Switch structure and associated circuit
    61.
    发明授权
    Switch structure and associated circuit 有权
    开关结构及相关电路

    公开(公告)号:US08054589B2

    公开(公告)日:2011-11-08

    申请号:US12639060

    申请日:2009-12-16

    Abstract: An apparatus, such as a switch module, is provided. The apparatus can include an electromechanical switch structure configured to move between an open configuration and a fully-closed configuration (associated with a minimum characteristic resistance) over a characteristic time. A commutation circuit can be connected in parallel with the electromechanical switch structure, and can include a balanced diode bridge configured to suppress arc formation between contacts of the electromechanical switch structure and a pulse circuit including a pulse capacitor configured to form a pulse signal (in connection with a switching event of the electromechanical switch structure) for causing flow of a pulse current through the balanced diode bridge. The electromechanical switch structure and the balanced diode bridge can be disposed such that a total inductance associated with the commutation circuit is less than or equal to a product of the characteristic time and the minimum characteristic resistance.

    Abstract translation: 提供了诸如开关模块的装置。 该装置可以包括被配置为在特征时间上在打开配置和完全关闭配置(与最小特征电阻相关联)之间移动的机电开关结构。 换向电路可以与机电开关结构并联连接,并且可以包括平衡二极管桥,该平衡二极管桥被配置为抑制机电开关结构的触点之间的电弧形成,并且包括脉冲电路,脉冲电路包括构成为形成脉冲信号的脉冲电容 具有机电开关结构的切换事件),用于使脉冲电流流过平衡二极管桥。 机电开关结构和平衡二极管电桥可以被布置成使得与换向电路相关联的总电感小于或等于特征时间和最小特性电阻的乘积。

    SWITCH STRUCTURE AND ASSOCIATED CIRCUIT
    63.
    发明申请
    SWITCH STRUCTURE AND ASSOCIATED CIRCUIT 有权
    开关结构及相关电路

    公开(公告)号:US20110140546A1

    公开(公告)日:2011-06-16

    申请号:US12639060

    申请日:2009-12-16

    Abstract: An apparatus, such as a switch module, is provided. The apparatus can include an electromechanical switch structure configured to move between an open configuration and a fully-closed configuration (associated with a minimum characteristic resistance) over a characteristic time. A commutation circuit can be connected in parallel with the electromechanical switch structure, and can include a balanced diode bridge configured to suppress arc formation between contacts of the electromechanical switch structure and a pulse circuit including a pulse capacitor configured to form a pulse signal (in connection with a switching event of the electromechanical switch structure) for causing flow of a pulse current through the balanced diode bridge. The electromechanical switch structure and the balanced diode bridge can be disposed such that a total inductance associated with the commutation circuit is less than or equal to a product of the characteristic time and the minimum characteristic resistance.

    Abstract translation: 提供了诸如开关模块的装置。 该装置可以包括被配置为在特征时间上在打开配置和完全关闭配置(与最小特征电阻相关联)之间移动的机电开关结构。 换向电路可以与机电开关结构并联连接,并且可以包括平衡二极管桥,该平衡二极管桥被配置为抑制机电开关结构的触点之间的电弧形成,并且包括脉冲电路,脉冲电路包括构成为形成脉冲信号的脉冲电容 具有机电开关结构的切换事件),用于使脉冲电流流过平衡二极管桥。 机电开关结构和平衡二极管电桥可以被布置成使得与换向电路相关联的总电感小于或等于特征时间和最小特性电阻的乘积。

    Microelectromechanical system pressure sensor and method for making and using
    69.
    发明授权
    Microelectromechanical system pressure sensor and method for making and using 失效
    微机电系统压力传感器及其制作与使用方法

    公开(公告)号:US07560788B2

    公开(公告)日:2009-07-14

    申请号:US10945399

    申请日:2004-09-20

    CPC classification number: G01L9/0073 G01L1/148

    Abstract: According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

    Abstract translation: 根据一些实施例,在第一晶片上形成导电层。 在第二晶片上形成绝缘层。 绝缘层包括空腔,并且导电区域可以形成在靠近空腔的第二晶片中。 与第一晶片相对的导电层的一侧被结合到与第二晶片相对的绝缘层的一侧。 然后去除至少一些第一晶片,而不去除至少一些导电层,以形成基本上平行于第二晶片的导电隔膜。 以这种方式,可以测量隔膜和导电区域之间的电容量,以确定施加到隔膜的压力的量。

    METHOD AND DEVICE FOR PREVENTING DAMAGE TO A SEMICONDUCTOR SWITCH CIRCUIT DURING A FAILURE
    70.
    发明申请
    METHOD AND DEVICE FOR PREVENTING DAMAGE TO A SEMICONDUCTOR SWITCH CIRCUIT DURING A FAILURE 审中-公开
    用于在故障期间防止对半导体开关电路的损坏的方法和装置

    公开(公告)号:US20090161277A1

    公开(公告)日:2009-06-25

    申请号:US11962830

    申请日:2007-12-21

    Abstract: A device includes at least one semiconductor switching circuit connected to a power source and a load and at least one breaker switch integrated with the at least one semiconductor switching circuit. The breaker circuit may be connected in series with the at least one semiconductor switching circuit and the at least one breaker switch is configured to create an open circuit in less than about twenty microseconds of receipt of a predetermined threshold of semiconductor switch current to thereby prevent damage to the at least one semiconductor switching circuit or housing. A method of preventing damage to a semiconductor switching circuit or device is also presented.

    Abstract translation: 一种器件包括连接到电源和负载的至少一个半导体开关电路和与所述至少一个半导体开关电路集成的至少一个断路器开关。 断路器电路可以与所述至少一个半导体开关电路串联连接,并且所述至少一个断路器开关被配置为在接收半导体开关电流的预定阈值的小于约二十微秒内产生开路,从而防止损坏 至少一个半导体开关电路或外壳。 还提出了防止对半导体开关电路或器件的损坏的方法。

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