Abstract:
An apparatus, such as a switch module, is provided. The apparatus can include an electromechanical switch structure configured to move between an open configuration and a fully-closed configuration (associated with a minimum characteristic resistance) over a characteristic time. A commutation circuit can be connected in parallel with the electromechanical switch structure, and can include a balanced diode bridge configured to suppress arc formation between contacts of the electromechanical switch structure and a pulse circuit including a pulse capacitor configured to form a pulse signal (in connection with a switching event of the electromechanical switch structure) for causing flow of a pulse current through the balanced diode bridge. The electromechanical switch structure and the balanced diode bridge can be disposed such that a total inductance associated with the commutation circuit is less than or equal to a product of the characteristic time and the minimum characteristic resistance.
Abstract:
A device for controlling the flow of electric current is provided. The device comprises a first conductor as thin film form; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K.
Abstract:
An apparatus, such as a switch module, is provided. The apparatus can include an electromechanical switch structure configured to move between an open configuration and a fully-closed configuration (associated with a minimum characteristic resistance) over a characteristic time. A commutation circuit can be connected in parallel with the electromechanical switch structure, and can include a balanced diode bridge configured to suppress arc formation between contacts of the electromechanical switch structure and a pulse circuit including a pulse capacitor configured to form a pulse signal (in connection with a switching event of the electromechanical switch structure) for causing flow of a pulse current through the balanced diode bridge. The electromechanical switch structure and the balanced diode bridge can be disposed such that a total inductance associated with the commutation circuit is less than or equal to a product of the characteristic time and the minimum characteristic resistance.
Abstract:
Electrical distribution systems implementing micro-electromechanical system based switching devices. Exemplary embodiments include a method in an electrical distribution system, the method including determining if there is a fault condition in a branch of the electrical distribution system, the branch having a plurality of micro electromechanical system (MEMS) switches, re-closing a MEMS switch of the plurality of MEMS switches, which is furthest upstream in the branch and determining if the fault condition is still present. Exemplary embodiments include an electrical distribution system, including an input port for receiving a source of power, a main distribution bus electrically coupled to the input port, a service disconnect MEMS switch disposed between and coupled to the input port and the main distribution bus and a plurality of electrical distribution branches electrically coupled to the main distribution bus.
Abstract:
A device for controlling the flow of electric current is provided. The device comprises a first conductor as thin film form; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K.
Abstract:
A method of manufacturing an ignition device is provided. The method includes patterning a plurality of resistors on a membrane to form heating elements and thermally isolating the heating elements from an external environment via a cavity disposed adjacent to the heating elements.
Abstract:
A micro electro-mechanical system switch is presented. The switch includes a base substrate having a support surface. An actuating surface having a notch and an electrical contact surface having an extension is provided. The extension is disposed within the notch. A beam is attached to the base substrate. The beam includes an actuatable free end that is configured to flex upon actuation and to make contact with at least a portion of the extension and carry current therethrough.
Abstract:
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
Abstract:
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
Abstract:
A device includes at least one semiconductor switching circuit connected to a power source and a load and at least one breaker switch integrated with the at least one semiconductor switching circuit. The breaker circuit may be connected in series with the at least one semiconductor switching circuit and the at least one breaker switch is configured to create an open circuit in less than about twenty microseconds of receipt of a predetermined threshold of semiconductor switch current to thereby prevent damage to the at least one semiconductor switching circuit or housing. A method of preventing damage to a semiconductor switching circuit or device is also presented.