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    Semiconductor device and method of fabricating the same
    673.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US12243815B2

    公开(公告)日：2025-03-04

    申请号：US17680507

    申请日：2022-02-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eui Bok Lee ,  Wandon Kim ,  Rakhwan Kim

    IPC: H01L23/522 ,  H01L21/768 ,  H10D64/23

    Abstract: A semiconductor device includes a front-end-of-line (FEOL) layer, which includes a plurality of individual devices, on a substrate, and first, second, and third metal layers sequentially stacked on the FEOL layer. The second metal layer includes an interlayer insulating layer and an interconnection line in the interlayer insulating layer. The interconnection line includes a lower via portion electrically connected to the first metal layer, an upper via portion electrically connected to the third metal layer, and a line portion between the lower via portion and the upper via portion. A line width of an upper portion of the interconnection line gradually decreases in a vertical direction away from the substrate, and a line width of a lower portion of the interconnection line gradually increases in a vertical direction away from the substrate.

    Semiconductor device having work-function metal and method of forming the same
    674.
    发明授权
    Semiconductor device having work-function metal and method of forming the same 有权

    公开(公告)号：US12243785B2

    公开(公告)日：2025-03-04

    申请号：US18425390

    申请日：2024-01-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Juyoun Kim

    IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/84 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

    Abstract: In a semiconductor device, a first active area, a second active area, and a third active area are formed on a substrate. A first gate electrode is formed on the first active area, a second gate electrode is formed on the second active area, and a third gate electrode is formed on the third active area. The first gate electrode has a first P-work-function metal layer, a first capping layer, a first N-work-function metal layer, a first barrier metal layer, and a first conductive layer. The second gate electrode has a second capping layer, a second N-work-function metal layer, a second barrier metal layer, and a second conductive layer. The third gate electrode has a second P-work-function metal layer, a third capping layer, a third N-work-function metal layer, and a third barrier metal layer. The third gate electrode does not have the first and second conductive layers.

    Display device and operating method thereof
    675.
    发明授权
    Display device and operating method thereof 有权

    公开(公告)号：US12243186B2

    公开(公告)日：2025-03-04

    申请号：US18457655

    申请日：2023-08-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jeongmoon Byun

    IPC: G06T3/40 ,  G06F3/01 ,  G06T5/50

    Abstract: According to at least one example embodiment, a display device includes at least one sensor, and processing circuitry, wherein the processing circuitry may be configured to generate a first image based on a gaze region of a user tracked using the at least one sensor, generate a second image based on a desired section of a background image, the desired section corresponding to the user's gaze region on the background image, obtain residual data from the first image and the second image, the obtaining the residual data including subtracting pixel values of the first image from pixel values of the second image, and generate a third image based on the residual data, the generating the third image including performing filtering of the residual data by applying at least one desired weight to the residual data.

    Systems and methods for managing memory utilization
    677.
    发明授权
    Systems and methods for managing memory utilization 有权

    公开(公告)号：US12242387B2

    公开(公告)日：2025-03-04

    申请号：US17726100

    申请日：2022-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yang Seok Ki

    IPC: G06F12/1045

    Abstract: Systems and methods for managing memory are disclosed. In one embodiment, a first data structure is generated, where the first data structure is associated with one or more virtual addresses mapped to one or more physical addresses of the memory. A size of the first data structure is based on a characteristic of the memory. Data to be stored in the memory is received, and a virtual address of the one or more virtual addresses is identified based on the first data structure. The virtual address is mapped to a physical address, and the data is stored in the physical address. The first data structure is updated based on the storing of the data.

    Washing machine
    679.
    发明授权
    Washing machine 有权

    公开(公告)号：US12241196B2

    公开(公告)日：2025-03-04

    申请号：US18508493

    申请日：2023-11-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyounyoung Lee ,  Younghyun Kim ,  Geun Kang

    IPC: D06F37/26 ,  D06F37/20 ,  D06F37/22

    Abstract: A washing machine including a bearing housing to rotatably support a shaft configured to drive the drum and insertable into the tub, the bearing housing including a stator coupling portion to which a stator of a drive motor configured to rotate the shaft is coupled, and a plurality of leg portions spaced apart along a circumferential direction of the stator coupling portion. The plurality of leg portions include a leg plate including a first end connected to the stator coupling portion and a second end formed to extend along a radial direction of the stator coupling portion from the first end, a connection portion provided to connect between adjacent first ends of the plurality of leg portions, a separation space formed between second ends of the plurality of leg portions, and an outer rib formed along an edge of the leg plate and the connection portion.

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