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    SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE
    61.
    发明申请
    SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE 有权
    基板支撑与对称馈电结构

    公开(公告)号：US20120097332A1

    公开(公告)日：2012-04-26

    申请号：US12910547

    申请日：2010-10-22

    Applicant: XING LIN ,  DOUGLAS A. BUCHBERGER, JR. ,  XIAOPING ZHOU ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

    Inventor： XING LIN ,  DOUGLAS A. BUCHBERGER, JR. ,  XIAOPING ZHOU ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

    IPC: C23F1/08

    CPC classification number: H01L21/67069 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/6831

    Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

    Abstract translation: 本文公开了用于处理衬底的装置。 在一些实施例中，衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件，衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极，用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体，其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极，其中内部导体是管状的，并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸 的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层，所述外部电介质层将所述外部导体与所述内部导体电隔离。 外部导体可以耦合到电气接地。

    Capacitively coupled plasma reactor having very agile wafer temperature control
    62.
    发明授权
    Capacitively coupled plasma reactor having very agile wafer temperature control 有权
    具有非常敏捷的晶片温度控制的电容耦合等离子体反应器

    公开(公告)号：US08157951B2

    公开(公告)日：2012-04-17

    申请号：US11408333

    申请日：2006-04-21

    Applicant: Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    Inventor： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC: H01L21/306 ,  C23C16/52 ,  C23C16/46

    CPC classification number: H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

    Abstract translation: 用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到 所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

    Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
    63.
    发明授权
    Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
    在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法

    公开(公告)号：US08034180B2

    公开(公告)日：2011-10-11

    申请号：US11410782

    申请日：2006-04-24

    Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: H01L21/67109

    Abstract: A method of controlling the temperature of a workpiece on a workpiece support in a plasma reactor includes placing coolant in a flow channel thermally coupled to the workpiece support, supporting a thermally conductive gas between the workpiece and the workpiece support to establish a backside gas pressure, providing sensors to measure the temperature of the workpiece support and the workpiece, and determining whether the rate of change in workpiece temperature is less or more than a rate limited by a thermal mass of the workpiece support. If the rate is less or equal, the thermal conditions of the coolant in the flow channel are changed to reduce a difference between the measured workpiece support temperature and a target workpiece support temperature. If the rate is more, the pressure of the thermally conductive gas is changed to reduce a difference between the measured workpiece temperature and a target workpiece temperature.

    Abstract translation: 控制等离子体反应器中的工件支撑件上的工件的温度的方法包括将冷却剂放置在与工件支撑件热耦合的流动通道中，在工件和工件支撑件之间支撑导热气体以建立背侧气体压力， 提供传感器来测量工件支撑件和工件的温度，并且确定工件温度的变化率是否小于或大于由工件支撑件的热质量限制的速率。 如果速率小于或等于，则改变流道中的冷却剂的热条件以减少测量的工件支撑温度和目标工件支撑温度之间的差。 如果速率更高，则改变导热气体的压力，以减小所测量的工件温度和目标工件温度之间的差异。

    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE
    64.
    发明申请
    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE 有权
    用于控制基板温度均匀性的装置

    公开(公告)号：US20110180243A1

    公开(公告)日：2011-07-28

    申请号：US12886255

    申请日：2010-09-20

    Applicant: KALLOL BERA ,  XIAOPING ZHOU ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN ,  HAMID TAVASSOLI ,  SURAJIT KUMAR ,  SHAHID RAUF

    Inventor： KALLOL BERA ,  XIAOPING ZHOU ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN ,  HAMID TAVASSOLI ,  SURAJIT KUMAR ,  SHAHID RAUF

    IPC: F28F3/12

    CPC classification number: F28F3/12 ,  F28F2013/001

    Abstract: Apparatus for controlling thermal uniformity of a substrate is provided herein. In some embodiments, the thermal uniformity of the substrate may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate may include a substrate support having a support surface to support a substrate thereon; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the substrate support to flow a heat transfer fluid beneath the support surface.

    Abstract translation: 本文提供了用于控制基板的热均匀性的装置。 在一些实施例中，可以将衬底的热均匀性控制得更均匀。 在一些实施例中，可以将所述衬底的热均匀性控制为以所需图案不均匀。 在一些实施例中，用于控制衬底的热均匀性的装置可以包括具有用于在其上支撑衬底的支撑表面的衬底支撑件; 以及多个流动路径，其具有设置在所述基板支撑件内的基本相当的流体电导，以使传热流体在所述支撑表面下方流动。

    METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR USING FEED FORWARD THERMAL CONTROL
    66.
    发明申请
    METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR USING FEED FORWARD THERMAL CONTROL 有权
    使用前馈热控制处理等离子体反应器中的工件的方法

    公开(公告)号：US20110065279A1

    公开(公告)日：2011-03-17

    申请号：US12949028

    申请日：2010-11-18

    Applicant: Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    Inventor： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC: H01L21/465

    CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

    Abstract: A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RE heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.

    Abstract translation: 一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过包括静电卡盘内的蒸发器的制冷回路，同时对工件 - 卡盘 与导热气体接触，基于条件，感测室内的条件，包括工件附近的温度，并模拟卡盘热模型中通过静电卡盘的热流。 该方法还包括获得在工件上的RE热负荷的下一个调度的变化，并且使用该模型来估计蒸发器中的冷却剂的热条件的变化，该变化将通过补偿下一个预定的RF热变化来保持温度几乎恒定 在通过静电卡盘的热传播延迟的头开始的下一次预定改变之前，在蒸发器中的冷却剂的热条件的变化。

    CAPACITIVLEY COUPLED PLASMA REACTOR HAVING A COOLED/HEATED WAFER SUPPORT WITH UNIFORM TEMPERATURE DISTRIBUTION
    69.
    发明申请
    CAPACITIVLEY COUPLED PLASMA REACTOR HAVING A COOLED/HEATED WAFER SUPPORT WITH UNIFORM TEMPERATURE DISTRIBUTION 审中-公开
    具有均匀温度分布的冷却/加热过滤器支持的电容耦合等离子体反应器

    公开(公告)号：US20100319852A1

    公开(公告)日：2010-12-23

    申请号：US12855675

    申请日：2010-08-12

    Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC: C23F1/08 ,  H01L21/306

    CPC classification number: H01L21/67109 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831

    Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

    Abstract translation: 用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路， 制冷剂入口和制冷剂出口。 优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。 优选地，蒸发器内的制冷剂在气相和液相之间分配。 结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。 该特征改善了静电卡盘的直径上的温度分布的均匀性。

    CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL
    70.
    发明申请
    CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL 有权
    具有非常平滑的温度控制的电容耦合等离子体反应器

    公开(公告)号：US20100303680A1

    公开(公告)日：2010-12-02

    申请号：US12855678

    申请日：2010-08-12

    Applicant: Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    Inventor： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC: B01J19/08

    CPC classification number: H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

    Abstract translation: 用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到 所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

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