公开(公告)号：US06273959B1

公开(公告)日：2001-08-14

申请号：US09011787

申请日：1998-02-24

申请人： Teruhito Oonishi ,  Ken Idota ,  Masaaki Niwa ,  Yoshinao Harada

发明人： Teruhito Oonishi ,  Ken Idota ,  Masaaki Niwa ,  Yoshinao Harada

IPC分类号： C23G102

CPC分类号： H01L21/02052 ,  C11D1/22 ,  C11D3/042 ,  C11D11/0047 ,  Y10S134/902

摘要： There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz processing vessel and heating to no more than 100° C. A silicon wafer is immersed into the cleaning solution for 10 minutes and then washed by demineralized water for about 7 minutes. The surfaces of foreign particles on the wafer are etched by hydrogen fluoride, and n-dodecylbenzenesulfonic acid combines with the etched surfaces by sulfate ester bonding. The apparent diameter of the foreign particles increases and the repulsive force caused by zeta potential etc. increases, so that the foreign particles are unlikely to adhere to the surface of the silicon wafer permitting the foreign particles to be easily washed away in a water cleaning step.

摘要翻译： 公开了一种半导体器件清洁方法，包括放置含有24重量％ ％硫酸，5重量％ ％过氧化氢，0.02重量％ ％氟化氢，0.075重量％ ％正十二烷基苯磺酸和水加入到石英处理容器中并加热至不超过100℃。将硅晶片浸入清洁溶液中10分钟，然后用软化水洗涤约7分钟。 晶片上的异物颗粒的表面被氟化氢蚀刻，正十二烷基苯磺酸通过硫酸酯键合与蚀刻表面结合。 外来颗粒的表观直径增加，并且由ζ电位等引起的排斥力增加，使得外来颗粒不可能粘附到硅晶片的表面，从而允许外来颗粒在水清洗步骤中容易地被冲走 。

公开(公告)号：US06248179B1

公开(公告)日：2001-06-19

申请号：US09209166

申请日：1998-12-10

申请人： Didier Severac ,  Michel Derie

发明人： Didier Severac ,  Michel Derie

IPC分类号： C23G102

CPC分类号： H01L21/02071 ,  B08B3/04 ,  B08B3/10 ,  H01L21/67028 ,  H01L21/6715 ,  Y10S134/902 ,  Y10S438/963

摘要： A method of removal of polymers of the type including bromine, chlorine, silicon, and carbon, present on a semiconductor wafer partly covered with resist, including of rotating the wafer in its plane around its axis, in an enclosure under a controlled atmosphere, at ambient temperature, including the steps of rotating the wafer at a speed included between 500 and 2000 CPM in an enclosure filled with nitrogen; sprinkling the wafer with water, substantially at the center of the wafer; introducing hydrofluoric acid during a determined cleaning time, while maintaining the sprinkling; and rinsing the wafer by continuing the sprinkling to remove any trace of hydrofluoric acid from the wafer, at the end of the cleaning time.

摘要翻译： 一种除去包含溴，氯，硅和碳的聚合物的方法，其存在于部分被抗蚀剂覆盖的半导体晶片上，该半导体晶片包括使晶片绕其轴线在其平面内旋转，在受控气氛下的外壳中 环境温度，包括以包含在500和2000 CPM之间的速度在填充有氮气的外壳中旋转晶片的步骤; 用水将晶片撒在晶片的中心; 在确定的清洁时间内引入氢氟酸，同时保持喷洒; 并且在清洁时间结束时，通过继续喷洒以从晶片中除去任何痕量的氢氟酸来冲洗晶片。

公开(公告)号：US06231677B1

公开(公告)日：2001-05-15

申请号：US09255537

申请日：1999-02-22

申请人： Norio Ishikawa ,  Masanori Suga ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Masanori Suga ,  Kiyoto Mori

IPC分类号： C23G102

CPC分类号： G03F7/42

摘要： A photoresist stripping liquid composition effective for removing resist residues after dry etching and resist ashing in the manufacturing processes of semiconductor devices, which does not corrode the different metallic materials, and wherein are comprised, as active component, one or more polycarboxylic acids and/or their salts selected from the group consisting of aliphatic polycarboxylic acids and their salts as well as aminopolycarboxylic acids and their salts.

摘要翻译： 一种光致抗蚀剂剥离液体组合物，其有效用于在不腐蚀不同金属材料的半导体器件的制造工艺中干蚀刻后除去抗蚀剂残留物并抵抗灰化，并且其中作为活性组分包含一种或多种多元羧酸和/或 它们的盐选自脂族多元羧酸及其盐以及氨基多羧酸及其盐。

公开(公告)号：US06217668B1

公开(公告)日：2001-04-17

申请号：US08190173

申请日：1994-01-31

申请人： Norbert Czech ,  Adrian Kempster

发明人： Norbert Czech ,  Adrian Kempster

IPC分类号： C23G102

CPC分类号： C23G5/00 ,  C23C10/60

摘要： A corroded superalloy or heat resistant steel part, in particular a gas turbine component like a gas turbine blade, having a surface with products or corrosion is refurbished. The invention the surface is cleaned, in particular mechanically or chemically, and an aluminide coating is applied to the cleaned surface. Subsequently, the aluminide coating is removed, whereby all products of corrosion which have still remained in the part to be refurbished are removed as well.

摘要翻译： 被腐蚀的超合金或耐热钢部件，特别是具有产品或腐蚀表面的燃气轮机部件，如燃气轮机叶片被翻新。 本发明特别是机械地或化学地清洁表面，并且将铝化物涂层施加到清洁表面上。 随后，去除铝化物涂层，从而除去仍然保留在待翻新部分中的所有腐蚀产物。

公开(公告)号：US06203624B1

公开(公告)日：2001-03-20

申请号：US09142165

申请日：1998-11-24

申请人： Stéphane Bargues ,  Frédéric Favier ,  Jean-Louis Pascal ,  Jean-Pierre Lecourt ,  Frédérique Damerval

发明人： Stéphane Bargues ,  Frédéric Favier ,  Jean-Louis Pascal ,  Jean-Pierre Lecourt ,  Frédérique Damerval

IPC分类号： C23G102

CPC分类号： G21F9/004 ,  Y10S516/903 ,  Y10S588/901

摘要： An organomineral decontamination gel that is used to decontaminate surfaces, in particular metal surfaces. The organomineral gel is made up of a colloid solution containing the combination of a mineral viscosing agent and an organic viscosing agent (coviscosant) chosen from among hydrosoluble organic polymers and surfactants. The presence of an organic viscosing agent improves the rheological properties of gels and substantially reduces their mineral content which generates smaller quantities of solid waste. A decontamination process for metal surface which entails applying the organomineral gel onto the surface to be decontaminated, maintaining this gel on the surface and removing the gel from the surface in particular by rinsing is also provided.

摘要翻译： 一种有机矿物去污凝胶，用于净化表面，特别是金属表面。 有机矿物凝胶由含有矿物粘合剂和选自水溶性有机聚合物和表面活性剂的有机粘合剂（coviscosant）的组合的胶体溶液组成。 有机粘性剂的存在改善了凝胶的流变性能，并显着降低了其产生较少量固体废物的矿物质含量。 金属表面的净化方法需要将有机矿物凝胶施加到待净化的表面上，将该凝胶保持在表面上并且特别是通过漂洗从表面除去凝胶。

公开(公告)号：US06702902B1

公开(公告)日：2004-03-09

申请号：US09959041

申请日：2001-10-16

申请人： Jean-Michel Fulconis ,  Jacques Delagrange ,  Francis Dalard

发明人： Jean-Michel Fulconis ,  Jacques Delagrange ,  Francis Dalard

IPC分类号： C23G102

CPC分类号： G21F9/004

摘要： Disclosed a method for radioactive decontamination of a steel surface, which is performed by bringing the surface to be decontaminated into contact with a pickling solution comprising a first iron oxidation agent, wherein bringing into contact being achieved by means of the direct continuous introduction into the pickling solution of a gas comprising a second oxidation agent, and a device for implementing the said method.

摘要翻译： 公开了一种钢表面的放射性净化方法，该方法通过将要去污的表面与包含第一铁氧化剂的酸洗溶液接触来进行，其中通过直接连续引入酸洗中获得接触 包含第二氧化剂的气体溶液和用于实施所述方法的装置。

公开(公告)号：US06503333B2

公开(公告)日：2003-01-07

申请号：US09726628

申请日：2000-11-30

申请人： Jih-Churng Twu ,  Rong-Hui Kao ,  Chia-Chun Cheng

发明人： Jih-Churng Twu ,  Rong-Hui Kao ,  Chia-Chun Cheng

IPC分类号： C23G102

CPC分类号： H01L21/67028 ,  B08B3/08 ,  B08B2203/005 ,  Y10S134/902

摘要： A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.

公开(公告)号：US06475290B2

公开(公告)日：2002-11-05

申请号：US09978978

申请日：2001-10-16

申请人： David H. Jones

发明人： David H. Jones

IPC分类号： C23G102

CPC分类号： C11D3/381 ,  C11D1/30 ,  C11D11/0041

摘要： A method for the cleaning of a substrate having an organic compound such as a hydrogenic compound thereon, the method comprising the step of applying to the substrate a composition comprising a lignosulfonate and a microbially effective amount of microorganisms in an aqueous solution. The method is ideally practiced to achieve the microbial degradation of hydrocarbons and can be used as a parts washing solution and for cleaning substrates such as floors, decks of vessels, etc.

摘要翻译： 一种清洗具有有机化合物如其上的氢化合物的基材的方法，所述方法包括在水溶液中向基材施加包含木质素磺酸盐和微生物有效量的微生物的组合物的步骤。 该方法理想地用于实现碳氢化合物的微生物降解，并且可以用作清洗溶液的部件和用于清洁基底如地板，容器甲板等。

公开(公告)号：US06468357B1

公开(公告)日：2002-10-22

申请号：US10123197

申请日：2002-04-17

申请人： Hidemitsu Aoki ,  Kaori Watanabe ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Hidemitsu Aoki ,  Kaori Watanabe ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23G102

CPC分类号： H01L21/32134 ,  C23F1/30 ,  Y10S134/902

摘要： A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

摘要翻译： 一种除去含钌金属的方法包括向半导体衬底施加去除剂的步骤。 去除剂包括硝酸铈（IV）盐和硝酸。

公开(公告)号：US06451124B1

公开(公告)日：2002-09-17

申请号：US09882207

申请日：2001-06-15

申请人： Roland Brunner

发明人： Roland Brunner

IPC分类号： C23G102

CPC分类号： H01L21/02049 ,  H01L21/02052 ,  Y10S134/902

摘要： A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.

摘要翻译： 在HF存在下，然后在臭氧存在下，特别是用于清洗硅半导体晶片的情况下化学处理半导体晶片的方法是这样的，用含有臭氧的介质处理的半导体晶片不含水 HF。