公开(公告)号：US20190071775A1

公开(公告)日：2019-03-07

申请号：US16178199

申请日：2018-11-01

Applicant: ASM IP Holding B.V.

Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/18

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

公开(公告)号：US20180087154A1

公开(公告)日：2018-03-29

申请号：US15820188

申请日：2017-11-21

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L45/00 ,  C23C16/18 ,  H01L21/02 ,  C23C16/30 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US09909211B2

公开(公告)日：2018-03-06

申请号：US15186249

申请日：2016-06-17

Applicant: ASM IP Holding B.V.

Inventor： Miia Mäntymäki ,  Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/30 ,  C23C16/45534

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

公开(公告)号：US20160369397A1

公开(公告)日：2016-12-22

申请号：US15186249

申请日：2016-06-17

Applicant: ASM IP Holding B.V.

Inventor： Miia Mäntymäki ,  Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/30 ,  C23C16/45534

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract translation: 一种用于在反应室中的基底上形成薄膜的气相沉积工艺，其中所述方法包括使基底与氟化物前体接触。 该方法导致形成氟化锂薄膜。

公开(公告)号：US20230307247A1

公开(公告)日：2023-09-28

申请号：US18319330

申请日：2023-05-17

Applicant: ASM IP HOLDING B.V.

Inventor： Mikko Ritala ,  Chao Zhang ,  Markku Leskelä

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/033 ,  H01L21/3105

CPC classification number: H01L21/31138 ,  H01L21/30604 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/31127

Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.

公开(公告)号：US20220411931A1

公开(公告)日：2022-12-29

申请号：US17866706

申请日：2022-07-18

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/14

Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

公开(公告)号：US20220389583A1

公开(公告)日：2022-12-08

申请号：US17891851

申请日：2022-08-19

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20220367195A1

公开(公告)日：2022-11-17

申请号：US17870931

申请日：2022-07-22

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US11410851B2

公开(公告)日：2022-08-09

申请号：US16936950

申请日：2020-07-23

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US11244825B2

公开(公告)日：2022-02-08

申请号：US17028066

申请日：2020-09-22

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.