

公开(公告)日：1997-10-21

申请号：US417010

申请日：1995-04-05

Applicant: George R. Brandes ,  John B. Miller

Inventor： George R. Brandes ,  John B. Miller

IPC: H01J1/32 ,  H01J43/10 ,  H01J43/18

CPC classification number: H01J43/10 ,  H01J1/32

Abstract: This invention relates to electron emitting semiconductor materials for use in dynodes, dynode devices incorporating such materials, and methods of making the dynode devices. In particular, the invention relates to emissive materials having an electron affinity that is negative and which have low resistivity. The invention also relates to electronic devices such as electron multipliers, ion detectors, and photomultiplier tubes incorporating the dynodes comprising the materials, and to methods for fabricating the electronic devices. The secondary electron emitters of the present invention comprise wide bandgap semiconductor films selected from diamond, AlN, BN, Ga.sub.1-y Al.sub.y N where 0.ltoreq.y.ltoreq.1 and (AlN).sub.x (SiC).sub.1-x where 0.2.ltoreq.x.ltoreq.1. The films are preferably single crystal or polycrystalline. The films may be continuous or patterned.

Abstract translation: 本发明涉及用于倍增极的电子发射半导体材料，结合这种材料的倍增极装置以及制造倍增极装置的方法。 特别地，本发明涉及电子亲和力为负的且具有低电阻率的发射材料。 本发明还涉及电子装置，例如电子倍增器，离子检测器和结合包含材料的倍增电极的光电倍增管，以及用于制造电子装置的方法。 本发明的二次电子发射体包括选自金刚石，AlN，BN，Ga1-yAlyN，其中0≤y≤1和（AlN）x（SiC）1-x的宽带隙半导体膜，其中0.2 < x

公开(公告)号：US5510674A

公开(公告)日：1996-04-23

申请号：US234157

申请日：1994-04-28

Applicant: Hiroyuki Kyushima ,  Koji Nagura ,  Yutaka Hasegawa ,  Eiichiro Kawano ,  Tomihiko Kuroyanagi ,  Akira Atsumi ,  Masuya Mizuide

Inventor： Hiroyuki Kyushima ,  Koji Nagura ,  Yutaka Hasegawa ,  Eiichiro Kawano ,  Tomihiko Kuroyanagi ,  Akira Atsumi ,  Masuya Mizuide

IPC: H01J9/12 ,  H01J9/18 ,  H01J43/04 ,  H01J43/10 ,  H01J43/12 ,  H01J43/22 ,  H01J43/18

CPC classification number: H01J9/12 ,  H01J43/04 ,  H01J43/10 ,  H01J43/12 ,  H01J43/22 ,  H01J9/18 ,  H01J2201/32 ,  H01J2201/3426

Abstract: A photomultiplier comprising an electron multiplier for minimizing a variation in multiplication factor and noise is characterized in that insulating members are aligned on the same line to insulate a plurality of dynode plates for constituting a dynode unit from each other, thereby preventing a damage to each dynode plate. At the same time, a through hole is formed to fix the insulating member provided to each dynode plate such that a gap is provided between the major surface of the dynode plate and the surface of the insulating member, thereby preventing discharge between dynode plates, which is caused due to dust or the like deposited on the surface of the insulating member.

Abstract translation: 包括用于使乘法因子和噪声的变化最小化的电子倍增器的光电倍增管的特征在于，绝缘构件在同一条线上对准以将多个倍增极板彼此绝缘以构成倍增电极单元，从而防止对每个倍增电极的损坏 盘子。 同时，形成通孔以固定设置在每个倍增极板上的绝缘构件，使得在倍增极板的主表面和绝缘构件的表面之间设置间隙，从而防止倍增极板之间的放电， 是由于沉积在绝缘构件的表面上的灰尘等引起的。

公开(公告)号：US4639638A

公开(公告)日：1987-01-27

申请号：US695155

申请日：1985-01-28

Applicant: John A. Purcell ,  John T. Puglis ,  Steven W. Duckett

Inventor： John A. Purcell ,  John T. Puglis ,  Steven W. Duckett

IPC: H01J1/32 ,  H01J9/12 ,  H01J43/10 ,  H01J43/22

CPC classification number: H01J9/12 ,  H01J1/32 ,  H01J43/10 ,  H01J2201/32 ,  H01J2201/3423 ,  H01J2201/3425

Abstract: The photosensitivity of a photomultiplier dynode to white light or infrared radiation is greatly reduced by coating the dynode with a layer of an alkali halide material having good secondary electron emission characteristics. A method of applying the coating to the dynode is also described.

Abstract translation: 通过用具有良好的二次电子发射特性的碱金属卤化物材料层涂覆倍增极来大大降低光电倍增管对白光或红外辐射的光敏性。 还描述了将涂层施加到倍增极的方法。

公开(公告)号：US3910803A

公开(公告)日：1975-10-07

申请号：US43178774

申请日：1974-01-08

Applicant: ENGLISH ELECTRIC VALVE CO LTD

Inventor： HOWORTH JONATHAN ROSS ,  TRAWNY ERIK WERNER LUDWIG

IPC: H01J9/12 ,  H01J43/10 ,  H01L7/44 ,  C23F1/00 ,  H01L21/00

CPC classification number: H01J43/10 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/34 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/12 ,  Y10S148/135 ,  Y10S438/977

Abstract: A dynode structure which emits electrons in response to incident electrons or incident light consists of a thin layer of galliumarsenide which is formed integrally with a surrounding frame of gallium-arsenide. The structure is robust and straight forward to produce.

Abstract translation: 响应于入射电子或入射光发射电子的倍增器结构由与砷化镓的周围框架一体形成的砷化镓薄层组成。 结构坚固耐用，直接生产。

公开(公告)号：US3253182A

公开(公告)日：1966-05-24

申请号：US23472762

申请日：1962-11-01

Applicant: PHILIPS CORP

Inventor： JACQUES MARCHET

IPC: H01J43/10

CPC classification number: H01J43/10

公开(公告)号：US3159442A

公开(公告)日：1964-12-01

申请号：US9518961

申请日：1961-03-13

Applicant: NAT RES DEV

Inventor： LESLIE WILCOCK WILLIAM

IPC: H01J9/12 ,  H01J29/02 ,  H01J29/41 ,  H01J31/50 ,  H01J43/10

CPC classification number: H01J29/41 ,  H01J9/125 ,  H01J29/023 ,  H01J31/506 ,  H01J43/10 ,  H01J2201/32

Abstract: An electrode includes an electron or irradiation transmissive conducting layer and an electron-emissive layer of insulating material in spongy form. This layer may be of BaF2, LiF2, MgF2, MgO, Al2O2, CsI, KCl or NaCl and preferably has a density of only about 1% of the same material in bulk form, e.g. 0.01 to 0.1 gms. per cc. with a thickness of 10 to 100 m . The layer may be formed by deposition in a gaseous atmosphere, e.g. argon at 1 to 2 mm. of Hg pressure, with a spacing of about 3 inches between the evaporator and the receiver, which may be rotating. Alternatively magnesium may be burnt in air at atmospheric pressure about 14 inches from the receiver. The receiver may be an aluminium film supported by a metal ring and formed by vacuum deposition of aluminium on to a film of thermally removable cellulose nitrate to a thickness of 140 to 1000 . Specifications 792,507, 862,211 and 898,433 are referred to.

公开(公告)号：US2460381A

公开(公告)日：1949-02-01

申请号：US64607546

申请日：1946-02-07

Applicant: RCA CORP

Inventor： FORGUE STANLEY V

IPC: H01J43/10

CPC classification number: H01J43/10