公开(公告)号：US07160804B2

公开(公告)日：2007-01-09

申请号：US11174750

申请日：2005-07-05

申请人： Shian-Jyh Lin ,  Sheng-Tsung Chen ,  Neng-Tai Shih ,  Chien-Chang Huang ,  Chien-Jung Yang ,  Yi-Jung Chen

发明人： Shian-Jyh Lin ,  Sheng-Tsung Chen ,  Neng-Tai Shih ,  Chien-Chang Huang ,  Chien-Jung Yang ,  Yi-Jung Chen

IPC分类号： H01L21/4763

CPC分类号： H01L29/6659 ,  H01L21/324 ,  H01L29/7833

摘要： A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.

摘要翻译： 一种通过毫秒退火制造MOS晶体管的方法。 提供了具有栅叠层的半导体衬底，其包括覆盖半导体衬底的顶表面上的栅介质层的栅电极。 执行至少一个注入工艺以在栅电极的相对侧上形成两个掺杂区域。 毫秒退火激活掺杂区中的掺杂剂。 毫秒退火包括快速加热和1至50毫秒内的快速冷却。

公开(公告)号：US07151561B2

公开(公告)日：2006-12-19

申请号：US10102175

申请日：2002-03-20

申请人： Chun-Huang Lin ,  Jeng-Feng Lan ,  Chien-Chang Huang

发明人： Chun-Huang Lin ,  Jeng-Feng Lan ,  Chien-Chang Huang

IPC分类号： H04N5/228 ,  G09G5/08 ,  G06K9/56 ,  G06K9/64

CPC分类号： H04N5/145

摘要： A method to detect the movement of an image sensor according to captured images. An image region is captured from a first image. Then, a first corresponding region matching the first region is captured from a second image. A second image region is captured from the second image. Then, a second corresponding region matching the second captured image region is captured from the first image. Finally, the movement of the image sensor is determined according to the first region and the first corresponding region when a first relative distance between the first region and the first corresponding region is the same as a second relative distance of the second captured image region and the second corresponding region, but in the opposite direction.

摘要翻译： 根据拍摄图像检测图像传感器的移动的方法。 从第一图像捕获图像区域。 然后，从第二图像捕获与第一区域匹配的第一对应区域。 从第二图像捕获第二图像区域。 然后，从第一图像捕获与第二拍摄图像区域匹配的第二对应区域。 最后，当第一区域和第一对应区域之间的第一相对距离与第二捕获图像区域的第二相对距离相同时，根据第一区域和第一对应区域确定图像传感器的运动， 第二个相应的区域，但在相反的方向。

公开(公告)号：US20060275940A1

公开(公告)日：2006-12-07

申请号：US11380660

申请日：2006-04-28

申请人： Ming-Chun Su ,  Chien-Chang Huang ,  Chih-Cheng Hsieh

发明人： Ming-Chun Su ,  Chien-Chang Huang ,  Chih-Cheng Hsieh

IPC分类号： H01L21/00

CPC分类号： H04N5/3591 ,  H01L27/14609 ,  H04N5/3597

摘要： A method for controlling well capacity of a photodiode includes providing a reference voltage, which is greater than a voltage of ground, to a gate of a transfer transistor while exposing the photodiode whose one end is connected to ground, so as to control the well capacity of the photodiode.

摘要翻译： 用于控制光电二极管的阱容量的方法包括在将一端连接到地的光电二极管暴露的同时，向转移晶体管的栅极提供大于接地电压的参考电压，以便控制阱容量 的光电二极管。

公开(公告)号：US20060249764A1

公开(公告)日：2006-11-09

申请号：US11381744

申请日：2006-05-04

申请人： Chien-Chang Huang ,  Chih-Cheng Hsieh ,  Ching-Wei Chen

发明人： Chien-Chang Huang ,  Chih-Cheng Hsieh ,  Ching-Wei Chen

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14689

摘要： A pinned photodiode sensor with gate-controlled SCR switch includes a pinned photodiode and a gate-controlled SCR switch. The SCR switch includes a P-type substrate, an N− doped region, and an N+ doped region formed on the substrate; a P+ doped region formed on the N− doped region; an oxide layer formed on the P substrate, the N− doped region, the N+ doped region, and the P+ doped region; and a gate formed above the P substrate and the N− doped region. The gate includes a P+ doped region and an N+ doped region. During an exposure procedure, a depletion region will not reach the interface between the oxide layer and the substrate, thereby preventing dark current leakage.

摘要翻译： 具有门控SCR开关的钉扎光电二极管传感器包括钉扎光电二极管和门控SCR开关。 SCR开关包括形成在衬底上的P型衬底，N掺杂区和N +掺杂区; 形成在所述N掺杂区上的P +掺杂区; 形成在P基板上的氧化物层，N掺杂区域，N +掺杂区域和P +掺杂区域; 以及形成在P衬底和N掺杂区域上方的栅极。 栅极包括P +掺杂区域和N +掺杂区域。 在曝光过程中，耗尽区域将不会到达氧化物层和衬底之间的界面，从而防止暗电流泄漏。

公开(公告)号：US20060108507A1

公开(公告)日：2006-05-25

申请号：US11073319

申请日：2005-03-04

申请人： Chien-Chang Huang

发明人： Chien-Chang Huang

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/035236

摘要： An active pixel sensor includes a photosensitive element, and first and second transistors. The photosensitive element generates an electrical signal in response to detected light, and updates the electrical signal in response to a reset signal. The first transistor is coupled electrically to the photosensitive element, and amplifies the electrical signal to result in an output signal. The second transistor is coupled electrically to the first transistor, and is responsive to a row select signal for controlling output of the output signal. An image sensing module built from active pixel sensors is also disclosed.

摘要翻译： 有源像素传感器包括光敏元件以及第一和第二晶体管。 感光元件响应于检测到的光产生电信号，并响应于复位信号更新电信号。 第一晶体管电耦合到光敏元件，并放大电信号以产生输出信号。 第二晶体管电耦合到第一晶体管，并响应于行选择信号来控制输出信号的输出。 还公开了由有源像素传感器构建的图像感测模块。

公开(公告)号：US07050043B2

公开(公告)日：2006-05-23

申请号：US10628438

申请日：2003-07-29

申请人： Chien-Chang Huang ,  Chun-Huang Lin ,  Jeng-Feng Lan

发明人： Chien-Chang Huang ,  Chun-Huang Lin ,  Jeng-Feng Lan

IPC分类号： G09G5/08

CPC分类号： G06F3/0317 ,  G06F3/03545

摘要： An optical apparatus. The optical apparatus is applied to an object surface, comprising a frame, a light emitting device and an optical sensor. The frame is disposed in the optical apparatus, having a first compartment and a second compartment, wherein the first compartment has a first opening and the second compartment has a second opening. The light emitting device is disposed in the first compartment, wherein light emitted from the light emitting device passes through the first opening and is reflected by the object surface outside the frame. The optical sensor is disposed in the second compartment to receive light reflected from the object surface passing through the second opening.

摘要翻译： 光学装置。 光学装置被应用于物体表面，包括框架，发光装置和光学传感器。 框架设置在具有第一隔间和第二隔间的光学设备中，其中第一隔室具有第一开口，第二隔室具有第二开口。 发光装置设置在第一隔室中，其中从发光装置发射的光穿过第一开口并被框架外部的物体表面反射。 光学传感器设置在第二隔室中以接收从通过第二开口的物体表面反射的光。

公开(公告)号：US06946678B2

公开(公告)日：2005-09-20

申请号：US10902450

申请日：2004-07-29

申请人： Tie Jiang Wu ,  Chien-Chang Huang ,  Yu-Wei Ting ,  Bo Ching Jiang

发明人： Tie Jiang Wu ,  Chien-Chang Huang ,  Yu-Wei Ting ,  Bo Ching Jiang

IPC分类号： G11C8/14 ,  H01L21/8242 ,  H01L23/544 ,  H01L27/02 ,  H01L23/58

CPC分类号： H01L27/10861 ,  G11C8/14 ,  H01L22/34 ,  H01L27/0207 ,  H01L27/1087 ,  H01L27/10891

摘要： A test key for validating the position of a word line structure overlaying a deep trench capacitor of a DRAM. The test key is deposited in the scribe line region of a wafer. The deep trench capacitor is deposited in the scribe line region and has a buried plate. A rectangular word line is deposited in the scribe line and covers a portion of the deep trench capacitor, and two passing word lines are deposited above the deep trench. A first doping region and a second doping region are deposited between the rectangular word line and the first passing word line and between the rectangular word line and the second passing word line respectively. A first plug, a second plug and a third plugs are coupled to the first doping region, the second doping region and the buried plate respectively.

摘要翻译： 用于验证覆盖DRAM的深沟槽电容器的字线结构的位置的测试键。 测试键被沉积在晶片的划线区域中。 深沟槽电容器沉积在划线区域并具有掩埋板。 在划线中沉积矩形字线并覆盖深沟槽电容器的一部分，并且在深沟槽上方沉积两条经过的字线。 第一掺杂区域和第二掺杂区域分别沉积在矩形字线和第一通过字线之间以及矩形字线和第二通过字线之间。 第一插头，第二插头和第三插头分别耦合到第一掺杂区域，第二掺杂区域和掩埋板。

公开(公告)号：US20050184289A1

公开(公告)日：2005-08-25

申请号：US11096836

申请日：2005-03-30

申请人： Tie Wu ,  Chien-Chang Huang ,  Bo Jiang ,  Yu-Wei Ting ,  Chin-Ling Huang

发明人： Tie Wu ,  Chien-Chang Huang ,  Bo Jiang ,  Yu-Wei Ting ,  Chin-Ling Huang

IPC分类号： G11C29/36 ,  H01L21/8242 ,  H01L23/544 ,  H01L27/108 ,  H01L21/66 ,  H01L23/58 ,  H01L29/10

CPC分类号： H01L27/10876 ,  G11C11/401 ,  G11C29/36 ,  G11C2029/5002 ,  H01L22/34 ,  H01L27/10841

摘要： A test device and method for detecting alignment of active areas and memory cell structures in DRAM devices with vertical transistors. In the test device, parallel first and second memory cell structures disposed in the scribe line region, each has a deep trench capacitor and a transistor structure. An active area is disposed between the first and second memory cell structures. The active area overlaps the first and second memory cell structures by a predetermined width. First and second conductive pads are disposed on both ends of the first memory cell structures respectively, and third and fourth conductive pads are disposed on both ends of the first memory cell structures respectively.

摘要翻译： 一种用于检测具有垂直晶体管的DRAM器件中的有源区和存储单元结构的对准的测试装置和方法。 在测试装置中，设置在划线区域中的并行第一和第二存储单元结构各自具有深沟槽电容器和晶体管结构。 有源区域设置在第一和第二存储单元结构之间。 活动区域与第一和第二存储单元结构重叠预定宽度。 第一和第二导电焊盘分别设置在第一存储单元结构的两端，第三和第四导电焊盘分别设置在第一存储单元结构的两端。

公开(公告)号：US20050139944A1

公开(公告)日：2005-06-30

申请号：US10858970

申请日：2004-06-02

申请人： Chun-Huang Lin ,  Jeng-Feng Lan ,  Chien-Chang Huang

发明人： Chun-Huang Lin ,  Jeng-Feng Lan ,  Chien-Chang Huang

IPC分类号： H01L31/0232

CPC分类号： G06F3/0317 ,  G06F3/03543

摘要： An optical navigation chip. The optical navigation chip is appropriate for an optical pointing device and used for calculating a displacement of the optical navigation chip relative to an operating surface. The optical navigation chip comprises a photo sensor array driven by a photo sensor control circuit for detecting an image of the operating surface, a signal readout circuit coupled with the photo sensor array for reading out the image in analog format, an analog-to-digital conversion (ADC) circuit coupled with the signal readout circuit for converting the image from analog format to digital format, an image qualification circuit coupled with the ADC circuit for determining quality of the image and outputting a quality index accordingly, and a motion detection circuit for outputting the displacement according to the quality index.

摘要翻译： 光导航芯片。 光学导航芯片适用于光学指向装置并用于计算光学导航芯片相对于操作表面的位移。 光学导航芯片包括由用于检测操作表面的图像的光传感器控制电路驱动的光传感器阵列，与用于以模拟格式读出图像的光传感器阵列耦合的信号读出电路，模数转换器 与用于将图像从模拟格式转换为数字格式的信号读出电路耦合的转换（ADC）电路，与ADC电路耦合的图像鉴定电路，用于确定图像的质量并相应地输出质量指标;以及运动检测电路， 根据质量指标输出位移。

公开(公告)号：US06838296B2

公开(公告)日：2005-01-04

申请号：US10448920

申请日：2003-05-29

申请人： Tie-Jiang Wu ,  Chien-Chang Huang ,  Bo-Ching Jiang ,  Yu-Wei Ting

发明人： Tie-Jiang Wu ,  Chien-Chang Huang ,  Bo-Ching Jiang ,  Yu-Wei Ting

IPC分类号： H01L21/8242 ,  H01L23/544 ,  H01L27/02 ,  H01L21/66

CPC分类号： H01L27/10861 ,  G11C11/401 ,  G11C2029/5002 ,  H01L22/34 ,  H01L27/0207 ,  H01L27/10867 ,  H01L27/1087

摘要： A test device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices. A quadrilateral active area is disposed in the scribe line region, with four equilaterals and four vertex angles. Parallel first and second deep trench capacitors are disposed in the quadrilateral active area. The first deep trench capacitor has a first surface aligned with a second surface of the second deep trench capacitor. The first and second vertex angles of the four vertex angles have a diagonal line essentially perpendicular to the first and second surfaces. The first and second vertex angles are a predetermined distance from the first surface and the second surface respectively.

摘要翻译： 用于检测DRAM器件中深沟槽电容器和有源区域的对准的测试装置和方法。 四边形有源区域设置在划线区域，具有四个平衡和四个顶角。 平行的第一和第二深沟槽电容器设置在四边形有源区域中。 第一深沟槽电容器具有与第二深沟槽电容器的第二表面对准的第一表面。 四个顶角的第一和第二顶角具有基本上垂直于第一和第二表面的对角线。 第一和第二顶角分别与第一表面和第二表面预定的距离。