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    Phenylenediamine derivative-type additive useful for a chemically amplified photoresist
    61.
    发明授权
    Phenylenediamine derivative-type additive useful for a chemically amplified photoresist 失效
    可用于化学放大光致抗蚀剂的苯二胺衍生物类型添加剂

    公开(公告)号：US06399272B1

    公开(公告)日：2002-06-04

    申请号：US09595434

    申请日：2000-06-15

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： B03F7004

    CPC分类号： G03F7/0392 ,  G03F7/0045

    摘要： The present invention relates to a phenylenediamine derivative of the formula: where B and B′ are defined herein. The phenylenediamine derivatives of the present invention are useful as an additive in a photoresist composition. For example, it has been found that photoresist. compositions comprising the phenylenediamine derivative of the present invention have a high energy latitude margin, an improved contrast value, and enhanced post exposure delay stability.

    摘要翻译： 本发明涉及下式的苯二胺衍生物：其中B和B'在本文中定义。 本发明的苯二胺衍生物可用作光致抗蚀剂组合物中的添加剂。 例如，已经发现光致抗蚀剂。 包含本发明的苯二胺衍生物的组合物具有高能量纬度裕度，改善的对比度值和增强的后曝光延迟稳定性。

    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    62.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 失效
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06368770B1

    公开(公告)日：2002-04-09

    申请号：US09621125

    申请日：2000-07-21

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  Y10S430/114 ,  Y10S430/122

    摘要： The present invention provides a novel photoresist monomer, photoresist copolymer derived from the same, and the photoresist composition comprising the same. In particular, the present invention provides a photoresist monomer of the formula: wherein, A, A′, X, m and n are those defined herein. The photoresist composition of the present invention has an excellent etching and heat resistance, and enhances the resolution and profile of the photoresist film.

    摘要翻译： 本发明提供了一种新型光致抗蚀剂单体，衍生自其的光致抗蚀剂共聚物和包含该光致抗蚀剂的光致抗蚀剂组合物。 特别地，本发明提供下式的光致抗蚀剂单体：其中A，A'，X，m和n是本文定义的那些。 本发明的光致抗蚀剂组合物具有优异的蚀刻和耐热性，并且提高了光致抗蚀剂膜的分辨率和轮廓。

    Organic anti-reflective coating material and its preparation
    63.
    发明授权
    Organic anti-reflective coating material and its preparation 失效
    有机防反射涂料及其制备方法

    公开(公告)号：US06368768B1

    公开(公告)日：2002-04-09

    申请号：US09501049

    申请日：2000-02-09

    申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

    发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C08F20/18 ,  C07C69/54 ,  C07C2603/24

    摘要： Polymers are provided having the following formula I, II or III: Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers. The ARC also eliminates the standing waves and reflective notching due to the optical properties of lower layers on the wafer, and due to the changes in the thickness of the photosensitive film applied thereon. This results in the formation of stable ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAM semiconductor devices and a great improvement in the production yield.

    摘要翻译： 提供具有下列式I，II或III的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光的用于亚微光刻工艺的抗反射涂层（ARC）材料。 聚合物含有发色团取代基，其在用于这种亚微光刻工艺的波长下表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。 由于晶片上的下层的光学特性，并且由于其上施加的感光膜的厚度的变化，ARC还消除了驻波和反射性凹陷。 这导致形成适合64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并且生产产量大大提高。

    Organic anti-reflective coating material and its preparation
    66.
    发明授权
    Organic anti-reflective coating material and its preparation 失效
    有机防反射涂料及其制备方法

    公开(公告)号：US06309790B1

    公开(公告)日：2001-10-30

    申请号：US09499873

    申请日：2000-02-07

    申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

    发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

    IPC分类号： G03F7004

    CPC分类号： H01L21/02118 ,  C07C67/14 ,  C07C69/54 ,  C07C2603/24 ,  C08F220/18 ,  C08F220/28 ,  C08F220/32 ,  C09D133/068 ,  C09D133/14 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/312 ,  Y10S430/111

    摘要： Polymers are provided having the following formulas I and II: Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers.

    摘要翻译： 提供具有以下分子式I和II的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光器的用于亚微光刻工艺的抗反射涂层（ARC）材料。 聚合物含有发色团取代基，其在用于这种亚微光刻工艺的波长下表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。

    Copolymer resin, preparation thereof, and photoresist using the same
    67.
    发明授权
    Copolymer resin, preparation thereof, and photoresist using the same 有权
    共聚物树脂及其制备方法和使用其的光致抗蚀剂

    公开(公告)号：US06248847B1

    公开(公告)日：2001-06-19

    申请号：US09208650

    申请日：1998-12-10

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F2606

    CPC分类号： C07D309/12 ,  C07C69/013 ,  C07C69/54 ,  C07C69/757 ,  G03F7/0045

    摘要： The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbonyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbonyl group, and shows excellent resolution of 0.15 &mgr;m in practical experiment of patterning.

    摘要翻译： 本发明涉及用于超短波光源如KrF或ArF的共聚物树脂，其制备方法和包含相同树脂的光致抗蚀剂。 由于将（甲基）丙烯酸去羰基酯单元引入到光致抗蚀剂共聚物的结构中，本发明的共聚物树脂可以容易地通过常规的自由基聚合制备。 该树脂在193nm波长处具有高透明度，由于在诺乃诺基中具有亲水性官能团，提供了更高的抗蚀刻性和增强的粘合强度，并且在实际的图案化实验中显示出优异的0.15μm分辨率。

    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    68.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 有权
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06235447B1

    公开(公告)日：2001-05-22

    申请号：US09418724

    申请日：1999-10-15

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C08F32/08 ,  C07C62/34 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below: wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R′ and R″ individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.

    摘要翻译： 本发明涉及可用于形成光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物的新单体，其适用于采用远紫外光源的光刻法，其共聚物。 本发明优选的单体由下面的化学式1表示：其中，X 1和X 2分别表示CH 2，CH 2 CH 2，氧或硫; Y表示CH2或氧; R 1表示H或CH 3，R'和R“分别表示取代或未取代的（C 0 -C 3）烷基; i表示0〜3的整数。