公开(公告)号：US06877518B2

公开(公告)日：2005-04-12

申请号：US10309132

申请日：2002-12-04

申请人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23F1/08 ,  C23F1/30 ,  H01L21/00 ,  H01L21/304 ,  B08B15/00

CPC分类号： H01L21/6708 ,  Y10S134/902

摘要： A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

摘要翻译： 一种用于通过化学溶液溶解和去除附着在基底上的钌基金属的化学溶液处理设备，包括：化学溶液处理单元; 水库单元; 和化学溶液循环系统。 处理单元中的化学溶液包括化学溶液供应喷嘴和回收机构。 储液器单元具有与化学溶液接触的清洁部分的结构，使得在所述化学溶液处理中溶解和除去的衍生自钌基金属的气体成分在化学溶液循环期间在化学溶液的外部挥发， 并且包括排气管。

公开(公告)号：US06468357B1

公开(公告)日：2002-10-22

申请号：US10123197

申请日：2002-04-17

申请人： Hidemitsu Aoki ,  Kaori Watanabe ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Hidemitsu Aoki ,  Kaori Watanabe ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23G102

CPC分类号： H01L21/32134 ,  C23F1/30 ,  Y10S134/902

摘要： A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

摘要翻译： 一种除去含钌金属的方法包括向半导体衬底施加去除剂的步骤。 去除剂包括硝酸铈（IV）盐和硝酸。

公开(公告)号：US6080709A

公开(公告)日：2000-06-27

申请号：US131976

申请日：1998-08-11

申请人： Norio Ishikawa ,  Kiyoto Mori ,  Hidemitsu Aoki

发明人： Norio Ishikawa ,  Kiyoto Mori ,  Hidemitsu Aoki

IPC分类号： C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H05K3/26 ,  C11D3/30 ,  C11D3/33 ,  C11D7/08

CPC分类号： H01L21/02074 ,  C11D11/0047 ,  C11D7/265 ,  C11D7/3245 ,  H05K3/26

摘要： The present invention relates to a cleaning solution for cleaning substrates, to which a metallic wiring has been applied, being capable of easily removing the metallic impurities of the substrate surface without corroding the metal, not putting a strain on the environment, and not causing a shelf life problem.The cleaning solution comprising at least one member selected from a group consisting of oxalic acid, ammonium oxalate and polyaminocarboxylic acids, but contains no hydrogen fluoride.

摘要翻译： 本发明涉及一种用于清洁基板的清洗液，金属布线已经涂布在该基板上，能够容易地除去基板表面的金属杂质而不会腐蚀金属，而不会对环境产生压力， 保质期问题。 该清洁溶液包含至少一种选自草酸，草酸铵和聚氨基羧酸，但不含氟化氢的成员。

公开(公告)号：US20050236362A1

公开(公告)日：2005-10-27

申请号：US11115275

申请日：2005-04-27

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  C09K13/00 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 通过灰化抵抗图案。 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗溶液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。

公开(公告)号：US07138362B2

公开(公告)日：2006-11-21

申请号：US10369877

申请日：2003-02-19

申请人： Yumiko Abe ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori ,  Yoshiko Kasama

发明人： Yumiko Abe ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori ,  Yoshiko Kasama

IPC分类号： C11D7/50

CPC分类号： C11D3/2082 ,  C11D1/004 ,  C11D1/22 ,  C11D1/24 ,  C11D1/345 ,  C11D1/72 ,  C11D3/2086 ,  C11D11/0047

摘要： There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

公开(公告)号：US07368064B2

公开(公告)日：2008-05-06

申请号：US11115275

申请日：2005-04-27

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： B44C1/22

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 灰化抗蚀图案 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。

公开(公告)号：US07087562B2

公开(公告)日：2006-08-08

申请号：US10435165

申请日：2003-05-09

申请人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

发明人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

IPC分类号： C11D3/22

CPC分类号： H01L21/02074 ,  C11D3/2075 ,  C11D7/26 ,  C11D11/0047

摘要： A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

公开(公告)号：US07943516B2

公开(公告)日：2011-05-17

申请号：US12076688

申请日：2008-03-21

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 灰化抗蚀图案 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。

公开(公告)号：US20080214002A1

公开(公告)日：2008-09-04

申请号：US12076688

申请日：2008-03-21

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

公开(公告)号：US06787293B2

公开(公告)日：2004-09-07

申请号：US10395649

申请日：2003-03-21

申请人： Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Yoshiko Kasama

发明人： Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Yoshiko Kasama

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/423

摘要： A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.