Abstract:
A multilayer semiconductor device includes at least one structure for transmitting electrical signals, and in particular, microwave signals. The device includes at least one electrically conductive enclosure that includes a bottom plate and a top plate in two different layers. Lateral walls connect the bottom and top plates. Electrically conductive connecting strips extend into the enclosure and are in an intermediate layer, and are electrically insulated from the enclosure. The enclosure has at least one passage through which extends electrical connections of the connecting strips, which are also electrically insulated from the enclosure.
Abstract:
A method for depositing a dielectric material on copper apparent on the surface of a structure, by placing the structure in a depositing chamber of CVD type (Chemical Vapor Deposition), adding to the chamber a first gas forming a precursor for the formation of the dielectric material and containing an element able to contaminate copper, adding to the chamber a second gas containing a chemical element intended, together with the element contained in the first gas and able to contaminate copper, to form said dielectric material, the second gas being able to react with the first gas to give the deposit of dielectric material, performing the deposit of dielectric material from the first gas and the second gas, characterized in that the method comprises a step for adding a third gas able to prevent the contamination of copper by said element contained in the first gas.
Abstract:
The present invention relates to a memory in integrated circuit comprising a central Flash-type memory comprising memory cells forming pages, a buffer memory capable of storing binary words, and a sequencer for executing an instruction for saving, in a target page of the Flash memory, a series of external words received at an input terminal of the memory. According to the present invention, the sequencer is arranged for, after saving the series of external words in the buffer memory, saving, in the buffer memory, internal words present in the target page and corresponding, due to their address in the page, to locations of words in the buffer memory that have not received any external words, then erasing the target page and saving in the erased page the words present in the buffer memory.
Abstract:
An integrated circuit is provided that includes at least one metallization level having a plurality of dummy conductors. At least one of the dummy conductors has an oriented shape made up of a plurality of non-parallel rectangles in mutual contact. In one embodiment, the at least one dummy conductor is in the form of an “L”. In another embodiment, the at least one dummy conductor is in the form of a Latin cross. In yet another embodiment, the at least one dummy conductor is in the form of a “T”.
Abstract:
An amplification circuit is provided for the signal output from a microphone in which the signal is amplified by a differential structure amplifier. The circuit includes the pull-up voltage, which initializes the operating state of the microphone, being coupled to a first input of the differential structure amplifier and to a second input of the differential structure amplifier through a pull-up resistor.
Abstract:
An electronic component (1) includes a substrate (2) and at least two piezoelectric resonators (3, 4) each having an active element (6, 9), a lower electrode (5, 8) and an upper electrode (7, 10). The lower electrode (5) of the first resonator (3) is made of a material that is different from that of the lower electrode (8) of the second resonator (4) such that the resonators exhibit different resonance frequencies.
Abstract:
A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5
Abstract:
An asynchronous data transmission device includes a data reception terminal receiving data clocked by a sampling signal in synchronization with a local clock signal. A register is connected to the data reception terminal for receiving the data. A clock deviation measuring circuit is connected to the register for determining a number M of periods of the sampling signal appearing during K periods of a synchronization signal received on the data reception terminal, and for comparing the number M to a tolerance margin defined by a lower threshold and an upper threshold.
Abstract:
A circuit is provided for clock recovery from a specified datastream. The circuit includes a reference extraction unit for extracting from the datastream time references defining a reference time base, and a digital Phase Locked Loop coupled to the reference extraction unit. The digital Phase Locked Loop includes a first programmable counter in the guise of a digitally controlled oscillator for overseeing an output time base, a second programmable counter in the guise of a loop divider for overseeing a loop time base, and a dedicated processor capable of executing a program. The program includes a first software module in the guise of a phase comparator for comparing values of the loop time base and the reference time base and generating a loop error; and a second software module in the guise of a loop filter for producing an adaptation value of an increment value of the first programmable counter from the loop error. Also provided are a user terminal for an interactive telebroadcasting system that includes at least one such circuit for clock recovery, and a method for clock recovery from a specified datastream.
Abstract:
A device for protecting a circuit against a polarity reversal of a connection to a D.C. power supply, comprising a controllable switch interposed on said connection between a first terminal of a first voltage of the D.C. power supply and a first terminal of the circuit, and first means for turning-off with a delay the switch in the presence of a reverse polarity.