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公开(公告)号:US11954589B2
公开(公告)日:2024-04-09
申请号:US17572899
申请日:2022-01-11
Applicant: STMicroelectronics SA
Inventor: Philippe Galy , Thomas Bedecarrats
CPC classification number: G06N3/065 , G06N3/049 , G06N3/063 , G11C11/54 , H01L27/027 , H01L27/0285 , G06N3/04 , H01L29/42376 , H03K3/356
Abstract: An artificial-neuron device includes an integration-generation circuit coupled between an input at which an input signal is received and an output at which an output signal is delivered, and a refractory circuit inhibiting the integrator circuit after the delivery of the output signal. The refractory circuit is formed by a first MOS transistor having a first conduction-terminal coupled to a supply node, a second conduction-terminal coupled to a common node, and a control-terminal coupled to the output, and a second MOS transistor having a first conduction-terminal coupled to the input, a second conduction-terminal coupled to a reference node at which a reference voltage is received, and a control-terminal coupled to the common node. A resistive-capacitive circuit is coupled between the supply node and the reference node and having a tap coupled to the common node, with the inhibition duration being dependent upon a time constant of the resistive-capacitive circuit.
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公开(公告)号:US11920989B2
公开(公告)日:2024-03-05
申请号:US17192425
申请日:2021-03-04
Applicant: STMicroelectronics SA
Inventor: Philippe Galy , Renan Lethiecq
IPC: G01K7/01 , G01K7/22 , G01K7/25 , G05F3/24 , H01C7/00 , H01C7/04 , H01L27/12 , H01L29/10 , H01L29/78
CPC classification number: G01K7/01 , G01K7/015 , G01K7/22 , G01K7/226 , G01K7/25 , G05F3/245 , H01C7/008 , H01C7/04 , H01L27/1203 , H01L29/1095 , H01L29/7831
Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.
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公开(公告)号:US20240072036A1
公开(公告)日:2024-02-29
申请号:US18232032
申请日:2023-08-09
Applicant: STMicroelectronics SA
Inventor: Yohann SOLARO , Johan BOURGEAT
CPC classification number: H01L27/0248 , H01L29/7436
Abstract: An electronic device includes a doped semiconductor substrate of a first conductivity type. First and second doped wells are provided, separated from each other by trench isolation, within the doped semiconductor substrate. At least one first region and at least one second region are respectively located in the first and second doped wells, with each first and second region having a doping level higher than a doping level of the first and second doped wells. The trench isolation penetrates into the first and second doped wells and extends laterally between the first region and second region. A third region laterally extends between the first and second doped wells at a location under the insulating trench. The third region has a doping level lower than the doping level of the first and second doped wells.
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公开(公告)号:US11916061B2
公开(公告)日:2024-02-27
申请号:US18095728
申请日:2023-01-11
Applicant: STMicroelectronics SA
Inventor: Louise De Conti , Philippe Galy
CPC classification number: H01L27/0262 , H01L27/0277 , H01L27/1203 , H01L29/7436
Abstract: An electronic circuit includes a first electronic component formed above a buried insulating layer of a substrate and a second electronic component formed under the buried insulating layer. The insulating layer is thoroughly crossed by a semiconductor well. The semiconductor well electrically couples a terminal of the first electronic component to a terminal of the second electronic component.
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公开(公告)号:US20240023465A1
公开(公告)日:2024-01-18
申请号:US18186109
申请日:2023-03-17
Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS SA , STMicroelectronics (Crolles 2) SAS
Inventor: Bruno REIG , Vincent PUYAL , Stephane MONFRAY , Alain FLEURY , Philippe CATHELIN
CPC classification number: H10N70/823 , H10N70/231 , H10N70/8413 , H10N70/011
Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.
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公开(公告)号:US11862381B2
公开(公告)日:2024-01-02
申请号:US18146572
申请日:2022-12-27
Applicant: STMicroelectronics SA
Inventor: Vincent Knopik
IPC: H01Q1/36 , H01F27/28 , H01L23/522 , H03H7/42 , H01F27/29 , H01F38/14 , H01F41/04 , H01F41/10 , H01Q1/24 , H01Q1/48 , H01Q1/50 , H01Q7/00
CPC classification number: H01F27/2804 , H01F27/29 , H01F38/14 , H01F41/041 , H01F41/10 , H01L23/5227 , H01Q1/243 , H01Q1/36 , H01Q1/48 , H01Q1/50 , H01Q7/00 , H03H7/42 , H01F2027/2809 , H01F2027/2819
Abstract: A transformer of the symmetric-asymmetric type includes comprising a primary inductive circuit and a secondary inductive circuit formed in a same plane by respective interleaved and stacked metal tracks. A first crossing region includes a pair of connection plates facing one another, with each connection plate having a rectangular shape that is wider than the metal tracks, and diagonally connected to tracks of the secondary inductive circuit.
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687.
公开(公告)号:US11811120B2
公开(公告)日:2023-11-07
申请号:US17646964
申请日:2022-01-04
Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
Inventor: Victor Fiorese , Frederic Gianesello , Florian Voineau
CPC classification number: H01P1/161 , H01P1/2131 , H01P5/19 , H01Q25/001
Abstract: An orthomode junction for separating and/or combining orthogonally-polarized radiofrequency wave signals, comprises a body which has a main cavity forming a main waveguide, which has a blind end, and auxiliary cavities forming auxiliary waveguides, which communicate laterally with the main cavity in the vicinity of the blind end thereof, and a deflection insert situated at the blind end of the main cavity and facing the auxiliary cavities, the deflection insert having different shapes on the side of the auxiliary cavities respectively.
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公开(公告)号:US20230259463A1
公开(公告)日:2023-08-17
申请号:US18109675
申请日:2023-02-14
Applicant: STMicroelectronics S.r.l. , STMicroelectronics SA
Inventor: Roberta VITTIMANI , Federico GOLLER , Riccardo ANGRILLI , Charles AUBENAS
IPC: G06F12/14
CPC classification number: G06F12/1441 , G06F12/1458
Abstract: A processing system includes a communication system and a processing core configured to generate write requests. A circuit has associated a slave interface circuit configured to manage an address sub-range and selectively forward write requests addressed to a given address. Configuration data specifies whether the given address is protected/unprotected and locked/unlocked. In response to a received write request, address and data are extracted and a determination based on the configuration data is made as to whether the extracted address is protected/unprotected, and locked/unlocked. When the extracted address is unprotected or unlocked, the slave interface forwards the write request. When the extracted address is protected and locked, the slave interface generates an unlock signal in response to a comparison of the extracted address with the extracted data, with the unlock signal being asserted when the extracted data satisfy a predetermined rule with respect to the extracted address.
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公开(公告)号:US11716235B2
公开(公告)日:2023-08-01
申请号:US17722048
申请日:2022-04-15
Applicant: STMICROELECTRONICS SA
Inventor: Fatima Barrami
IPC: H04L27/26 , H04L27/20 , H04B10/548 , H04B10/69
CPC classification number: H04L27/2628 , H04B10/548 , H04B10/69 , H04L27/2096 , H04L27/2697
Abstract: An OFDM (orthogonal frequency division multiplexing) transmitter includes an inverse fast Fourier transform circuit, which, in operation, generates, based on digital input data, a complex time-varying digital signal having real and imaginary components; and a multiplexer adapted to generate a time-multiplexed digital signal by time-multiplexing one or more of the real components with one or more of the imaginary components.
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公开(公告)号:US11658479B2
公开(公告)日:2023-05-23
申请号:US17015695
申请日:2020-09-09
Inventor: Radhakrishnan Sithanandam , Divya Agarwal , Ghislain Troussier , Jean Jimenez , Malathi Kar
CPC classification number: H02H9/046 , H01L27/0255 , H01L27/0266 , H01L27/0288 , H01L27/0285
Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.
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